• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.117-123
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• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.224-226
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• 2007

Hydrothermal 방법에 의해 준비된 $SnO_{2}$ 나노구조의 Pt의 구조적 특징을 알아보기 위해 X-ray diffraction (XRD), transmission electron microscopy (TEM) 을 통해서 확인할 수 있었다. 그리고 $Pt/SnO_{2}$ 나노구조 촉매의 cyclic voltammogram(CV) 통해서 전기화학적 특정을 알아보았다. XRD와 TEM 결과를 통해서 $SnO_{2}$의 나노결정성 입자의 크기는 121 nm임을 확인할 수 있었고 작은 입자가 서로 뭉쳐지면서 핵을 형성한 후 입자의 크기가 점차 증가한다는 것을 알 수 있었다. 그리고 Pt 촉매의 나노결정성 입자의 크기는 4 nm로 확인하였다. 또한 $SnO_{2}$에 Pt촉매의 결정성 입자의 구성이 잘 형성되었음을 확인하였고, 전기화학적 분석을 통해서는 에탄올 산화환원반응과 다결정 Pt의 존재를 확인하였다. 특히 에탄올에 대한 산화반응의 특성을 보이며, 이는 $SnO_{2}$의 에탄올산화반응용 지지체로써의 가능성을 의미한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.276-283
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• 1997

A dry impregnation method was used for preparing pellet type Pt/$SnO_2$ gas sensor. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with electron diffraction analysis, transmission electron microscopy, scanning electron microscopy. The characterization indicates that when Pt/$SnO_2$ sample is calcined at $400^{\circ}C$, the Cl content associated with the Pt phase diminishes and the part of Pt is moved into $SnO_2$ support. This results in the enhancement of gas sensitivity. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30 sccm (a mixture of 0.5% $H_2$ in $_N2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. This indicates that the surface state was saturated. For the 14 ppm $H_2$ gas, the sensitivity of Pt/$SnO_2$ devices was about 81% at an operating temperature of $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.37-44
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• 1995

A coprecipitation method was used for preparing Ca and Pt doped $SnO_{2}$-based material. Crystallite size and specific surface area were investigated by TEM, XRD and BET analysis. $SnO_{2}(Ca)/Pt$ based thick film devices were prepared by a screen printing technique for hydrocarbon gas detecting. Then the electrical and sensing characteristics of devices were investigated. As Ca and Pt addition, the crystal growth of $SnO_{2}$ was suppressed during calcining and sintering, and the sensitivity of $SnO_{2}(Ca)/Pt$ thick film to gas was enhanced. Also any difference in the sensing properties has to be attributed to the Pt and Au electrode. For the 2000 ppm $CH_{4}$, the sensitivity of $SnO_{2}(Ca)/Pt$ thick film devices were about 83% at an operating temperature of $400^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1410-1412
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• 2003

PTC 자기발열기판을 사용해서 저전력 방폭형 CO센서를 제작하고 그 특성을 고찰하였다. CO가스센서의 감지특성을 향상시키기 위하여 Pt가 island 형상을 갖는 다층 Pt/$SnO_2$ 박막구조를 도입하였으며, 이와 같은 구조는 Pt/$SnO_2$ 위에 다시 $SnO_2$ 및 Pt cluster 층들을 연속적으로 증착함으로서 제작되었다. 200ppm의 CO가스농도에서 측정된 다층 $Pt/SnO_2$박막 센서의 감도는 1.72($R_{air}/R_{CO}$)로, 단충 Pt/$SnO_2$ 박막 센서의 최대감도(1.23)보다 훨씬 더 높았다 이것은 Pt와 $SnO_2$사이의 계면적 증대에 기인하는 것으로 생각된다. 제작된 Pt/$SnO_2$ 가스센서의 평균 소비전력은 38.5mW이며, 측정농도범위($30{\sim}1,000ppm$)에서 매우 양호한 감지특성을 나타내었다.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.38-43
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• 1996

A coprecipitation method was used for preparing Ca and Pt doped $SnO_2$ fine powder. Components of the powder were investigated by XPS and SIMS. Crystallite size and specific surface area were investigated by TEM, XRD, and BET analysis. $SnO_2$(Ca)/Pt based thick film devices were prepared by a screen printing technique for methane gas detection. Then sensing characteristics of the devices were investigated. As Ca and Pt added, the crystal growth of $SnO_2$ was suppressed during calcining and sintering, and the sensitivity of $SnO_2$(Ca)/Pt thick film to methane gas was enhanced. For the Pt doped $SnO_2$ fine particle, the thick film device shows sensitivity of about 83% to 2000 ppm methane gas at an operating temperature of >$400^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1304-1307
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• 1997

A hydrogen gas sensor utilizing Pt/$SnO_2$ system was fabricated by the pressed pellet method. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with Electron Diffraction Analysis, Transmission Electron Microscopy, Scanning Electron Microscopy. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30sccm (a mixture of $0.5%H_2$ in $N_2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. $H_2$ gas sensing properties of Pt/$SnO_2$ were investigated at several temperatures. As a result, it was observed that Pt/$SnO_2$ has high sensitivity at $300^{\circ}C$ and $400^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.83-86
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• 2004

A high temperature tolerant microelectronic-based carbon monioxde(CO) gas sensor has been developed. The gas sensing performance has been studied over a wide temperature range$(100-300^\circ{C)}$. The gas sensitivity of the sensor is high, its initial sensing behavior is very fast, and the sensor is reproducible. Pt-SiC and $Pt-SnO_2-SiC$ diodes are fabricated using standard semiconductor processes and their CO gas-sensing behaviors are analyzed as a function of CO gas concentration and temperature by I-V and $\Delta{I-t}$ methods under steady-state and transient conditions. The sensitivity of the device with $Pt-SnO_2$ catalytic gate is higher than that of the Pt gate. The experimental results indicate that $SnO_2$ layer improves the catalytic reaction of the Pt layer.