• 제목/요약/키워드: $Si_3 N_4 O_3$

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$Si_3N_4$계 세라믹 절삭공구의 절삭특성 평가 (Cutting Characteristic of $Si_3N_4$ based Ceramic Inserts)

  • 안영진;고영목;권원태;김영욱
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2002년도 춘계학술대회 논문집
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    • pp.655-659
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    • 2002
  • This study is performed to develop the Si$_3$N$_4$ based ceramic inserts. Si$_3$N$_4$with addition of SiC and A1$_2$O$_3$ is investigated to determine the possibility to be a new tool. The tool life of Si$_3$N$_4$ insert with more than 20wt% SiC is shorter than commercial Si$_3$N$_4$ insert during machining both heat treated SCM440 and gray cast iron. Even though SiC has higher hardness than Si$_3$N$_4$, its chemical affinity to the iron on high temperature may causes deteriorat ion of tool life. To the contrary, Si$_3$N$_4$insert with A1$_2$O$_3$ shows increase of tool life up to 300% compared to the commercial Si$_3$N$_4$insert. It may attribute to the high temperature stability of A1$_2$O$_3$. Further study will be focused on the optimization of ceramic inserts with the composition of Si$_3$N$_4$and A1$_2$O$_3$.

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Bending Strength of Crack Healed $Si_3N_4/SiC$ Composite Ceramics by $SiO_2$ Colloidal

  • 박승원;김미경;안석환;남기우
    • 한국해양공학회:학술대회논문집
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    • 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
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    • pp.166-168
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    • 2006
  • $Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.

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Si3N4-Y2O3-Al2O3계의 입계상 결정화에 관한 연구 (A Study on the Crystallization of Grain-Boundary Phases in Si3N4-Y2O3-Al2O3 System)

  • 박정현;황종희
    • 한국세라믹학회지
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    • 제26권1호
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    • pp.13-20
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    • 1989
  • After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

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$Si_3N_4-Al_2O_3-SiO_2$계의 1,$700^{\circ}C$에서 생성하는 화합물의 상관계 및 미구조 (Phase Relations and Microstructure of Comounds in the $Si_3N_4-Al_2O_3-SiO_2$ system at $1700^{\cire}C$)

  • 이의종;김환
    • 한국세라믹학회지
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    • 제16권4호
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    • pp.206-212
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    • 1979
  • The phase relations and microstructure appeared at 1700℃ in a system of Si3N4-Al2O3-SiO2 were studied. The samples were pressurelessly sintered at 1700℃ for 1hr and reheated at 1600℃ for 1hr under nitrogen atmosphere. The compounds formed were identified by X-ray diffraction method and the microstrues were observed by SEM. The stable phases appeared in this system were X-phase, Si2ON2, β'-Si3N4 and Mullite. From the results of those experiments, it was concluded that the X-phase has very close composition to that proposed by G, K. Layden, Si3Al6O12N2. SEM photographs showed that Si2ON2 was a plate phase and X-phase was a rectagular plate phase.

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$Y_{0.1}$(Si, Al)$_12$(N, O)$_16$의 조성을 갖는 부분안정화 $\alpha$-Sialon 열간가압소결체의 고온강도 (High-Temperature Strength of the Hot-Pressed Partially Stabilized $\alpha$-Sialon Ceramics Having the Composition of Y0.1(Si, Al)12(N, O)16)

  • 조덕호;이형복
    • 한국세라믹학회지
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    • 제29권5호
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    • pp.410-418
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    • 1992
  • Si3N4, AlN and Y2O3 powder mixtures of the Y0.1(Si, Al)12(N, O)16 composition were hot-pressed at 1900℃ for 0 to 60 min under 30 MPa in order to fabricate the partially-stabilized α-Sialon ceramics (X=0.1). Room and high temperature flexural strengths of the specimens were compared with those of Si3N4-5 wt%Y2O3, Si3N4-5 wt%Y2O3-2 wt%Al2O3, and β-Sialon (Z=0.5) ceramics. The flexural strength of the α-Sialon ceramics which was hot-pressed for 15 min showed the highest value of 820 MPa at 1400℃ that is relatively higher temperature. It is guessed that a little amount of glassy phase existed in grain boundary because Y2O3 and AlN components were incoperated in Si3N4 grains, or transient liquid phase sintering, and microstructure with the smaller grain size and the interlocked grains of α'-and β-Si3N4 was obtained by the hot-pressing at high temperature of 1900℃ for the short time (15 min).

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비휘발성 메모리를 위한 $SiO_2/Si_3N_4$ 적층 구조를 갖는 터널링 절연막의 열처리 효과 (Annealing Effects of Tunneling Dielectrics Stacked $SiO_2/Si_3N_4$ Layers for Non-volatile Memory)

  • 김민수;정명호;김관수;박군호;정종완;정홍배;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.128-129
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    • 2008
  • The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

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SiO2 콜로이달에 의한 Si3N4 복합 세라믹스의 상온굽힘강도 및 균열치유 현상 (Room Temperature Strength and Crack Healing Morphology of Si3N4 Composite Ceramics with SiO2 Colloidal)

  • 남기우;김종순;이희방
    • 대한기계학회논문집A
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    • 제33권7호
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    • pp.652-657
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    • 2009
  • Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

SiO$_2$/Si$_3$N$_4$ 이중 박막의 C-V 특성 (Capacitance-Voltage Characteristics in the Double Layers of SiO$_2$/Si$_3$N$_4$)

  • Hong, Nung-Pyo;Hong, Jin-Woong
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권10호
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    • pp.464-468
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    • 2003
  • The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

SiO2/Si3N4 터널 절연악의 적층구조에 따른 비휘발성 메모리 소자의 특성 고찰 (Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide)

  • 조원주
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.17-21
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    • 2009
  • The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

Na-Ca-Si-O-N계 Oxynitride Glass의 제조 및 특성 (Preparation and Properties of Na-Ca-Si-O-N System Oxynitride Glasses)

  • 이종호;이용근;최세영
    • 한국세라믹학회지
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    • 제30권2호
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    • pp.85-92
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    • 1993
  • Oxynitride glasses in Na-Ca-Si-O-N system were prepared by melting at 135$0^{\circ}C$ for 2 hours in N2 gas. The effects of Si/Na mole ratio and the various Si3N4 contents were investigated. Stable oxynitride glasses can be obtained up to 9wt.% Si3N4 content in case the Si/Na mole ratio was 2.12 and 1.62, but $\beta$-Si3N4 was precipitated at 9wt.% Si3N4 content in case the Si/Na mole rtio was 1.12. Density (p), chemical durability, hardness (Hv), and fracture toughness (KIC) increased with increasing Si3N4 content. In cae the Si/Na mole ratio was 1.12, the increment of properties was remarkable but hardness and fracture toughness did not increase no longer owing to precipitation of $\beta$-Si3N4.

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