• Title/Summary/Keyword: $SiO_2$ sol

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Chemical and Microstructural Changes at Interfaces between $ZrO_2.SiO_2$ Glass Fibers Prepared by Sol-Gel Method and Cement Matrices

  • Shin, Dae-Yong;Han, Sang-Mok
    • The Korean Journal of Ceramics
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    • v.1 no.3
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    • pp.160-164
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    • 1995
  • Mechanical and chemical tests were performed on $Zro_2 \cdot SiO_2$ glass fibers manufactured by the sol-gel method and E-glass fibers-reinforced cement composites in order to investigate the interactions between glass fibers and cement matrices. Chemical attack leads to corrosion of the glass fiber surfaces. In the corrosion reactions, the surface of $30ZrO_2 \cdot 70 SiO_2$ glass fibers developed a densified concentric layer, which consists of glass corrosion products with much higher Zr and lower Si than the fresh glass fiber. The layer of reaction product is regarded to stiffen the cement matrices and provide a useful improvement to the mechanical properties. The addition of $ZrO_2$ content increases the corrosion resistance of glass fibers in cement by forming a passivating layer on the surface of glass fibers.

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Fabrication of Sb-doped $SnO_2$ transparent conducting films by sol-gel dip coating and their characteristics (솔-젤 Dip Coating에 의한 Sb-doped $SnO_2$ 투명전도막의 제조 및 특성)

  • 임태영;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.5
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    • pp.241-246
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    • 2003
  • The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

Sol-Gel법을 이용한 YZO/Si 이종접합 구조의 제작과 정류특성

  • Heo, Seong-Eun;Kim, Won-Jun;Kim, Chang-Min;Lee, Hwang-Ho;Lee, Byeong-Ho;Lee, Yeong-Min;Kim, Deuk-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.350-350
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    • 2013
  • Sol-gel법을 이용하여 p-Si 기판위에 yttrium이 도핑된 ZnO (YZO)를 성장하였다. ZnO의 precursor로는 zinc acetate dihydrate를, yttrium의 source로는 yttrium acetate hydrate를 사용하였으며, 용매와 안정제로는 각각 2-methoxy ethanol과 monoethanolamine (MEA)를 사용하였다. yttrium의 doping 농도에 따른 영향을 알아보기 위하여 1~4 at.%로 제작된 YZO sol을 각각 p-type Si 기판에 성장하였으며, 이 후 furnace를 이용하여 500oC에서 1시간 동안 열처리하였다. 성장된 YZO 박막의 표면과 두께를 SEM을 통하여 확인하였으며, XRD를 통한 구조적인 특성을 분석한 결과 모든 박막에서 뚜렷한 c-축 배양성을 갖는 ZnO (0002)피크를 확인하였다. Hall effect를 통하여 YZO는 모두 n-type 특성을 나타낸다는 것을 확인하였으며, 광학적인 특성은 PL을 통해서 분석하였다. n-YZO/p-Si 이종접합의 전류-전압 특성을 분석한 결과 뚜렷한 정류특성을 나타내었다.

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Improvement of Photo-stability for p-Aramid Fibers by SiO2/TiO2 Sol-Gel Method (SiO2/TiO2 sol-gel법을 이용한 p-아라미드 섬유의 내광성 증진)

  • Lee, Young-Il;Jung, Min-Hyuck;Lee, Mun-Cheul
    • Textile Coloration and Finishing
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    • v.25 no.3
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    • pp.172-180
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    • 2013
  • Aramid fibers are being used increasingly in a wide range of application due to low density, high specific strength, high modulus, and high thermal resistance. But owing to its special physical and chemical structures, it is sensitive to absorb the ultraviolet light which will degrade the fiber's useful mechanical properties and structure. In this paper, the sol-gel technique was used to improve the photo-stability of p-aramid fibers. $TiO_2$, modified $SiO_2$/$TiO_2$ sol were used as coating solutions. The influence of the such coatings on the photo-stability of p-aramid fiber was investigated by an accelerated photo-ageing method using xenon lamp. The photo-stability of p-aramid fiber showed obvious improvement after the modified silica binding coating. But the amorphous $TiO_2$ sol coatings showed a negative effect. After 144h light exposure, the modified silane binder-coated fibers showed less degradation in mechanical properties with the retained tensile strength greater than about 70% of the original value.

Ferroelectric Thin Film as a substitute for Non-volatile Memory (비휘발성 메모리용 대체 강유전체 박막)

  • 김창영;장승우;우동찬;남효덕;이희영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.509-512
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    • 1999
  • Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

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Preparation of $Al_2O_3$.$2SiO_2$ glass by the sol-gel process (졸-겔법에 의한 $Al_2O_3$.$2SiO_2$ 유리의 제조)

  • Rhee, Jhun;Chi, Ung-Up;Jo, Dong-Soo
    • Journal of the Korean Ceramic Society
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    • v.20 no.1
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    • pp.3-12
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    • 1983
  • In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

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Catalytic Effects and Characteristics of Ni-based Catalysts Supported on TiO2-SiO2 Xerogel

  • Jeong, Jong-Woo;Park, Jong-Hui;Choi, Sung-Woo;Lee, Kyung-Hee;Lee, Chang-Seop
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2288-2292
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    • 2007
  • The catalytic activities of nickel-based catalysts were estimated for oxidizing acetaldehyde of VOCs exhausted from industrial facilities. The catalysts were prepared by sol-gel methods of SiO2 and SiO2-TiO2 as a xerogel followed by impregnating Al2O3 powder with the nickel nitrate precursor. The crystalline structure and catalytic properties for the catalysts were investigated by use of BET surface area, X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR) techniques. These results show that nickel oxide is transformed to NiAl2O4 spinel structure at the calcination temperature of 400 °C in response to the steps with after- and co-impregnation of Al2O3 powder in sol-gel process. The NiAl2O4 could suppress the oxidation reaction of acetaldehyde by catalysts. The NiO is better dispersed on SiO2-TiO2/Al2O3 support than SiO2/Al2O3 and SiO2-TiO2-Al2O3 supports. From the testing results of catalytic activities for oxidation of acetaldehyde, Catalysts showed a big difference in conversion efficiencies with the way of the preparation of catalysts and the loading weight of nickel. The catalyst of 8 wt.% Ni/TiO2-SiO2/Al2O3 showed the best conversion efficiency on acetaldehyde oxidation with 100% conversion efficiency at 350 °C.

Low Temperature Sintering Process of Sol-gel Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9 Thin films (Sol-gel 법으로 제조된 강유전체 Sr0.9Bi2.1Ta1.8Nb0.2O9 박막의 저온결정화 공정)

  • 김영준;김병호
    • Journal of the Korean Ceramic Society
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    • v.40 no.3
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    • pp.279-285
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    • 2003
  • Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.