• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.681-687
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• 2008

The sintering and electrical properties of the hydrothermal PSZT powders obtained by substituting 4, 6 and 8mol% Sr for Pb in PZT lattice structure were investigated. The lattice constant and particle size decreased in proportion to a quantity of Sr. The sintering properties of PSZT powders showed $7.754g/cm^3$ of sintered density and $4{\mu}m$ of grain size at sintering temperature of $1250^{\circ}C$. Curie temperature lowered gradually from $363.6^{\circ}C\;to\;319.2^{\circ}C$ and relative dielectric constants increased rapidly by a quantity of Sr. In comparison to PZT, moreover, the quality factor of PSZT was increased more than three times with increase of Sr mole ratio, and piezoelectric constant $(d_{31}\;and\;g_{31})$ was decreased. It was found that dielectric loss of PSZT was decreased by 0.574% which was half of PZT.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.45-51
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• 2005

We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.213-216
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• 1991

In this study, PZT powder was synthesized by coprecipitation method us ing $Pb(NO_3)2$, $ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$ as starting raw materials. Homogeneous and fine-grained PZT powder was obtained by the coprecipitation method. PZT powder was characterized by DTA, SEM and XRD analysis. The XRD peaks were observed at $600(^{\circ}C)$ and over.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1456-1457
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• 2008

본 논문에서는 박막 PZT(Pb(Zr,Ti)O3)를 이용한 d33모드의 자가 발전 소자를 설계 및 제작 하였다. 자가 발전 소자는 진동 에너지를 압전 현상을 통해 전기 에너지로 변환하는 소자로서, 제안한 구조는 단일 외팔보가 아닌 20개 이상의 외팔보를 원형으로 집적한 구조를 갖기 때문에, 기존의 단일 외팔보 위주의 자가발전 소자보다 출력 전력이 우수하다. 자가 발전 소자의 성능 최적화를 위해 유한요소기법(FEM)을 통해 기계적 특성을 분석하였으며, 마이크로 머시닝 기법을 이용하여 초박형의 자가 발전 소자를 제작할 수 있었다. 제작된 자가발전 소자는 $1.2mm\times1.2mm\times0.5mm$ (높이)의 크기를 갖는다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.196-196
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• 2009

$Pb_1(Zr_x,\;Ti_{1-x})O_3$ (PZT)는 강유전체 기억소자(FRAM)와 초고감도 압전센서 등 다방면의 활용성으로 인해 신뢰성 높은 박막을 제조하기 위한 많은 연구가 진행되고 있다. 본 연구에서는 RF-magnetron Sputtering System을 이용하여 mono-layer PZT박막과 Bi-layer PZT박막을 제조하여 각 sample의 전기적 특성을 비교 하였으며, 그 결과 Bi-layer PZT박막이 더 우수한 전기적 특성을 확인하였다.