• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Membrane and Water Treatment
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• v.15 no.1
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• pp.21-29
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• 2024

1H,1H,2H,2H-perfluorodecytriethoxysilane (C₁₆H₁₉F₁₇O₃Si) be successfully applied to the hydrophobic modification of Al₂O₃ tubular ceramic membrane. Taking the concentration of modification solution, modification time, and modification temperature as factors, orthogonal experiments were designed to study the hydrophobicity of the composite membranes. The experiments showed that the modification time had the greatest impact on the experimental results, followed by the modification temperature, and the modification solution concentration had the smallest impact. Concentration of the modified solution 0.012 mol·L^-1, modification temperature 30 ℃ and modification time 24 h were considered optimal hydrophobic modification conditions. And the pure water flux reached 274.80 kg·m^-2·h^-1 at 0.1MPa before hydrophobic modification, whereas the modified membrane completely blocked liquid water permeation at pressures less than 0.1MPa. Air gap membrane distillation experiments were conducted for NaCl (2wt%) solution, and the maximum flux reached 4.20 kg·m^-2·h^-1, while the retention rate remained above 99.8%. Given the scarcity of freshwater resources in coastal areas, the article proposed a system for seawater desalination using air conditioning waste heat, and conducted preliminary research on its freshwater production performance using Aspen Plus. Finally, the proposed system achieved a freshwater production capacity of 0.61 kg·m^-2·h^-1.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.515-519
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• 2009

Carbon layers were fabricated on silicon carbide by chlorination reaction at temperatures between $1000^{\circ}C$ and $1500^{\circ}C$ with $Cl_2/H_2$ gas mixtures. The effect of reaction temperature on the micro-structures and tribological behavior of SiC derived carbon layer was investigated. Tribological tests were carried out ball-on-disk type wear tester. Carbon layers were characterized by X-ray diffractometer, Raman spectroscopy and surface profilometer. Both friction coefficients and wear rates were maintained low values at reaction temperature up to $1300^{\circ}C$ but increased suddenly above this temperature. Variation of surface roughness as a function of reaction temperature was dominant factor affecting tribological transition behavior of carbon layer derived from silicon carbide at high temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of the Korean Society of Food Science and Nutrition
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• v.44 no.10
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• pp.1458-1469
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• 2015

This study was carried out to investigate the nitrite scavenging activities (NSA) of nine kinds of wild vegetables in a $NaNO_2$ model system and nitrite of Chinese cabbage as well as the inhibitory effect of kimchi containing a mixture of wild vegetables (MWV) with nitrite scavenging activity on brain neuronal cell death. NSA was higher at pH 1.2 than pH 4.2 in all samples. NSA of extracts from sprouts of Oenothera laciniata and Aster scaber (AS) was above 90% at pH 1.2. AS, Codonopsis lanceolate (CL), Adenophora triphylla (AT), Platycodon grandiflorum (PG), and Taraxacum officinale (TO) extracts showed significantly higher levels of NSA than those from other extracts at pH 4.2. CL, AT, PG, and TO extracts showed high NSA on nitrite of Chinese cabbage. In addition, the effects of MWV on antioxidant and brain neuronal cell death induced by oxidative stress were investigated in human brain neuroblastoma SK-N-SH cells. MWV extract attenuated $H_2O_2$-induced cell death and reactive oxygen species (ROS) generation in SK-N-SH cells. MWV extract showed significantly higher DPPH radical scavenger activity when compared to normal kimchi extract. MWV extract showed an inhibitory effect on brain neuronal cell death against oxidative stress by antioxidant activities.

• Journal of the Korean Society of Food Science and Nutrition
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• v.29 no.4
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• pp.743-746
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• 2000

The possiblity of sepiae os as a calcium supplement in food was studied. Elementary contents of sepiae os were as follows; Ca 53.254%, O 26.781%, Na 14.905%, Cl 4.37%, Sr 0.507%, P 0.068% and Si 0.051%, respectively. Most of calcium in sepiae os was present as a form of CaCO3. Sruface area of sepiae os was found as 386 m2/g, and scanning electron micrograph showed sepiae os has multilayer struture. Buffering capacity of sepiae os that of CaCO3. With above results, sepiae os can be used as a calcium supplement in food with good chacterateristics.

• Clean Technology
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• v.7 no.3
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• pp.215-223
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.74-83
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• 2001

FHD(Flame Hydrolysis Deposition) 공정은 광통신에서 사용되는 수동형 집적광학소자를 제작하는 공정으로서, SiCl$_4$를 형성하는 방법이다. 이 FHD 공정은 화염 형성에 관여하는 장비의 조건에 따른 매우 다양한 공정인자에 의하여 박막의 조성이 결정되므로, 박막의 조성을 예측하는 것이 용이하지 않았다. 본 연구에서는 FHD 공정에서 첨가가스의 유량을 제어하여 박막의 조성 및 광학적 특성을 예측할 수 있는 공정 분석의 기초자료를 제공하기 위하여 FTIR과 ICP-AES를 이용하여 실리카 soot의 조성분석에 대한 연구를 수행하였다. FTIR 흡수스펙트럼을 통해 실리카 soot에 존재하는 Si-O, B-O, OH($H_2O$) 농도의 변화를 관찰할 수 있었으며, ICP-AES를 통해 B-O의 흡수스펙트럼의 변화를 B의 농도와 정량적으로 연관지을 수 있었다.

• The Journal of Engineering Geology
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• v.8 no.3
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• pp.247-259
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• 1998

Groundwater quality of the natural mineral water was investigated in hydrochemical aspects in order to ensure that mineral water meets stringent health standards. There exist 20 mineral water plants in the Daebo granite and 4 mineral water plants in the Bulguksa granite, respectively. Both granite areas show some differences in water chemistry. The pH, EC, hardness, total ionic contents in groundwater of the Daebo granite area are higher relative to those of the Bulguksa granite area. The content of major cations is in the order of Ca>Na>Mg>K, while that of major anions shows the order of $HCO_3>SO_4$>Cl>F. The fact that the $Ca-Na-HCO_3$ type is most predominant among water types may reflect that the dissolution of plagioclase that is most abundant in granitic rocks plays a most important role in groundwater chemistry. Representative correlation coefficients between chemical species are variable depending on geology. In the Daebo granite area, $Ca-HCO_3(0.84),{\;}Mg-HCO_3(0.81),{\;}SiO_2-Cl(0.74),{\;}Na-HCO_3(0.70)$ show relatively good correlationships. In the Bulguksa granite area, fairly good correlationships are found among some components such as K-Mg(0.93), $K-HCO_3(0.92)$, Mg-Cl(0.92), $Cl-HCO_3(0.91)$, and K-F(0.90). According to saturation index, most chemical species are undersaturated with respect to major minerals, except for some silica phases. Groundwater is slightly undersaturated with respect to calcite, whereas it is still greatly undersaturated with respect to dolomite, gypsum and fluorite. Based on the phase equilibrium it is clear that groundwater is mostly in equilibrium with kaolinite and becomes undersaturated with respect to feldspars, evolved from the stability area of gibbsite during water-rock interaction. While the activity of silica increases, there is no remarkable increase in the acivities of alkali ions and pH, which indicates that some amounts of silicic acid dissolved from silica phases as well as feldspars were provided to groundwater. It is concluded that chemical evolution of groundwater in granite aquifers may continue to proceed with increasing pH.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.