• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.168-172
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• 2009

In this paper, we present the carbon nanotube field-effect transistor(CNT-FET) with a double-gate structure. A Carbon nanotube film was aligned by the Langmuir-Blodgett technique and $SiN_x$ was deposited to protect from water, oxygen, and other contaminants. We measured the electrical characteristics of the proposed device as the function of the $V_{BG}$, $V_{TG}$. From this result, we can confirm that proposed device might be employed as a biosensor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.170-170
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• 2004

박막의 접착강도를 측정하기 위하여 수직력과 수평력을 동시에 측정할 수 있는 0.1∼100 N 용량의 2축 로드셀에 기반을 둔 스크레치 테스터를 개발하였다. 반도체용 Si wafer 기판 위에 Au나 Al 등의 금속이 관은 박막으로 증착된 제품을 table에 고정시킨 후, 2축 로드셀(x, z)이 장착된 하중센서의 선단에 Diamond Tip을 장착하여 기판과 박막에 하중(z-axis)을 증가시키면서 동시에 wafer를 x축 방향으로 이동시킨다. 이런 방식으로 시료의 표면을 긁으면 박막이 벗겨져 나가 Diamond Tip이 기판에 닿을 때 서로 다른 경도차에 의해 진동이 발생하게 되고, 이 진동을 Acoustic Emission 센서에서 감지하여 Crack 발생 시점의 Load와 Stroke를 찾아내게 된다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.331-331
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• 2008

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.110.2-110.2
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• 2011

Nishikida et al. (2006) presented the first far-ultraviolet (FUV) em${\lambda}$ission-line images of the Vela supernova remnant (SNR) obtained with FIMS/SPEAR instrument. Those include C III ${\lambda}$977, O VI ${\lambda}{\lambda}$1032, 1038, Si IV+O IV] ${\lambda}{\lambda}$1393, 1403 (un-resolved), C IV ${\lambda}{\lambda}$1548, 1551 emission-line images. As a following work, we re-constructed these emission-line images using the new-version processed FIMS/SPEAR data. Additionally, we made N IV] ${\lambda}$1486, He II ${\lambda}$1640.5, O III] ${\lambda}{\lambda}$1661, 1666 emission-line images. The new-version images cover the whole region of the Vela SNR and show more resolved features than the old-version. We compare these FUV emission-line images with other wavelength (X-ray, optical, etc.) images obtained in previous studies.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.459-464
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• 1999

A carbon-containing silica glass was prepared from orgaincally modified silicate(Ormosil) by heat treatment in N2 atmosphere after the ormosil was synthesized using sol-gel method. The Ormosil was fabricated from the TEOS as the inorganic component and the PDMS as the organic component. The Ormosil changed to balck-coloured glass by carbon decomposed from the PDMS when the Ormosil was heated to 450$^{\circ}C$ 20hrs. A dense silicon oxycarbide glass with 2.08 g/cm3 was obtained by heating the Ormosil at 1050$^{\circ}C$ 10hrs. The microstructure of the carbon-containing silica glass was observed by SEM and the SiOxC4-x structure was confirmed by XPS measurement. The densification of the glass was studied by measurements of specific surface area linear shrinkage and geometric density.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.287-289
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• 2001

The morphology of silica supported MoO$_3$ catalysts, which was prepared by impregnation of ammonium heptamolybdate with various weight loadings up to 35 wt%, was studied using x-ray diffraction. In addition to the orthorhombic phase, the behavior of the rarely studied hexagonal phase was characterized. For high loading catalysts, excess ammonium ions present in the monoclinic and triclinic precursors are capable of occupying interstitial sites of microcrystalline MoO$_3$ during moderate temperature calcinations and in doing so enhance the MoO$_3$-SiO$_2$ interaction. This results in a "well dispersed" morphology at high loadings. Sintering at high temperature is due to loss of ammonium from the oxide framework. Ammonia reimpregnation, which leads back to the well dispersed hexagonal phase, may offer a simple regeneration process for spent Mo containing catalysts.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Applied Chemistry for Engineering
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• v.31 no.2
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• pp.179-186
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• 2020

In this study, chitosan/zeolite composites were prepared by using basalt-based zeolite impregnated with aqueous chitosan solution for the adsorptive separation of CO₂. The prepared composites were characterized by scanning electron microscopy (SEM), Fourier-transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption analysis. In addition, the adsorption equilibrium isotherms for CO₂ and N₂ were measured at 298 K using a volumetric adsorption system, and the results were analyzed by applying adsorption isotherm equations (Langmuir, Freundlich, and Sips) and energy distribution function. It was found that CO₂ adsorption capacities were well correlated with the structural characteristics of chitosan and zeolite, and the ratio of elements [N/C, Al/(Si + Al)] formed on the surface of the composite. Moreover, the CO₂/N₂ adsorption selectivity was calculated under the mixture conditions of 15 V : 85 V, 50 V : 50 V, and 85 V : 15 V using the Langmuir equation and the ideal adsorption solution theory (IAST).