• Journal of Korea Foundry Society
• /
• v.14 no.1
• /
• pp.28-34
• /
• 1994

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04b
• /
• pp.3-5
• /
• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.333-336
• /
• 1999

The relationship between the DC degradation characteristics of the $ZnO-Bi_2O_3$ varistor and post-annealing is investigated in this study. $ZnO-Bi_2O_3$ varistors containing $SiO_2$ range 0.3 mol% were fabricated by standard ceramic techniques. The post- annealing is performed at $550^{\circ}C$ for 0, 1.5 and 5h. A little phase transition is found according to the analysis of X-ray diffraction. DC degradation tests were conducted at $115\pm3^{\circ}C$ for periods up to 22h. Current-voltage analysis was used to determine nonlinear coefficients($\alpha$). Capacitance-voltage analysis enable the donor density($N_d$) and the barrier height($E_B$) to be determined. From above analysis, it is found that the past-annealing for 5h improved degradation characteristics in $ZnO-Bi_2O_3$ with Si additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.134-134
• /
• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• Journal of Sensor Science and Technology
• /
• v.29 no.1
• /
• pp.27-32
• /
• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• The Journal of Korean Academy of Prosthodontics
• /
• v.41 no.3
• /
• pp.379-386
• /
• 2003

Statement of problem. Resin cements are widely used in adhesive dentistry specially on all ceramic restorations. It is needed to find out adequate bonding strength between different porcelain surface treatments, commercially available porcelains, and different resin cement systems. Purpose. The purpose of this study was to evaluate shear bond strength of resin cements bonded to porcelains in three different modalities; 5 different porcelain surface treatments, 3 different resin cement systems and 3 different commercially available pressable porcelains. Material and Method. This study consisted of 3 parts. Part I examined the effect of five different surface treatments on the pressable porcelain. Fifty discs (5 mm in diameter and 3 mm in height) of Authentic porcelain were randomly divided into 5 groups (n = 10). The specimens were sanded with 320 grit SiC paper followed by 600 grit SiC paper. The specimens were treated as follow: Group 1-Sandblasting (aluminum oxide) only, Group 2 - sandblasting/ silane, Group 3 - sandblasting/ acid etching/ silane, Group 4 - acid etching only, Group 5 - acid etching/ silane. Part II examined the shear bond strength of 3 different resin cement systems (Duolink, Variolink II, Rely X ARC) on acid etching/ silane treated Authentic pressable porcelain. Part 3 examined the shear bond strength of Duolink resin cement on 3 different pressable porcelains (Authentic, Empress I, Finesse). All cemented specimens were stored in distilled water for 2 hours and tested with Ultradent shear bond strength test jig under Universal Instron machine until fracture. An analysis of variance(ANOVA) test was used to evaluate differences in shear bond strength. Result. The shear bond strength test resulted in the following: (1) Acid etched porcelains recorded greater shear bond strength values to the sandblasted porcelains. (2) Silane treated porcelains recorded greater shear bond strength values to non-silane treated porcelains. (3) There was no significant difference between sandblasting/ acid etching/ silane treated and acid etching/ silane treated porcelains. However those values were much higher than other three groups. (4) The shear bond strength with Variolink II was lower than the value of Duolink or Rely X ARC. (5) The shear bond strength of Finesse was lower than the value of Authentic or Empress I.

• Korean Journal of Materials Research
• /
• v.20 no.3
• /
• pp.167-173
• /
• 2010

In this study, we used activated carbon (AC) and titanium oxysulfate as a titanium precursor to prepare carbon/titania composites. We then mixed it with bentonite in different ratios to make a carbon/titania/bentonite monolith for use in architecture bricks by using Phenolic rosin (PR) as a bonding agent. The physicochemical properties of the prepared composites were analyzed by BET surface area, scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), self-cleaning effect and bactericidal tests. The BET surface areas increased as the ratio of carbon/titania composites increased. The SEM microscopy showed that the $TiO_2$ and bentonite were coated on the surface of the AC. The XRD patterns showed a mixture structure of anatase and rutile of $TiO_2$ with a clear $SiO_2$ structure. The EDX spectra of the carbon/titania/bentonite monolith confirmed the presence of various elements, namely C, O, Ti and Si, as well as other, impure elements. Moreover, to determine the self-cleaning effect of the carbon/titania/bentonite monolith, we used methylene blue (MB, $C_{16}H_{18}N_3S{\cdot}Cl{\cdot}3H_2O$) in an aqueous solution under the irradiation of visible light. Accordingly, all of the samples had excellent degradation of the MB solution. Furthermore, it was observed that the composites with sunlight irradiation had a greater effect on E. coli than any other experimental conditions.

• Korean Journal of Materials Research
• /
• v.24 no.5
• /
• pp.243-248
• /
• 2014

Silicon-carbon composite was prepared by the magnesiothermic reduction of mesoporous silica and subsequent impregnation with a carbon precursor. This was applied for use as an anode material for high-performance lithium-ion batteries. Well-ordered mesoporous silica(SBA-15) was employed as a starting material for the mesoporous silicon, and sucrose was used as a carbon source. It was found that complete removal of by-products ($Mg_2Si$ and $Mg_2SiO_4$) formed by side reactions of silica and magnesium during the magnesiothermic reduction, was a crucial factor for successful formation of mesoporous silicon. Successful formation of the silicon-carbon composite was well confirmed by appropriate characterization tools (e.g., $N_2$ adsorption-desorption, small-angle X-ray scattering, X-ray diffraction, and thermogravimetric analyses). A lithium-ion battery was fabricated using the prepared silicon-carbon composite as the anode, and lithium foil as the counter-electrode. Electrochemical analysis revealed that the silicon-carbon composite showed better cycling stability than graphite, when used as the anode in the lithium-ion battery. This improvement could be due to the fact that carbon efficiently suppressed the change in volume of the silicon material caused by the charge-discharge cycle. This indicates that silicon-carbon composite, prepared via the magnesiothermic reduction and impregnation methods, could be an efficient anode material for lithium ion batteries.

• Economic and Environmental Geology
• /
• v.43 no.3
• /
• pp.269-278
• /
• 2010

We investigated characteristics of the coloring material of Dancheong pigments and hope that this study contributes the revival of traditional Dancheong pigments color. For this purpose, we collected Dancheong fragment samples that fell off naturally from old wooden buildings in Gwangju and Jeonnam and analyzed the natural coloring material by XRD and EDS-SEM analysis method. In white pigments of Dancheong fragments, it is confirmed that gypsum$(CaSO_{4}{\cdot}2H_{2}O)$, quartz$(SiO_{2})$, white lead$(PbCO_{3})$ and calcite$(CaCO_{3})$ which have been used for white pigments since ancient times and $TiO_{2}$ which is common used in modern times. In red pigments of Dancheong fragments, it is confirmed that hematite$(Fe_{2}O_{3})$ and red lead$(Pb_{3}O_{4})$, which have been used for red pigments since ancient times and C.I. pigment orange $13(C_{32}H_{24}C_{12}N_{8}O_{2})$ but there is no cinnabar(HgS) which has been used since B.C. 3000 in China. In yellow pigments of Dancheong fragments, it is confirmed that crocoite$(PbCrO_{4})$ and massicot(PbO). In blue pigments of Dancheong fragments, it is confirmed that sodalite$(Na_{4}BeAlSi_{4}O_{12}Cl)$ and nosean $(Na_{8}Al_{6}Si_{6}O_{24}SO_{4})$ as coloring material of blue pigment and C.I. pigments blue $29(Na_{7}Al_{6}Si_{6}O_{24}S_{3})$ which is used in modern times. In green pigments of Dancheong fragments, it is confirmed that calumetite$(Cu(OHCI)_{2}{\cdot}2H_{2}O)$, escolaite(Cr2O3), dichromium trioxide$(Cr_{2}O_{3})$, emerald green$(C_{2}H_{3}As_{3}Cu_{2}O_{8})$, and C.I. pigments green$(C_{32}H_{16}-XCl_{x}Cu_{8})$ which is used in modern time. In black pigments of Dancheong fragments, Chiness ink(carbon black) is confirmed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.2
• /
• pp.62-66
• /
• 2016

In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with $Al_2O_3$ and $Y_2O_3$ sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under $1950^{\circ}C$ and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of $3{\times}4{\times}40mm$, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at $1200{\sim}1400^{\circ}C$ for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at $1300^{\circ}C$ for 5 hr.