• 제목/요약/키워드: $Pb(Zr,Ti)O_3$

검색결과 747건 처리시간 0.027초

NiO 첨가 $Pb(Zr_{0.525} Ti_{0.475})O_3$ 세라믹스의 치밀화의 고용한계 (Solid Solution Limit and Densification of NiO Doped $Pb(Zr_{0.525} Ti_{0.475})O_3$)

  • 위성권;김호기
    • 한국세라믹학회지
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    • 제23권6호
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    • pp.52-58
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    • 1986

  • $Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

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$xPb(Al_{2/3}W_{1/3})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$계의 유전 및 압전특성 (Dielectric and Piezoelectric Properties of $xPb(Al_{2/3}W_{1/3})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ Ceramics System)

  • 윤석진;김현재;정형진
    • 한국세라믹학회지
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    • 제30권1호
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    • pp.1-6
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    • 1993

  • Dielectric and piezoelectric porperties of pseudoternary xPb(Al2/3W1/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 (x=1~10mol%) ceramic system have been investigated as a function of the amount of PAW[Pb(Al2/3W1/3)O3] and sintered from 110$0^{\circ}C$ to 120$0^{\circ}C$ for 1hr. As the amount of PAW increases, the c/a of tetragonal structure decreases. The grain size was reduced with increasing the amount of PAW addition. However, the density, dielectric constant and electromechanical coupling factor(kp) exhibited a maximum value at the amount of 5mol% PAW addition.

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PZT 박막 캐퍼시터의 특성에 기여하는 PZT-전극계면층의 영향 (Effects of PZT-Electrode Interface Layers on Capacitor Properties)

  • 김태호;구준모;민형섭;이인섭;김지영
    • 한국재료학회지
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    • 제10권10호
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    • pp.684-690
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    • 2000

  • Metal-Ferroelectric-Metal(MFM) 구조의 개퍼시터에서 $Pb(Zr,Ti)O_3(PZT)$-전극 계면층이 PZT 박막 특성에 기여하는 영향을 알아보기 위하여 Pt/PZT/계면층/Pt/$TiO_2/SiO_2$/Si 구조의 캐퍼시터를 제작하였다. 계면층으로 사용될 물질들 중에서 $PbTiO_3(PT)$ 층을 sol-gel 방법으로 형성하였으며, PbO, $ZrO_2,\;TiO_2$ 층들을 reactive sputtering 방법으로 형성하였다. PZT박막을 구성하는 원소들로 이루어진 단순 산화물들의 특성을 평가하기 위하여 PbO, $ZrO_2,\;TiO_2$를 계면층으로 사용하여 $600^{\circ}C$에서 열처리를 실시하였고, 이 경우에는 $TiO_2$가 가장 우수하게 PZT의 결정립 크기를 미세하게 하는 효과를 보였으나, 두께가 증가함에 따라 표면 거칠기가 증가하고 anatase 상으로 남기 때문에 강유전특성이 열화되었다. 반면에 PT 박막을 계면층으로 사용한 경우에는 결정립 크기의 감소와 더불어 전기적인 특성도 향상되었다. 또한 PZT의 핵생성 위치를 판단하기 위하여 PT 삽입층의 위치를 변화하며, 실험한 결과, 하부전극과 PZT 박막의 계면에 PT 삽입층을 형성하였을 경우에 가장 효과적인 seed로서의 역할을 하였다.

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Epitaxial Growth of Pb(Zr, Ti)$O_3$Thin Films on $LaAlO_3$ Substrates by Dipping-Pyrolysis Process

  • Hwang, Kyu-Seog;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • 제3권4호
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    • pp.253-256
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    • 1997

  • Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.

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