• Molecules and Cells
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• v.25 no.2
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• pp.163-171
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• 2008

The genus Cynodon comprises ten species. The objective of this study was to evaluate the genetic diversity of Korean bermudagrasses at the morphological, cytological and molecular levels. Morphological parameters, the nuclear DNA content and ploidy levels were observed in 43 bermudagrass ecotypes. AFLP markers were evaluated to define the genetic diversity, and chromosome counts were made to confirm the inferred cytotypes. Nuclear DNA contents were in the ranges 1.42-1.56, 1.94-2.19, 2.54, and 2.77-2.85 pg/2C for the triploid, tetraploid, pentaploid, and hexaploid accessions, respectively. The inferred cytotypes were triploid (2n = 3x = 27), tetraploid (2n = 4x = 36), pentaploid (2n = 5x = 45), and hexaploid (2n = 6x = 54), but the majority of the collections were tetraploid (81%). Mitotic chromosome counts verified the corresponding ploidy levels. The fast growing fine-textured ecotypes had lower ploidy levels, while the pentaploids and hexaploids were coarse types. The genetic similarity ranged from 0.42 to 0.94 with an average of 0.64. UPGMA cluster analysis and principle coordinate analysis separated the ecotypes into 6 distinct groups. The genetic similarity suggests natural hybridization between the different cytotypes, which could be useful resources for future breeding and genetic studies.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.786-790
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• 2005

We investigated the particularity of temperature and composition changes in $xNa_2O{\cdot}(52.5-x)B_2O_3{\cdot}47.5SiO_2$ glasses by use of FT-IR, $^{11}B$ NMR, Raman spectrometer. From FT-IR and $^{11}B$ NMR spectrometer, we thought that tetrahedral boron, $BO_4$ units are created $N_4$ increasing tendency generated near $600^{\circ}C$. It's expected that composition ana heat treatment directly contributed to structural changes, this changes are following to $Na_2O$ increasing or decreasing. caused by $N_4\;and\;BO_4$ units are caused by relatively increasing or decreasing in the glasses' structure. Particularly, $BO_4$ units are converted to $BO_3$ units after $600^{\circ}C$ heat treatment for 50h in the composition of $x<18(R<0.5,\;R=Na_2O/B_2O_3\;mol\%)$. On the order hand, $BO_3$ units are converted to, $BO_4$ units after $600^{\circ}C$ heat treatment for 50h in the composition of $x{\geq}18\;(R>0.5)$. This particularity of composition and temperature dependence of structural changes are similarly represented by Raman analysis results.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.166-171
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• 2005

Fe-6Al-9Si(N) alloy powders were synthesized by hybrid process of chemical nitrification and mechanical milling. The nitriding treatment on Fe-6Al-9Si alloy powders formed $\gamma'-Fe_4N$ phase on the powders surface. The nitriding-treated powders were pulverized by horizontal high-energy ball milling machine. The longer ball milling time tended to reduce the size of alloy powders. In ball milling for 36h, extremely fine powders with about $7\~9wt\%$ nitrogen were obtained. Through X-ray diffraction analysis on the powders, it was found out that the longer milling time caused a disappearance of the crystallinity of $\alpha-Fe$ in the powders. TEM study confirmed that the powders is comprised of a few tens nano-meter sized crystals, including $\alpha-Fe$ phase with partially $\gamma'-Fe_4N$ phase. Hysteresis curves of the synthesized powders measured by VSM revealed lower saturation magnetization and higher coercivity, which seemed to be attributed to nitrogen-impregnation and severe residual stress developed during the high energy milling. Microstructure observation on the powder annealed at 873 K for 1 h showed 10 to 20 nm sized $\alpha-Fe$ crystal. Such a enhanced crystallinity significantly increased the magnetization and decreased the coercivity, which was attributed to not only the crystallinity but also residual stress relaxation.

• Journal of the Korean Chemical Society
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• v.13 no.1
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• pp.49-55
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• 1969

X-ray Fluorescence Spectrographic method has been applied for the rapid determination of main components, such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO and $K_2O$ in Silicate Minerals. In this method, Boric Acid was used as a binder after fusion with Lithium Tetraborate in the briquet-making process. The Lithium Flubride, Ammonium di-Hydrogen Phosphate and Ethylene Diamine d-Tartrate crystals were used with Scintillation counter and Gas Flow counter as the detectors. Several influences on this method were discussed, including the particle size of samples and reducing of the matrix effects by dilution with Boric Acid and addition of Lanthanum Oxide with the diluent. In order to test the reproducibility of this method described above, the determination of the same kind of samples were carried out repeatedly, and the results obtained were presented in the table. Calibration curves for each element were presented, and the application of the method was tested with International Rock Standard T-Ⅰ. All the results obtained by X-Ray Fluorescence Spectrographic method were compared with the results by conventional chemical method.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Chemical Society
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• v.17 no.1
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• pp.47-52
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• 1973

Korean bentonite was treated with aqueous NaOH solution under the reaction conditions such as concentration of NaOH, 0.5-6N; ratio of $Na_{2}O$ to $SiO_2$, 1-4; reaction time, 2-30 days; reaction temperature, $70^{\circ}C-90^{\circ}C$. The products were examined by X-ray diffraction patterns. When it was treated with 2N NaOH at $70^{\circ}C$, zeolite species $P_1$ was formed with good yield. In higher concentration and at higher temperature than above, zeolite species $P_1$ was converted to hyeroxysodalite. Together with these crystals, some faujasite type zeolite, sodium A zeolite, mordenite type zeolite etc. was formed depending upon reaction conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.114-115
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• 2006

반도체 기술이 초고집적화 되어감에 따라 공정에서 선폭이 줄어들고, 박막을 다층으로 제조하는 것이 중요하게 되었다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며. 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 물리적 기상 증착법 (PVD)으로 질소비율을 변화하며 확산방지막을 증착하였고, 이를 여러 온도에서 열처리하여 X-ray Diffraction 분석을 하였다.