• 한국결정성장학회지
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• 제7권3호
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• pp.481-486
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• 1997

국산 하동고령토로부터 AlSiCa의 주원료인 $Al_2O_3$-SiC계 내화물 원료를 합성하는 데는 성공하였으며, 합성된 $Al_2O_3$-Sic 합성분말의 산화반응을 검토하였다. 공기중에서 산소와 반응시켜 Sic가 $SiO_2$로 산화될 때 필요한 활성화 에너지는 $\Delta$G=74.86 KJ/mol 이었으며, 수소분위기에서 $1500^{\circ}C$ 및 $1600^{\circ}C$에서 상압소성한 결과 vaporization 현상때문에 소결특성이 좋지 않았다. whisker-SiC상태로 합성되는 이 복합체는 AlSiCa의 고온내화벽돌이외의 고온구조용 재료로 응용될 수도 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• 한국안광학회지
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• 제7권2호
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• pp.19-25
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• 2002

$SrO-B_2O_3$ 유리들에 같은 양의 $Al_2O_3$와 $SiO_2$를 첨가한 3성분 SrBAl 유리들과 SrBSi 유리들을 제작하여, $^{11}B$ NMR 방법을 이용하여 4배위 붕소 수인 $N_4$, 대칭적 3배위 붕소 수인 $N_{3S}$ 그리고 비대칭적 3배위 붕소 수인 $N_{3A}$를 얻어 구조를 정량적으로 비교 분석하였다. 두 유리 모두에 대해 $BO_3$ 단위의 경우 $Q_{cc}$=2.74MHz, ${\eta}=0.22$이며, $BO_3{^-}$단위의 경우 $Q_{cc}$=2.54MHz, ${\eta}=0.55$ 그리고 $BO_4$ 단위의 경우 $Q_{cc}$=0.60~0.75MHz, ${\eta}{\approx}0.00$이다. SrBAl 유리계에서는 $R_{1st}$($N_4$ 값의 제1변환점)에서의 유리들의 구조는 tetraborate ($[B_8O_{13}]^{-2}$) 단위들과 1차 변형된 diborate($[B_2Al_2O_7]^{-2}$) 단위들로 구성되어졌으며, $R_{max}$($N_4$ 최대인 R)에서 유리의 구조는 diborate($[B_4O_7]^{-2}$) 단위들, metaborate($[BO_2^{-1}]$) 단위들, 1차 변형된 diborate 단위들, 그리고 2차 변형된 diborate($[B_2Al_2O_8]^{-4}$) 단위들로 구성되어졌다. 그리고 3배위인 $AlO_3$ 단위들은 $BO_3$ 단위들보다 SrO로부터 도입된 산소를 우선적으로 배위하여 4배위인 $AlO_4$ 단위들로 전환되었다. 또한, SrBSi 유리계에서는 Si 원자들은 $R{\leq}0.5$ 영역에서는 붕소 망목구조에 기여하지 않으므로 유리 구조는 $SiO_4$ 단위들로 희석(diluted)된 2성분 SrB 유리계와 같은 구조로 구성되어졌으며, $R{\geq}R_{max}$이상의 영역에서는 SrO로부터 도입된 산소에 의해 $SiO_4$ 단위들이 $BO_3{^-}$ 단위들보다 우선적으로 $SiO_4{^-}$ 단위들로 모두 형성되었다. 그리고 $R_{max}$에서 유리의 구조는 diborate 단위들, metaborate 단위들, loose $BO_4([BO_2]^{-1})$ 단위들, 그리고 $SiO_4{^-}([SiO_{2.5}]^{-1})$ 단위들로 구성되어졌다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 자연과학논문집
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• 제8권2호
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• pp.111-118
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• 1996

$Na_2O$-CaO-$SiO_2$ 계 유리의 화학적 내구성을 향상시키면서 작업점도의 변화를 최소화 하기 위하여, 기본 조성 유리를 선정한 후, 이 조성에 $B_2O_3$, ZnO 성분의 첨가량을 변화시키고 $Na_2O$, $Al_2O_3$, $Li_2O$ 성분을 변화시켜가면서 각 성분이 물성에 미치는 영향을 조사하여 최적 조성비를 얻는 것을 목적으로 하였다. 본 실험결과 $Na_2O$-CaO-$SiO_2$계 유리에서 연화점 변화를 최소화하고 화학적내구성을 극대화 시키는 최적조성(wt%)은 다음과 같았다.$B_2O_3$:3.36%, ZnO:2.88%, $Na_2O$:9.93%, $Al_2O_3$, $Li_2O$:0.19%, $SiO_2$:70.56%, CaO:11.22%, $K_2O$:0.14%

• 전기학회논문지
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• 제57권11호
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 대한전자공학회논문지
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• 제14권1호
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• pp.5-14
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• 1977

공기중의 열처리에 의하여 상온에서 낮은 저항을 갖는 PTC 써미스터를 제작했다. 재현성을 높이기 위해 BaTiO3에 Al2O3, SiO2 및 TiO2를 첨가 했으며, 불순물로서 Sb2O3를 첨가했다. 시편은 공기 중에서 1,200℃∼1,380℃로서 가열되었으며, Sb2O3첨가량에 대한 저항관계를 조사했다. 이 시편들은 공기중의 열처리에서도 재현성이 좋았다. 연구된 시편은 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 및 0.16∼0.25wt% Sb2O3를 BaTiO3에 첨가하여 만들었으며 저항값은 14∼300ohm이었다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.34-34
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• 2009

The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with $SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier, $HfO_2$ charge trap layer and $Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about $10^6$ times) (Erase: about $10^4$ times) but also enhanced retention and endurance characteristics are represented.

• 한국재료학회지
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• 제30권7호
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• pp.359-368
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• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.