• Electrical & Electronic Materials
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• v.10 no.6
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• pp.555-561
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• 1997

The passivation of n-GaAs(100) surface has investigated by photoreflectance(PR). The surface of the sample was treated with the 0.001 N solution Se/NH$_4$OH. After the surface treatment, the samples were annealed between 400 to $700^{\circ}C$ in a $N_2$atmosphere for 10 min. The intensity of PR signal and period of Franz-Deldysh oscillation(FKO) gradually decreased as the annealing temperature increased. The surface electric field(E$_{s}$) of the sample annealed at $600^{\circ}C$ is obtained 1.34$\times$10$^{5}$ V/cm. This value is 1.97 times less than that of unannealed sample. It has found that the passivation of surface occurred when the surface of the sample had been treated with Se/NH$_4$OH solution and annealed from 500 to $600^{\circ}C$. This result could be due to activation of elemental Se on the surface. It has also found that the elemental Se of the surface diffused about 100 $\AA$ into the bulk GaAs when Se-treated sample was annealed at $600^{\circ}C$.>.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.11-16
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• 1998

In this study, we prepared a Na$_2$Se/NH$_4$OH solution to investigate a passivation effect of Se on GaAs surface. X-ray photoelectron spectroscopy and photoluminescence (PL) were used to analyse the surface chemical bonding states and the optical properties of GaAs after Se-treatment and a successive exposure to air, respcetively. It was observed that all of the observed selenium bound with arsenic to form As-Se bond and showed only one oxidation state as -2. PL intensity of Se-passivated surface was larger than that of HCI-cleaned surface, and this means that the effective reduction of surface state density of GaAs was successfully obtained by this treatment. However the existence of partial oxide on the Se-passivated surface was seemed to be a major cause to the degradation of Se passivation effcet. PL intensity of Se-passivated surface also decreased according to air-exposure and converged to that of HCI-cleaned surface.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.377-380
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• 2015

In this paper, we have investigated the optimization of $I_2$ recovery process from $NH_4I$ solution, which is generated as by-product during the amination reaction of p-diiodobenzene (PDIB) for p-phenylenediamine (PPD) synthesis. The recovered $I_2$ is then recycled as a raw material for PDIB synthesis. We have employed a cation exchange resin to recover $I_2$ from $NH_4I$ sample solution, and determined the breakthrough point and exchange capacity from the breakthrough curve. Furthermore, we have suggested optimum conditions of our $I_2$ recovery process by measuring the purity and yield of recovered $I_2$ with respect to the concentrations of $NH_4I$ and oxidant ($H_2O_2$) solutions, the oxidation time, and the temperature of drying process. Finally, the yield and purity as high as 94.96% and 96.65%, respectively were obtained by reusing the residual solution still containing unrecovered iodide ions.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• Journal of Bio-Environment Control
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• v.28 no.2
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• pp.110-116
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• 2019

This study was conducted to determine the effects of a pre-planting fertilizers with various $NH_4{^+}:NO_3{^-}$ ratios in a coir dust:peatmoss:perlite (3.5:3.5:3.0, v/v/v) medium on the growth of hot pepper (Capsicum annuum L. cv. Nokkwang) plug seedling. Nitrogen levels were fixed to $300mg{\cdot}L^{-1}$ and the $NH_4{^+}:NO_3{^-}$ ratios were varied to 0:100, 27:73, 50:50, 73:27, and 100:0. The 50-cell trays were filled with treatment media containing pre-plant fertilizers, then seeds were sown. After seeds were germinated, the trays were moved to greenhouse and seedlings were feed with 13-2-13 and 20-9-20 fertilizers, alternatively. The changes in pH and EC were measured every week and soil solution for nutrient concentrations were analyzed in week 0, 3, and 7. The measurements of seedling growths as well as analysis of tissue nutrient contents were also conducted in week 7. The varied $NH_4{^+}:NO_3{^-}$ ratios did not influence on the pHs of root media after incorporation of pre-planting fertilizers, but the ECs were heightened as proportion of $NH_4{^+}$ to $NO_3{^-}$ were elevated. During the raising of seedlings, the pHs rose over time in the treatments of 0:100 and 27:73 ($NH_4{^+}:NO_3{^-}$). The concentrations of all macro-elements in root media decreased gradually as seedlings grew in all treatments. The seedling growths 7 weeks after seed sowing were the highest in the treatments of 27:73 and 50:50 ($NH_4{^+}:NO_3{^-}$) and those became worse in the treatments of higher $NH_4{^+}$ ratios than 73%. In terms of inorganic element contents based on the dry weight of above ground tissue, the treatment of 0:100 showed the lowest content of Ca, Mg, Na, Cu, Mn, and Zn. Based on the results, it is desired that $NH_4{^+}$ ratio in pre-planting fertilization is maintained to be 50% or less for the raising of hot pepper plug seedlings.

• Journal of Bio-Environment Control
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• v.27 no.2
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• pp.173-179
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• 2018

Investigation of the optimum levels of pre-plant nitrogen for raising of hot pepper (cv. Nokkwang) plug seedlings was the objective of this research. To achieve this, the pre-plant nitrogen levels were varied to 0, 100, 250, 500, 750, 1,000, and $1,500mg{\cdot}L^{-1}$ and the other essential nutrients were controlled to equal concentrations in all treatments. All the fertilizers were added during the formulation of the mixed medium of coir dust, peatmoss, and perlite with the ratio of 35, 35, and 30% (v/v/v). The root medium containing pre-plant fertilizer was packed into 50-cell plug trays and seeds were sown. The measurement of pH and EC in every week, soil solution analysis for nutrients in week 0, 3, and 7 and growth measurements as well as tissue analysis for nutrient contents in week 7 were conducted. The pHs measured before seed sowing did not show significant differences, but the differences among treatments became significant as seedlings grow bigger. The soil solution ECs were significantly different among treatments in week 0 and these differences were diminished by degrees after week 3, resulting in no significant differences among treatments in week 7. The trends in changes of $NH_4-N$, $NO_3-N$, and other the macro-element concentrations in soil solution of root media were similar to those of ECs. The treatments of 500 and $750mg{\cdot}L^{-1}$ N were more effective than other treatments on seedling growth. The seedling growths in the treatments containing higher N than $1,000mg{\cdot}L^{-1}$ and control were severely suppressed. The elevated pre-plant N concentrations in the root medium resulted in the increase of tissue N contents. The treatments of 500 and $750mg{\cdot}L^{-1}$ N shown the highest seedling growths had 5.13% and 5.31%, respectively, in tissue N contents based on the dry weight of above ground tissue at week 7. The results of this study indicated that the optimum level of pre-plant N is 500 to $750mg{\cdot}L^{-1}$ for the raising of hot pepper plug seedlings.