• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.128-132
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• 2020

Total organic carbon (TOC) analysis equipment, which was previously used to prevent eutrophication in advance, is heavy, bulky, and expensive; therefore, so it is difficult to be carried and has been used as an experimental unit. In this study, a through-carbon analysis chip that integrates pretreatment through photocatalytic oxidation and carbon dioxide measurement using a pH indicator was investigated. Both the total carbon - inorganic carbon method and the nonpurgeable organic carbon (NPOC) measurement method require an acidification part for injecting an acid solution for inorganic carbon measurement and removal, an oxidation part for total carbon or NPOC oxidation and a measurement part for Carbon dioxide (CO₂) measurement. Among them, the measurement of oxidation and CO₂ requires physical technology. The proposed TOC analysis chip decomposed into CO₂ as a result of the oxidizing of organic carbon using a photocatalyst, and the pH indicator that was changed by the generated CO₂ was optically measured. Although the area of the sample of the oxidation part and the pH indicator of the measurement part were distinguished in an enclosed space, CO₂ was quantified by producing an oxidation part and a measurement part that shared the same air in one chip. The proposed TOC analysis chip is less expensive and smaller, cost and size are disadvantages of existing organic carbon analysis equipment, because it does not require a separate carrier gas to transport the CO₂ gas in the oxidation part to the measurement part.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.2-418.2
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• 2016

$Al_2O_3$ passivation layer has excellent passivation properties at p-type Si surface. This $Al_2O_3$ layer forms thin $SiO_2$ layer at the interface. There were some studies about inserting thermal oxidation process to replace naturally grown oxide during $Al_2O_3$ deposition. They showed improving passivation properties. However, thermal oxidation process has disadvantage of expensive equipment and difficult control of thin layer formation. Wet chemical oxidation has advantages of low cost and easy thin oxide formation. In this study, $Al_2O_3$/$SiO_2/Si(100)$ interface was formed by wet chemical oxidation and PA-ALD process. $SiO_2$ layer at Si wafer was formed by $HCl/H_2O_2$, $H_2SO_4/H_2O_2$ and $HNO_3$, respectively. 20nm $Al_2O_3$ layer on $SiO_2/Si$ was deposited by PA-ALD. This $Al_2O_3/SiO_2/Si(100)$ interface were characterized by capacitance-voltage characteristics and quasi-steady-state photoconductance decay method.

• Journal of the Korean Chemical Society
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• v.31 no.4
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• pp.359-363
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• 1987

Sonic waves (50KHz) was accelerated the oxidation reaction of primary, benzyl and secondary alcohol with $BaMnO_4\;and\;KMnO_4-CuSO_4{\cdot}5H_2O$ to give the corresponding aldehyde and ketone at $30^{\circ}C/1$ atm. in high yields compared to stirring or refluxing condition.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.444-446
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• 1999

The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

• Journal of Environmental Health Sciences
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• v.12 no.1
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• pp.1-14
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• 1986

This investigation was carried out on the study of Ferrite formation by aerial oxidation of Fe $(OH)_2$ suspension of aqueous solution containing heavy metal ions. In this study the optimum reactionary condition of the Ferrite formation in Batch reactor wa studied by aerial oxidation which are subjected to various reaction time and temperature, under the different kinds of R(2NaOH/$FeSO_4$) Values, pH, Air flow rate, and $Fe^2+/M^2+$ mole ratio. The optimum condition for the Ferrite formation in Batch reactor was such that residence Time was 90 min., Temperature $65{\circ}$C, pH 11.0, Air flow rate 2.0l/min and $Fe^{2+}/M^{2+}$ mole ratio 4.0, which was observed by X-Ray diffraction analysis. The relation R-value, pH and ORP affecting the formation of Ferrite is that the jump step in pH 11.0, when a amount of NaOH is added, is steady state to the formation of Ferrite. Effect of R-value of $FeSO_4$ and $FeCl_2$ on the formation of Ferrite in different from each other the optimum condition of the in different from each other the optimum condition of the $FeCl_2$ is R-value 0.7, pH 11.0 and the $FeSO_4$ R-value 1.2, pH 11.0.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.2
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• pp.223-230
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• 2011

An electrolytic oxidation process was applied to remove odorous compounds from non-point odor sources including wastewater pipelines and manholes. In this study, a distance between the anode and the cathode of the electrolytic process was varied as a system operating parameters, and its effects on odor removal efficiencies and reaction characteristics were investigated. Odor precursors such as sediment organic matters and reduced sulfur/nitrogen compounds were effectively oxidized in the electrolytic process, and a change in oxidation-reduction potential (ORP) indicated that an stringent anaerobic condition shifted to a mild anoxic condition rapidly. At an electrode distance of 1 cm and an applied voltage of 30 V, a system current was maintained at 1 A, and the current density was 23.1 $mA/cm^{2}$. Under the condition, the removal efficiency of hydrogen sulfide in gas phase was found to be 100%, and 93% of ammonium ion was removed from the liquid phase during the 120 minute operating period. Moreover, the sulfate ion (${SO_4}^{2-}$) concentration increased about three times from its initial value due to the active oxidation. As the specific power consumption (i.e., the energy input normalized by the effective volume) increased, the oxidation progressed rapidly, however, the oxidation rate was varied depending on target compounds. Consequently, a threshold power consumption for each odorous compound needs to be experimentally determined for an effective application of the electrolytic oxidation.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.76.2-76.2
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• 2010

질산 용액을 이용한 처리를 통해서 실리콘 웨이퍼 위에 누설 전류가 thermal oxidation 방법과 비슷한 수준의 얇은 실리콘 산화막을 형성할 수 있다. 이러한 처리 방법은 thermal oxidation에 비해서 낮은 온도에서 공정이 가능하다는 장점을 가진다. 이 때 질산 용액으로 68 wt% $HNO_3$을 쓰는데, 이 용액에만 넣었을 때에는 실리콘 산화막이 어느 정도 두께 이상은 성장하지 않는 단점이 있다. 그렇기 때문에 실리콘 웨이퍼를 68 wt% $HNO_3$에 넣기 전에 seed layer 산화막을 형성 시킨다. 본 연구에서는 p-type 웨이퍼를 phosphorus로 도핑해서 에미터를 형성 시킨 후에 seed layer를 형성 시키고 68 wt% $HNO_3$를 이용해서 에미터 위의 실리콘 산화막을 성장 시켰다. 이 때 보다 더 효과적인 seed layer를 형성 시키는 용액을 찾아서 실험하였다. 40 wt% $HNO_3$, $H_2SO_4-H_2O_2$, HCl-$H_2O_2$ 용액에 웨이퍼를 10분 동안 담그는 것을 통해서 seed layer를 형성하고, 이를 $121^{\circ}C$인 68 wt% $HNO_3$에 넣어서 실리콘 산화막을 성장시켰다. 이렇게 형성된 실리콘 산화막의 특성은 엘립소미터, I-V 측정 장치, QSSPC를 통해서 알아보았다.

• Journal of Life Science
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• v.9 no.2
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• pp.57-61
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• 1999

This study was designed to develope the antioxidative activity on oxidation of human low density lipoprotein(LDL) from marine microbials. Bacillus KS-96 producign antioxidant have been isolated and identified from seawater, Bacillus sp. KS-96. The optimal medium pH was 7.0 and incubation temperature was 30$^{\circ}C$. The antiosidant of potential substance produced extracellularly in the culture broth by Bacillus sp. KS-96 was obtained by elution of silica gel culumn chromatography with hexane, ethylacetate and water. The ethylacetate faction are shown at highest level of antioxidant activity using thiocyanate method among them. By IR, NMR, and GC/MS, antioxidant purified from ehtylacetate fraction was identified and named as 2,6-dimethoxyphenol. 2,6-dimethoxyphenol inhibited the metal mediated oxidation of human LDL at concentration of 50∼100 ${\mu}$g/mL in the presence of 5uM CuSO4 with macrophage or J774 cells.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.33-35
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• 2011

Films of CrAlN and CrZrN were deposited on a steel substrate by closed field unbalanced magnetron sputtering, and their oxidation behaviors were investigated. CrAlN films consisted of dense, polycrystalline CrN and AlN fine columns. The formed oxides consisted primarily of crystalline $Cr_2O_3$ incorporated with $Al_2O_3$. The oxide layers were thin and compact so as to make CrAlN films more protective than CrN films. In case of CrZrN films, Zr atoms were dissolved in the CrN phase. Zr atoms advantageously refined the columnar structure, reduced the surface roughness, and increased the micro-hardness. However, the addition of Zr did not increased oxidation resistance, mainly because Zr was not a protective element. All the deposited films displayed relatively good oxidation resistance, owing to the formation of the highly protective $Cr_2O_3$ on their surface. The $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films oxidized to $Cr_2O_3$ as the major phase and ${\alpha}-ZrO_2$ as the minor one, whereas the CrN film oxidized to $Cr_2O_3$.