Calculation of Electron concentration and Electrostatic potential profile for $Al_{x}Gal{-x}As/Ga_{x}In1$_{-x}$ As/GaAs HEMT device by 2-Dimensional Quantum Mechanical analysis)
(2차원 양자 역학적 해석에 의한 고속 통신용 $Al_{x}Gal{-x}As/Ga_{x}In1$_{-x}$ As/GaAs HEMT 소자의 전자 농도 및 전위분포 계산 )
-
- Journal of the Korean Institute of Telematics and Electronics A
- /
- v.30A no.3
- /
- pp.76-87
- /
- 1993