• Journal of the Korean Institute of Gas
• /
• v.15 no.5
• /
• pp.25-30
• /
• 2011

Biogas obtained from the biodegradable organic wastes in an anaerobic digester consists of $CH_4$ and inert gases such as $CO_2$ and $N_2$. Since the composition of biogas varies by anaerobic digester conditions and the origin of wastes, it is necessary to respond to these variations so as to make stable combustion and accomplish high efficiency when it is used as a fuel for power generating SI engines. In this study, efforts have been made to investigate the effect of changes in the calorific values of biogas on the engine performance and exhaust characteristics. The biogas was simulated by supplying of $CH_4$ with $N_2$ dilution of various ratios, and ECM was developed to achieve accurate control of ignition and combustion. The results show that as the $CH_4$ concentration of the biogas decreases, the optimal spark timing is advanced due to the elevated thermal capacity and lowered $O_2$ concentration of the in-cylinder charge. Furthermore, since combustion temperature was reduced by increased inert gas, $NO_x$ emissions decreased, whereas THC emissions increased.

• Korean Journal of Mineralogy and Petrology
• /
• v.37 no.3
• /
• pp.87-109
• /
• 2024

Two kinds of basaltic outcrop consisting of vesicular gas-pipe and the host massive basalt were observed in the Taeheung-ri area of Namwon-eup, Jeju Island. This is clear evidence of the magmatic differentiation of lava flows after an eruption. Although the petrographic study revealed that both parts contained the same mineral phases such as olivine, clinopyroxene, and plagioclases with accessory alkaline feldspar, and titanite, their contents and compositions are more evolved in the vesicular gas-pipe. Its anorthite and wollastonite contents in plagioclase and clinopyroxene, respectively, are lower than those of the host massive basalt. The whole-rock XRF analysis indicates that vesicular gas-pipe had lower MgO content and higher CaO, Al₂O₃, P₂O₅, Fe₂O₃, Na₂O, TiO₂, SiO₂, and K₂O contents than those of the host massive basalt. Both parts of basalt are classified as tholeiite in the TAS diagram, but the former is plotted in a more differentiated area with higher SiO₂ content than the latter. Large ion lithophile elements are enriched in both types of basalt, but the enrichment is more conspicuous in the former. Rare earth elements are more abundant n porous gas-pipe than in the host massive basalt. In particualr light rare earth elements are highly enriched in both types of basalt ralative to those of chondrite, indicating typical ocean island basalts (OIBs). These findings indicate that the magma differentiation possibly occurred after an eruption, which can be explained by the gas-driven filter-pressing.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.283-290
• /
• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.5
• /
• pp.217-224
• /
• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
• /
• v.6 no.4
• /
• pp.328-336
• /
• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Korean Journal of Heritage: History & Science
• /
• v.44 no.3
• /
• pp.132-149
• /
• 2011

In ancient period, a variety of inorganic or organic pigments had been used as colorants in various kinds of religious and secular paintings such as tomb paintings and wall and scroll paintings in buddhist temples, and danchung(cosmic patterns) for the surface of wooden buildings. This study discusses the results obtained from an analysis of the pigments on the wall paintings of Yeongsanjeon(Hall of Vulture Peak) in Tongdo temple by a qualitative analysis using a field-XRF. The results can be briefly summarized as follows. Firstly, assuming from the major components examined from F-XRF analysis, raw materials of pigment of each color are: red to be Cinnabar(HgS) or Hematite($Fe_2O_3$); white to be White Lead[$2PbCO_3{\cdot}Pb(OH)_2$] in most cases and Calcite($CaCO_3$) or Chalk($CaCO_3$), Kaolin($Al2O_3{\cdot}SiO_2{\cdot}4H_2O$) in some cases; yellow to be Yellow Ocher[$FeO(OH){\cdot}nH_2O$]; black to be carbon(C); green on the painted surface to be Celadonite[$K(Mg,Fe^{2+})(Fe^{3+},Al)(Si_4O_{10})(OH)_2$] in most cases; dark green on the halo of figures to be Malachite[$CuCO_3{\cdot}Cu(OH)_2$], Copper Green[$2CuO{\cdot}CO_2{\cdot}H_2O$] or Atacamite[$Cu_2Cl(OH)_3$]. Secondly, incarnadine and pink were made by mixing with more than two pigments such as red and white for making various tone of colors. The qualitative analysis of pigments on the wall paintings of Yeongsanjeon, in conclusion, displays that the all pigments for ancient periods are inorganis pigments. However, it has the limitation to identify a definite kinds of mineral for each pigment because it was not possible to collect samples from cultural heritage for conducting a crystalline analysis of XRD.

• Journal of Sensor Science and Technology
• /
• v.11 no.5
• /
• pp.309-318
• /
• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Korean Journal of Ecology and Environment
• /
• v.36 no.3 s.104
• /
• pp.235-241
• /
• 2003

The effect of ultraviolet (UV) radiation on the characteristics of algae-derived dissolved organic matter (DOM) was examined by comparing the biodegradability and DOM fraction distribution of algal DOM before and after UV exposure. Algal DOM from two axenic cultures of Microcystis aeruginosa and Oscillatoria agardhii were irradiated for 24 h at a UV intensity of 42 W/$m^2$. A complete degradation of algal DOM during the UV exposure did not occur, remaining at constant concentrations of dissolved organic carbon(DOC). After UV exposure, however, microbial degradations were reduced by 17% in M. aeruginosa and 53% in O. agardhii, respectively, and decomposition rates also were two times lower in UV exposed algal DOM. In addition, the chemical compositions of algal DOM altered substantially after UV radiation exposure. The proportions of hydrophilic bases (HiB; protein-like DOM) decreased considerably in both algal DOM sources after UV exposure (16.8% and 20.0% of DOM, respectively), whereas those of hydrophilic acids (HiA; carboxylic acids-like DOM) increased as much as the decrease of the HiB fraction. Capillary ion electrophoresis (CE) analysis showed that several carboxylic acids increased significantly after UV exposure, further confirming an increase in HiA fractions. The results of this study clearly indicate that algal DOM can be changed in its chemical composition as well as biodegradability without complete degradation by UV radiation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.404-404
• /
• 2016

태양전지 제작 시 표면에 피라미드 구조를 형성하면 입사되는 광의 흡수를 높여 광 생성 전류의 향상에 기여한다. 일반적인 KOH를 이용한 습식 표면조직화 공정은 평균 10%의 반사율을 보였으며, 유도 결합 플라즈마를 이용한 RIE 공정은 평균 5.4%의 더 낮은 반사율을 보였다. 그러나 RIE 공정을 이용한 표면조직화는 낮은 반사율과 서브 마이크론 크기의 표면 구조를 만들 수 있지만 플라즈마 조사에 의한 표면 손상이 많이 발생하게 된다. 이러한 표면 손상은 태양전지 제작 시 표면에서 높은 재결합 영역으로 작용하게 되어 포화 전류(saturation currents, $J_0$)를 증가시키고 캐리어 수명(carrier lifetime, ${\tau}$)을 낮추는 결함 요소로 작용한다. 이러한 플라즈마에 의한 표면 손상을 제거하기 위해 HF, HNO3, DI-water를 이용하여 DRE(Damage Remove Etching) 공정을 진행하였다. DRE 공정은 HF : DI-water 솔루션과 HNO3 : HF : DI-water 솔루션의 두 가지 공정을 이용하여 공정 시간을 가변하며 진행하였다. 포화전류($J_0$), 캐리어 수명(${\tau}$), 벌크 캐리어 수명(Bulk ${\tau}$)을 비교를 하기위해 KOH, RIE, RIE + DRE 공정을 진행한 세 가지 샘플로 실험을 진행하였다. DRE 공정을 적용할 경우 공정 시간이 지날수록 반사도가 높아지는 경향을 보였지만, 두 번째의 최적화된 솔루션 공정에서 $2.36E-13A/cm^2$, $42{\mu}s$의 $J_0$, Bulk ${\tau}$값과 가장 높은 $26.4{\mu}s$의 ${\tau}$를 얻을 수 있었다. 이러한 결과는 오제 재결합(auger recombination)이 가장 많이 발생하는 지역인 표면과 불균일한 도핑 영역에서 DRE 공정을 통해 나아진 표면 특성과 균일한 도핑 프로파일을 형성하게 되어 재결합 영역과 $J_0$가 감소 된 것으로 판단된다. 높아진 반사도의 경우 $SiN_x$를 이용한 반사방지막을 통해 표면 반사율을 1% 이내로 내릴 수 있어 보완이 가능하였다. 본 연구에서는 RIE 공정 중 플라즈마에 의해 발생하는 표면 손상 제거를 통하여 캐리어 라이프 타임의 향상된 조건을 찾기 위한 연구를 진행하였으며, 기존 RIE 공정에 비해 반사도의 상승은 있지만 플라즈마로 인한 표면 손상을 제거하여 오제 재결합에 의한 발생하는 $J_0$를 낮출 수 있었고 높은 ${\tau}$값인 $26.4{\mu}s$의 결과를 얻어 추후 태양전지 제작에 향상된 효율을 기대할 수 있을 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.