• Korean Journal of Materials Research
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• v.12 no.5
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.3
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• pp.345-353
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• 2022

This study aimed to fundamentally understand changes of cell parameters of cation-exchanged mordenites using high resolution X-ray powder diffraction for studies that immobilization of various heavy metal cation using synthesis mordenite (Na_6.6Al_6.6Si_41.4O₉₆·20.4H₂O, Na-MOR). As a results of measurement by Thermogravimetric analysis (TGA), it was confirmed that 19.4, 20.4 water molecules per unit cell were present in monovalent-cation substituted MOR (Cs-MOR, Na-MOR), and 21, 23.1, 23.2 water molecules per unit cell were present in divalent-cation substituted MOR (Pb-MOR, Sr-MOR, Cd-MOR). The space group of all the samples were identified as Cmcm belonging to the orthorhombic crystal system. Compared to Na-MOR, starting material, relative peak intensity of (110) and (200) is significantly changed after cation substitution whereas peak position is almost similar. Also, (220) peak that was not found in Na-MOR was clearly observed in Pb-, Cd- and Sr-exchanged MOR. Thus, it was estimated that changes of atomic distribution usually occurred on ab-plane while changes of cell parameters were little. Detailed changes in the cell parameters of cation-exchanged mordenites were derived from whole profile fitting method using the GSAS suite program. Changes in the axial lengths and unit cell volume of cation substitution showed different relationship depending on ionic radius and charge number. In case of monovalent-cation substituted MOR, the length of a-axis increases whereas the length of b- and c-axis decrease by absorbed cation radius. In the case of divalent-cation exchanged MOR, the length of a-axis usually decreases while the length of b- and c-axis increases by cation radius. It was confirmed that unit cell volume of monovalent and divalent cation substituted MORs had an independent tendency by cation radius.