• Electrical & Electronic Materials
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• v.5 no.2
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• pp.207-215
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• 1992

본 연구에서 xPb(A $l_{0.5}$N $b_{0.5}$) $O_{3}$-(1-x)Pb(Z $r_{0.52}$ $Ti_{o.48}$) $O_{3}$계의 조성변화에 따른 유전 및 압전특성에 관해 실험한 결과 다음과 같은 결론을 얻었다. PAN의 첨가량이 증가함에 따라 c축은 수축되고 a축은 팽창하여 tetragonality는 감소하였고 grain의 크기와 Curie온도 또한 PAN의 첨가량에 따라 감소하였으나 밀도와 유전상수는 PAN의 양이 5mol%까지 증가하다가 그 이상에서는 감소하는 경향을 보였다. PAN의 첨가량이 증가함에 따라 시편의 비저항은 증가하였고 Kp는 PAN의 양이 5mol%첨가시 60%로 최대치를 보였으나 Qm은 최소치를 나타내었다.다.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.76-84
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• 2011

Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.133-133
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• 1997

• Journal of Conservation Science
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• v.33 no.3
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• pp.215-223
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• 2017

The purpose of this study is to reveal the characteristics, correlations, and colorant materials of those using the chemical compositions of 30 glasses excavated from the Sarari hall of the Mireuksaji stone pagoda, and to determine the correlations between them and other glass excavated from the Wanggungri site. The results of the chemical analysis of the 11 glass beads show that they are a soda glass group with high contents of $SiO_2$ and $Na_2O$; these can be further subdivided into soda-alumina groups ($Na_2O-Al_2O_3-CaO-Si_2O$). The characteristics of the stabilizer are classified as being of the high alumina glass group (LCHA), except for two glasses. It was concluded that colorant materials affected the coloring for glass beads by various components including Ti, Mn, Fe, Cu and Pb. In addition, we examined six lead glasses which are glass plate and unknown fragments that are of a common lead glass system ($PbO-SiO_2$) with respect to the average contents of PbO (70wt.%) and $SiO_2$ (30wt.%). As a result of comparing these relics with those of the glass beads excavated by Wanggungri, there is a similarity in that they belong to the soda glass group. However, the contents of $Na_2O$ are relatively higher than that of the glass beads in the Mireuksaji pagoda, and most of relics include glasses with a low content of $K_2O$ and CaO. In addition, the PbO and $SiO_2$ contents are slightly different in the lead glass. It seems that the glass relics made at two different sites may have used different raw materials or techniques.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.390-395
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• 2011

In order to develope piezoelectric transformer for the ballast of fluorescent lamp, the composition of piezoelectric ceramics was 0.95Pb($Zr_xTi_{1-x}$)O3+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$. PMN compound was selected to improve mechanical quality factor and PSN to prevent the decrease of dielectric constant and electromechanical coupling coefficient. Dielectric and piezoelectric characteristics in the region of MPB of 0.95Pb($Zr_xTi_{1-x}$)$O_3$+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$ ceramics was discussed both quantatively and qualitatively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.466-474
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• 2021

[011] poled ternary Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals have been investigated for active materials for acoustic transducers because of their high piezoelectric properties in both shear and transverse modes. In order to use [011] poled PIN-PMN-PT single crystals for acoustic transducers, the characterization of full-matrix material properties is required. In this study, full sets of compliance, dielectric, and piezoelectric constants of [011] poled rhombohedral PIN-PMN-PT were measured by a resonance method. Dimensions and geometries of 12 samples were proposed for measuring 17 independent material constants of [011] poled rhombohedral PIN-PMN-PT single crystals. Two sets of samples with different PT concentrations, 0.24PIN-0.49PMN-0.27PT and 0.24PIN-0.46PMN-0.30PT, were fabricated and their material properties were measured. Measured impedance spectra and simulated impedance spectra of the samples were compared to check the accuracy of the measurements.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.257-260
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• 2003

In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.942-952
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• 1996

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.42-48
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• 1998

Synthesis of PLT($Pb_{1-X}La_{2X/3}TiO_3$, x=0.1~0.3) powders was carried out by hydrothermal method. Optimal conditions for synthesis were $250^{\circ}C$ of reaction temperature, 8M-KOH solution of hydrothermal solvent and 12 hrs reaction time, and the monolithic $Pb_{1-X}La_{2X/3}TiO_3$ particles were obtained with the composition of x$\leq$0.2. The tetragonality(c/a) and the phase transition temperature were decreased by the increment of the $La_2O_3$ contents in PLT solid solutions, and the Curie temperature of the $Pb_{1-X}La_{2X/3}TiO_3$(x=0.2) was $400^{\circ}C$. The shape of the synthesized particles were nearly spherical and the size was in the 20~200 nm range.