• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.531-536
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• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.865-868
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• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3535-3536
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.168-168
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• 2004

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.35-43
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• 1990

A series of $TiO_2-SiO_2$catalysts were prepared by coprecipitation from the mixed solution of titanium tetrachloride and sodium silicate. Some of the samples were treated with 1N $H_2SO_4$ and used as modified catalysts. The catalytic activities of modified catalysts were higher than those of unmodified catalysts, and the effect of modification on the catalytic activity was higher for 2 - propanol dehydration than for cumene dealkylation. The catalytic activity of unmodified catalysts was correlated with their acid amount for the above two reactions. As $TiO_2-SiO_2$ catalysts had relatively large amount of weak acid sites and small amount of strong acid sites, the catalytic activity for 2 - propanol dehydration was higher than that for cumene dealkylation. The effect of modification on catalytic activity increased with increasing $TiO_2$content of the catalysts. Actually, $92-TiO_2-SiO_2/SO_4{^2}$had the highest increment in catalytic activity and $10-TiO_2-SiO_2/SO_4{^2}$had the lowest increment for the 2 - propanol dehydration.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.389-393
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• 2013

A rhodamine B-based fluorescent probe for nitrite ion ($NO{_2}^-$) has been designed, synthesized, characterized and its properties for recognition of $NO{_2}^-$ were studied. Nearly non fluorescent probe upon reaction with nitrite ion significantly triggered the fluorescence. Fluorescence response is based on ring opening of the spirolactam of rhodamine B phenyl hydrazide showing maximum absorbance at 552 nm and maximum emission at 584 nm. Probe 3 exhibited high sensitivity and extreme selectivity for nitrite ion over other common ions and oxidants ($Cl^-$, $ClO^-$, $ClO{_2}^-$, $ClO{_3}^-$, $ClO{_4}^-$, $SO{_4}^{2-}$, $SiO{_3}^{2-}$, $NO{_3}^{2-}$, $CO{_3}^{2-}$) examined in methanol water (1:1, v/v) at pH 7.0. The probe might be a new efficient tool for detection of nitrite ion in natural water and biological system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.326-329
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• 1996

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

• Journal of Industrial Technology
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• v.6
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• pp.13-17
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• 1986

The effect of supersaturation on morphology of silicon carbide by chemical vapor deposition using $CH_3SiCl_3-H_2$ gas mixture system was investigated. The experimental results show that the final structure of silicon carbide deposits is coarser as total pressure increases or ${\alpha}$-ratio decreases. It is believed because supersataration of Si-source decreases as total pressure increases or ${\alpha}$-ratio decreases.