• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.157-164
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• 1998

Effects of alloying elements on the pitting behavior of Ti-Al intermetalic compounds in the electrolytic soution containing Cl- were investigated through electrochemical tets and corrosion morphologies. Corrosion potential increased in the case of Cr addition to Ti-48%Al, whereas it decreased in the case of Si and B addition. The simultaneous addition of Cr and Si increased passive current density and decrosion corrosion potential. The passive current density of N addtion was higher than that of B addition in H2SO4 solution. With the addition of alloying elements, The pitting resistance decreased in order of TiAl>TiAlSi>TiAlN>TiAlB>TiAlCr and whin siumultaneous addition, it decreased in order of TiAlCrSi>TiAlCrBN>TiAlCrrN. The surface merohology after pitting test showed that the TiAl coataining Si had for fewer pits than that containing Cr and N simultaneously.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.17-17
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• 2000

• Proceedings of the KWS Conference
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• 1999.05a
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• pp.96-97
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• 1999

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.9
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• pp.82-88
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• 2001

In order to fulfil the requirements of the various performance profiles of ceramic cutting tools, six different SiC-based ceramics have been fabricated by hot-pressing (SiC--${Si}_3 {N}_4$composites) or by hot-pressing and subsequent annealing (monolithic SiC and SiC-TiC composites). Correlation between the annealing time and the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The grain size of both ${Si}_3 {N}_4$and SiC in SiC-${Si}_3 {N}_4$composites increased with the annealing time. Monolithic SiC has the highest hardness, SiC-TiC composite the highest toughness, and the SiC-${Si}_3 {N}_4$composite the highest strength among the ceramics investigated. The hardness of SiC-${Si}_3 {N}_4$composites was relatively independent of the grain size, but dependent on the sintered density. The cutting performance of the newly developed SiC-based ceramic cutting tools will be described in Part 2 of this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.209-209
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• 2003

기계가공용으로 개발된 3성분계 Ti-Si-N 코팅막은 약 40㎬이상의 초고경도이며, 그 미세구조는 나노입자의 TiN결정과 비정질 Si$_3$N$_4$로 이루어져 있다. Ti-Si-N 코팅의 경도는 극소량 Si를 첨가함에 따라 급격히 증가하였으며, 7.7at%에서 약 45㎬이었다. 그 이상에서는 감소하였다. 본 연구는 Ti-Si-N 코팅에서 규소첨가에 따른 박막에 형성하는 질화규소 또는 규소의 특성을 조사하기 위하여 질화규소 박막을 제조하여 그 특성 및 기계적 성질을 조사하였다. 스퍼터링 방법으로 제조한 질화규소 박막의 표면 및 내부구조를 광학현미경, 주사전자현미경, 투과전자현미경 그리고 AFM으로, 정성 및 정량을 EPMA와 EDS로, 결정성을 박막 엑스선회 절분석기로, 화학 결합구조을 XPS으로 분석하였다. 그리고 나노인덴터를 이용하여 박막의 경도와 탄성계수를 조사하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.