• 한국재료학회지
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• 제30권10호
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Nuclear Engineering and Technology
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• 제39권6호
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• pp.747-752
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• 2007

The Proton Engineering Frontier Project (PEFP) has designed and developed a proton linear accelerator facility operating at 100 MeV - 20 mA. The radiological effects of such a nuclear facility on the environment are important in terms of radiation safety. This study estimated the production rates of radionuclides in the soil around the accelerator facility using MCNPX. The groundwater migration of the radioisotopes was also calculated using the Concentration Model. Several spallation reactions have occurred due to leaked neutrons, leading to the release of various radionuclides into the soil. The total activity of the induced radionuclides is approximately $2.98{\times}10^{-4}Bq/cm^3$ at the point of saturation. $^{45}Ca$ had the highest production rate with a specific activity of $1.78{\times}10^{-4}Bq/cm^3$ over the course of one year. $^3H$ and $^{22}Na$ are usually considered the most important radioisotopes at nuclear facilities. However, only a small amount of tritium was produced around this facility, as the energy of most neutrons is below the threshold of the predominant reactions for producing tritium: $^{16}O(n,\;X)^3H$ and $^{28}Si(n,X)^3H$ (approximately 20 MeV). The dose level of drinking water from $^{22}Na$ was $1.48{\times}10^{-5}$ pCi/ml/yr, which was less than the annual intake limit in the regulations.

• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 한국토양비료학회지
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• 제37권6호
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• pp.378-382
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• 2004

Soil pH is an important indicator for soil reactions and crop growth. pH buffer capacity and lime requirements are necessary to comprehend and manage soils well. The characteristics related with soil pH were analyzed and 5 field trials were conducted to elucidate pH buffer capacity of soil and lime requirements and liming factor for Korean acid soils. Soil minerals were analyzed for the soil of 2 years after treating $CaCO_3$ using X-ray diffraction. The amount of neutralized $H^+$ was regarded as the exchangeable aluminium overcoming ${\Delta}pH$, because pH buffer capacity of soil depended on exchangeable aluminium. Lime requirement was somewhat similar to the KCl exchangeable aluminium and it was also affected by the exchangeable cation by added lime. X-ray diffraction analyses revealed that an aluminium dissociation from Korean acid soils was equilibrated with kaolin minerals and changed into anorthite ($CaAl_2Si_2O_8$) by neutralizing with $CaCO_3$. Neutralizing process was composed of changing process of $Al^{3+}$ into $H^+$ and $Al(OH)_4{^-}$ ionic species and of neutralizing $H^+$ by, the amount of which was lime requirement. The fact that anorthite dissociates an aluminium ion higher than kaolinite does enabled to consider a liming factor (LF) the content of exchangeable cation and ${\Delta}pH$, $LF=1.5+0.2{\times}{\sum} Cations{\times}{\Delta}pH$.

• 대한치과기공학회지
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• 제43권4호
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• pp.145-152
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• 2021

Purpose: This study aimed to produce resin prosthetics using a dental barrel finishing machine. For dental resin grinding, the ingredients of the barrel finishing media were analyzed, and surface residues of the resin were observed. Methods: Two types of barrel finishing media for dental resin grinding were tested. Specimens were made from thermal polymerized, auto polymerized, and photopolymerized resins. Finishing media were analyzed through energy-dispersive X-ray spectroscopy (EDS) component analysis and inductively coupled plasma-optical emission spectrometry (ICP-OES) component analysis. Then, the prepared specimen was barrel finished for 25 minutes using two types of barrel finishing media, and scanning electron microscope was photographed to observe the surface residues. Results: As a result of EDS component analysis, both types of finishing media were analyzed for the components of C, O, Zr and Al elements, and industry media (IM) was further analyzed for the components of Si and Mg elements. In the ICP-OES component analysis, Cd and As, which are harmful elements, were detected in IM, and no harmful elements were detected in manufacturing media (MM). Because of observation of surface residues, no residues were observed in the three types of resin specimens that were barrel finished with two types of finishing media. Conclusion: Surface residue wasn't observed on the specimens polished using two types of finishing media. However, in IM, Cd and As, which are harmful elements, were detected, making it inappropriate for clinical use. In MM, harmful elements were not detected; therefore, clinical use will be possible.

• 대한약침학회지
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• 제25권4호
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• pp.382-389
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• 2022

Objectives: The Korean Industrial Standard (KS) for sterile acupuncture needles was established in 2009 based on research on the quality control of acupuncture needles. We aimed to determine the quality of acupuncture needles available in South Korea in 2021 by examining their surface condition and chemical composition using field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray spectroscopy (EDS). Methods: In South Korea, there are 23 brands of acupuncture needles, and we examined 10-15 needles from each brand, resulting in a total of 285 needles. The microstructures of the needles were assessed by SEM. Using SEM images, we evaluated the acupuncture needle tips for the following defects/aspects: scratches, lumps, detached coating, bent tip, and tip sharpness. EDS was used to determine the chemical composition of the selected acupuncture needles. Results: Overall, 88.4% of 285 needles were found to have at least one type of abnormality. The most frequently observed abnormalities were scratches and dents on the surface (68.1%), followed by detached coating (63.2%), and lumps (61.8%); blunt tips were observed in about 24% of them. Of 252 needles with at least one defect, 86.9% had two or more types of defects. The ratio of the number of needles with any defect to that of needles without any defect varied among brands, ranging from 50% to 100%. Regarding foreign materials, higher proportions of Si and O were observed on the needles, indicating incomplete or detached silicone coating. Conclusion: The quality of acupuncture needles varied among brands, suggesting that further improvements can be made through various inspection methods.

• 한국결정성장학회지
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• 제29권6호
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• pp.317-328
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• 2019

본 연구에서는 도자기 제조용 원료(소지)에 사용되는 점토 광물의 물성 및 이로부터 제조된 소지의 품질을 조사하였다. 국내시장에 유통되고 있는 점토광물 중 중국에서 수입된 점토 (블랙점토, 홍점토, 백점토)와 충남 천안, 경남 산청에서 생산된 천안점토, 오부점토를 선택하여 비교 평가하였다. 화학분석 결과, 카올리나이트 등 1차 점토 외에 불순물로 CaO, K₂O, Na₂O을 포함하는 장석류(카리장석, 소다장석, 회장석)와 규석(SiO₂)이 포함되어 있으며 중국산 점토보다 국내 점토가 규석 및 장석질이 더 많이 함유되어 있음을 알 수 있었다. 도자기의 색상을 좌우하는 철분(Fe₂O₃)의 함량에 대해서는 천안점토, 오부점토, 홍점토의 경우 5 % 이상으로 붉은 색상을 띄며 중국산 (블랙점토, 백점토)에 비하여 철분 함량이 더 높음을 알 수 있다. X-선 결정상 분석을 통하여 원료광물에 존재하는 결정상의 종류를 분석한 결과, 원료 물질 모두 카올리나이트와 할로이사이트 등 1차점토와 함께 쿼츠(quartz)와 장석 등이 주요 결정상(main phase)으로 확인되었다. 이러한 점토광물을 원료로 하여 도자기용 소지를 제조하여 소결 후 물성을 평가하였다. 소성 후 수축률은 백자A급 < 백자B급 < 연분청 < 진분청 < 청자 소지 순으로 나타났으며 환원소성의 경우, 산화소성에 비하여 수축률이 높으며 이는 흡수율 결과와 일치하였다. 1250℃에서 환원소성한 경우, 매우 낮은 흡수율로 자화가 충분히 진행됨을 알 수 있다. 백자소지를 1200℃, 1250℃ 산화분위기에서 소성한 소성체가 환원소성한 소성체보다 백색도가 높으며, 백색도의 인자인 L^* 값이 86~95 %로 환원소성시 81~93 % 보다 높은 것을 알 수 있다. 철분 함량이 높은 청자소지나 분청소지의 경우, 환원분위기에서 소성한 소성체가 산화소성한 소성체보다 백색도가 높으며 a^*, b^* 값이 작은 양상을 확인할 수 있으며, 이는 Fe₂O₃ 산화물의 환원효과에 의한 것으로 판단된다.

• 청정기술
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• 제24권1호
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• pp.77-84
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• 2018

리튬이온전지의 음극활물질로 사용되는 $Li_4Ti_5O_{12}$를 건식 볼밀법으로 합성하였고, $Li_4Ti_5O_{12}$의 전기화학적 특성을 향상시키기 위하여 탄소소재인 polyvinyl chloride (PVC)를 첨가하였다. PVC는 $Li_4Ti_5O_{12}$를 합성하고 난 후에 첨가하였을 때 스피넬 구조를 갖는 물질이 잘 합성되었음을 X-ray diffraction (XRD) 실험으로 확인하였다. 합성하기 전에 탄소재를 첨가하여 열처리를 한 경우에는 탄소재가 미량 첨가되더라도 다른 결정구조의 물질이 합성되는 것을 확인할 수 있었다. 탄소재를 첨가하지 않은 $Li_4Ti_5O_{12}$의 경우 전기전도도 값이 약 $10{\mu}S\;m^{-1}$으로 부도체에 가까운 매우 작은 값을 보였다. 탄소를 첨가함에 따라서 전기전도도가 크게 향상되었으며, 압력을 증가시킬 경우에 최대 10,000배 이상 증가되었다. Electrochemical impedance spectroscopy (EIS) 분석결과 탄소를 첨가할 경우 저항에 해당하는 반원의 크기가 감소하였으며, 이는 전극내의 저항이 감소하였음을 보여준다. Cyclic voltammetry (CV) 분석에 의하면 탄소를 첨가할 경우에 산화피크와 환원피크의 전위차가 줄어 들었으며, 이는 리튬이온의 삽입과 탈리의 속도가 증가하였음을 의미한다. PVC를 9.5 wt% 첨가한 물질의 경우, 0.2 C-rate에서 $180mA\;h\;g^{-1}$, 0.5 C-rate에서 $165mA\;h\;g^{-1}$, 5C-rate에서 $95.8mA\;h\;g^{-1}$의 용량을 나타냄으로써 우수한 출력 특성을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.