• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.239-242
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• 1998

Ca $F_2$ films have superior gate insulator properties than conventional gate insulator such as $SiO_2$, Si $N_{x}$, $SiO_{x}$, and T $a_2$ $O_{5}$ to the side of lattice mismatch between Si substrate and interface trap charge density( $D_{it}$). Therefore, this material is enable to apply Thin Film Transistor(TFT) gate insulator. Most of gate oxide film have exhibited problems on high trap charge density, interface state in corporation with O-H bond created by mobile hydrogen and oxygen atom. This paper performed Ca $F_2$ property evaluation as MIM, MIS device fabrication. Ca $F_2$ films were deposited at the various substrate temperature using a thermal evaporation. Ca $F_2$ films was grown as polycrystalline film and showed grain size variation as a function of substrate temperature and RTA post-annealing treatment. C-V, I-V results exhibit almost low $D_{it}$(1.8$\times$10$^{11}$ $cm^{-1}$ /le $V^{-1}$ ) and higher $E_{br}$ (>0.87MV/cm) than reported that formerly. Structural analysis indicate that low $D_{it}$ and high $E_{br}$ were caused by low lattice mismatch(6%) and crystal growth direction. Ca $F_2$ as a gate insulator of TFT are presented in this paper paperaper

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.575-580
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• 2014

We uniformly coated Eu(III)- and Tb(III)-doped yttrium oxide onto the surface of $SiO_2$ spheres and then characterized them by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction crystallography and UV-Visible absorption. 2D and 3D photoluminescence image map profiles were reported for the core-shell type structure. Red emission peaks of Eu(III) were observed between 580 to 730 nm and assigned to $^5D_0{\rightarrow}^7F_J$ (J = 0 - 4) transitions. The green emission peaks of Tb(III) between 450 and 650 nm were attributed to the $^5D_4{\rightarrow}^7F_J$ (J = 6, 5, 4, 3) transitions. For annealed samples, Eu(III) ions were embedded at a $C_2$ symmetry site in $Y_2O_3$, which was accompanied by an increase in luminescence intensity and redness, while Tb(III) was changed to Tb(IV), which resulted in no green emission.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.34-39
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• 2006

Electrochemical properties of Cu foil current collector with a $Li_{0.5}La_{0.5}TiO_3$ Cu a Si thin film deposited by r.f sputtering as an anode for Li free battery were evaluated. The Cu foil current collectors were lied in and out of plasma during sputtering process. The X-ray diffraction results indicated that the as-deposited Si and $Li_{0.5}La_{0.5}TiO_3$ thin films in and out of plasma did not show any crystalline difference. The $Li_{0.5}La_{0.5}TiO_3$ film in plasma and Si film out of plasma showed better cyclability since crystalline $Li_{0.5}La_{0.5}TiO_3$ has much higher ionic conductivity and crystalline Si film is much sensitive far volume change during charge-discharge process. These results suggested that the deposition of amorphous Si on Cu foil current collector is much better for fabrication of Li free battery and it can be useful for the unique battery with a cycling number constraint of below 10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.41-48
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• 2007

Large colorless single crystals of sodium zeolite X, stoichiometry |Na80 |[Si112Al80O384]-FAU, with diameters up to 200 μm and Si/Al = 1.41 have been synthesized from gels with the composition of 2.40SiO2 : 2.00NaAlO2 : 7.52NaOH : 454H2O : 5.00TEA. One of these, a colorless octahedron about 200 μm in cross-section has been treated with aqueous 0.1 M KNO3 for the preparation of K+-exchanged zeolite X. The crystal structure of |K80|[Si112Al80O384]-FAU per unit cell, a = 24.838(4) A, dehydrated at 673 K and 1 × 10-6 Torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd at 294 K. The structure was refined using all intensities to the final error indices (using only the 707 reflections for which Fo > 4σ (Fo)) R1 = 0.075 (based on F) and R2 = 0.236 (based on F2). About 80 K+ ions per unit cell are found at an unusually large number of crystallographically distinct positions, eight. Eleven K+ ions are at the centers of double 6-rings (D6Rs, site I; K-O = 2.492(6) A and O-K-O (octahedral) = 88.45(22)o and 91.55(22)o). Site-I' position (in the sodalite cavities opposite D6Rs) is occupied by five K+ ions per unit cell; these K+ ions are recessed 1.92 A into the sodalite cavities from their 3-oxygen planes (K-O = 2.820(19) A, and O-K-O = 78.6(6)o). Twety-three K+ ions are found at three nonequivalent site II (in the supercage) with occupancies of 5, 9, and 9 ions; these K+ ions are recessed 0.43 A, 0.75 A, and 1.55 A, respectively, into the supercage from the three oxygens to which it is bound (K-O = 2.36(13) A, 2.45(13) A, and 2.710(13) A, O-K-O = 116.5(20)o, 110.1(17)o, and 90.4(6)o, respectively). The remaining sixteen, thirteen, and twelve K+ ions occupy three sites III' near triple 4-rings in the supercage (K-O = 2.64(3) A, 2.94(3) A, 2.73(5) A, 2.96(6) A, 3.06(4) A, and 3.08(3) A).

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1274-1284
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• 2009

Single crystals of fully dehydrated and fully $Ca^{2+}$-exchanged zeolites A (|$Ca_6$|[$Si_{12}Al_{12}O_{48}$]-LTA) and X (|$Ca_{46}$| [$Si_{100}Al_{92}O_{384}$]-FAU) were brought into contact with Te in fine pyrex capillaries at 623 K and 673 K, respectively, for 5 days. Crystal structures of Te-sorbed $Ca^{2+}$-exchanged zeolites A and X have been determined by single-crystal X-ray diffraction techniques at 294 K in the cubic space group Pm$\overline{3}$ m (a = 12.288(2) $\AA$) and Fd $\overline{3}$ (a = 25.012(1) $\AA$), respectively. The crystal structures of pale red-brown |$Ca_6Te_3$|[$Si_{12}Al_{12}O_{48}$]-LTA and black coloured |$Ca_{46}Te_8$| [$Si_{100}Al_{92}O_{384}$]-FAU have been refined to the final error indices of $R_1/wR_2\;=\;0.1096/0.2768\;and\;R_1/wR_2$ = 0.1054/ 0.2979 with 204 and 282 reflections for which $F_o\;>\;4{\sigma}(F_o)$, respectively. In the structure of |Ca6Te3|[$Si_{12}Al_{12}O_{48}$]- LTA, 6 $Ca^{2+}$ ions per unit cell were found at one crystallographic positions, on 3-fold axes equipoints of opposite 6-rings. In |$Ca_{46}Te_8$|[$Si_{100}Al_{92}O_{384}$]-FAU, 46 $Ca^{2+}$ ions per unit cell were found at four crystallographically distinct positions: 3 $Ca^{2+}$ ions at Ca(1) fill the 16 equivalent positions of site I, 21 $Ca^{2+}$ ions at Ca(2) fill the 32 equivalent positions of site I’, 10 and 12 $Ca^{2+}$ ions at Ca(3) and Ca(4), respectively, fill the 32 equivalent positions of site II. The Te clusters are stabilized by interaction with cations and framework oxygen. In sodalite units, Te-Te distances of 2.86(10) and 2.69(4) $\AA$ in zeolites A and X, respectively exhibited strong covalent properties due to their interaction with $Ca^{2+}$ ions. On the other hand, in large cavity and supercage, those of 2.99(3) and 2.76(11) $\AA$ in zeolites A and X, respectively, showed ionic properties because alternative ionic interaction was formed through framework oxygen at one end and $Ca^{2+}$ cations at the other end.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.338-341
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• 1995

The surface properties after plasma etching of Al(Si, Cu) solutions using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched Al(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxized (partially chlorinated) states, copper shows Cu metallic states and Cu-Clx(x$CuCl_x$ (x$CuCl_x$ (1

• Corrosion Science and Technology
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• v.9 no.2
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Economic and Environmental Geology
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• v.21 no.1
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• pp.29-44
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• 1988

Equilibrium relations between garnet and orthopyroxene have been investigated by reversal experiments in the range of 20-45Kb and $975-1400^{\circ}C$ in the $FeO-MgO-Al_2O_3-SiO_2$(FMAS) system. A mixture of PbO with about 55 mol per cent $PbF_2$ was used as a flux and proved very effective. The Fe-Mg exchange reaction seems to have little or no compositional dependence at these conditions. Combination of the experimental results with the garnet mixing model of Ganguly and Saxena(1984) yields the following geothermometric expression for the common natural assemblages that can be represented essentially within the system $FeO-MgO-CaO-MnO-Al_2O_3-SiO_2$. $$T^{\circ}C=(1971+11.91P(Kb)+1510(X_{Ca}+X_{Mn})^{Gt}/(lnK_D+0.96)-273$$.