• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1222-1225
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• 1997

A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.193-193
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• 2010

서로 다른 유전 물질을 이용하여 다층구조의 터널장벽을 이용하여 비휘발성 메모리 소자의 동작 특성 및 전하보존 특성을 향상시킬 수 있음이 보고되었다.[1-3] 본 연구에서는 $SiO_2/Si_3N_4/SiO_2$구조의 다층 구조의 터널 장벽을 이용하여 $WSi_2$ 나노 입자 비휘발성 메모리 소자를 제작하였다. P-형 Si 기판에 100 nm 두께의 Poly-Si 박막을 증착시켜 소스, 드레인 및 게이트 영역을 포토 리소그래피를 이용하여 형성하였다. $SiO_2/Si_3N_4/SiO_2$(ONO) 터널장벽은 CVD (chemical vapor deposition) 장치로 각각 2 nm, 2 nm 와 3 nm 두께로 형성하였으며, 그 위에 $WSi_2$ 박막을 3~4 nm 마그내트론 스퍼터링 방법으로 증착하였다. ONO 터널 장벽구조 위에 $WSi_2$나노입자를 형성시키기 위해, $N_2$분위기에서 급속열처리 방법을 이용하여 $900^{\circ}C$에서 1분간 열처리를 하였다. 마지막으로 20 nm 두께의 컨트롤 절연막을 초고진공 스퍼터를 이용하여 증착하고, Al 박막을 200 nm 두께로 증착하였다. 여기서. 제작된 메모리 소자의 게이트 길이와 선폭은 모두 $10\;{\mu}m$ 이다. 비휘발성 메모리 소자의 전기적 특성은 HP 4156A 반도체 파라미터 장비, Agilent 81104 A 80MHz 펄스/패턴 발생기를 이용하였다. 또한 전하 저장 터널링 메커니즘과, 전하누설의 원인을 분석하고 소자의 열적 안정성을 확인하기 위하여 $25^{\circ}C$ 에서 $125^{\circ}C$ 로 온도를 변화시켜 외부로 방출되는 전하의 활성화 에너지를 확인하여 누설근원을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.1
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• pp.49-58
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• 1995

출발물질은 cordierite 유리와 borosilicate/Si3N4 복합분말을 사용하였다. Cordierite 유리조성은 무게비로 17.8MgO-23.1Al2O3-48.1ASiO2-5.0ZnO-1.0B2O3를 선택하였다. Borosilicate/Si3N4복합분말은 sol-gel법으로 a-si3N4 core 분말에 borosilicate 겔을 코팅하여 얻었다. 복합분말과 cordierite 유리 분말을 부피비로 0/100, 12.5/87.5 및 25/75의 조성으로 혼합하여 tape casting 에 의해 green sheet를 제작하였다. 이들 sheet들을 800~100$0^{\circ}C$에서 2시간 소성하여 얻은 시편을 SEM, XRD, 밀도, 유전상수 등을 측정하여 저 유전율의 저온 소성 기판재료를 제조하기 위한 조건들을 검토하였다.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.667-674
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• 1991

In this study, Kaolin was carbonized at 1300~175$0^{\circ}C$ and its constituent mineral change was investigated. Carbonized kaolin at 1$650^{\circ}C$ was mixed with metallic silicon, formed and nitrified at 135$0^{\circ}C$ in N2-NH3 atmosphere. Properties of this product such as porosity, bulk density, MOR, nitrization rate and oxidation resistence were measured, and its mineralogical changes were investigated by XRD. The results were as follows; 1) $\beta$-SiC was initially synthesized at 150$0^{\circ}C$, and its amount was continuously increased with reaction temperature to 1$700^{\circ}C$. 2) At 1$600^{\circ}C$, mullite was rapidly decomposed and the amounts of $\beta$-SiC and $\alpha$-Al2O3 were increased simultaneously. 3) By adding alkali to kaolin, the decomposition temperature of mullite was dropped approximately 10$0^{\circ}C$, but the amount of $\alpha$-SiC was increased. 4) The highest values of their nitrization rate and MOR were obtained at the specimen of 35 wt% metallic silicon in nitrization reaction. 5) It seems that increment of $\alpha$-Si3N4 and $\alpha$-Al2O3 phase during nitrization was due to the decomposition of Al4SiC4 existed in carbonized kaolin. 6) Si3N4 bonded SiC-Al2O3 composite were fabricated from kaolin at relatively low temperature (135$0^{\circ}C$).

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.21-25
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• 2000

Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.829-837
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• 1993

Chemically and geometrically homogeneous mixing of Si3N4 powders with sintering additives(YAG, 3Y2O3$.$5Al2O3) was attempted via coprecipitation method. X-ray dot maps for the additive elements(Al and Y) showed that the additives are evenly distributed in the powder mixture prepared by coprecipitation method(CP). TEM observation of the coprecipittion-treated Si3N4 powders revealed that they are covered with extremely fine crystallites of additive. The shift in isoelectric point(IEP) of Si3N4 powders from pH 6.7 to pH 7.9 after coprecipitation mixing gave another evidence for coating of Si3N4 powders with YAG additives. SIMS analysis for composition on the surface and in the matrix of mixed powders showed that the YAG additives are highly enriched on the surface of coprecipitation-treated Si3N4 powders. Especially when a small amount of additive was used, the effect of homogeneous additive distribution on densification was preceptible: After pressureless-sintering of powder compacts containing 5 mol% YAG at 1800$^{\circ}C$ for 0.5h, a sintered density of 96.5% theoretical was obtained from the specimens prepared bycoprecipitation in comparison with 93.8% from the mechanically-mixed one.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.2-24.2
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• 2009

Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$와 $Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$와 $Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1715-1720
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• 2010

In this study, we analyzed the crack-healing characteristics of specimens; different crack lengths and coating methods of $Si_3N_4$ ceramic structures with long cracks were analyzed. Cracks with lengths of about $100-500\;{\mu}m$ were obtained using a Vickers indenter for a load of 24.5-98 N. In the case of a crack obtained by applying a load of 24.5 N, the crack-healed specimen with $SiO_2$ nanocolloid coating exhibited the highest bending strength, which was higher than that of a smooth specimen by 140%, but the bending strength of a crack-healed specimen that had a $SiO_2$ nanocolloid coating and originally had multiple cracks was lower than that of a smooth specimen. However, when compared to the cracked specimens, the bending strength of most specimens with multiple cracks increased slightly. On the basis of these results, the crack-healing characteristics of $Si_3N_4$ ceramic structures with multiple indentations were studied for different coating methods. The most effective coating method for long-crack specimens was hydrostatic pressure coating.