• Economic and Environmental Geology
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• v.42 no.3
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• pp.177-193
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• 2009

The Samgwang deposit consists of eight massive mesothermal quartz veins that filled NE and NW-striking fractures along fault zones in Precambrian granitic gneiss of the Gyeonggi massif. The mineralogy and paragenesis of the veins allow two separate discrete mineralization episodes(stage I=quartz and calcite stage, stage II-calcite stage) to be recognized, temporally separated by a major faulting event. The ore minerals are contained within quartz and calcite associated with fracturing and healing of veins that occurred during both mineralization episodes. The hydrothermal alteration of stage I is sericitization, chloritization, carbonitization, pyritization, silicification and argillization. Sericitic zone occurs near and at quartz vein and include mainly sericite, quartz, and minor illite, carbonates and chlorite. Chloritic zone occurs far from quartz vein and is composed of mainly chlorite, quartz and minor sericite, carbonates and epidote. Fe/(Fe+Mg) ratios of sericite and chlorite range 0.45 to 0.50(0.48$\pm$0.02) and 0.74 to 0.81(0.77$\pm$0.03), and belong to muscovite-petzite series and brunsvigite, respectiveIy. Calculated $Al_{IV}$-FE/(FE+Mg) diagrams of sericite and chlorite suggest that this can be a reliable indicator of alteration temperature in Au-Ag deposits. Calculated activities of chlorite end member are $a3(Fe_5Al_2Si_3O_{10}(OH)_6$=0.0275${\sim}$0.0413, $a2(Mg_5Al_2Si_3O_{10}(OH)_6$=1.18E-10${\sim}$7.79E-7, $a1(Mg_6Si_4O_{10}(OH)_6$=4.92E-10${\sim}$9.29E-7. It suggest that chlorite from the Samgwang deposit is iron-rich chlorite formed due to decreasing temperature from high temperature(T>450$^{\circ}C$). Calculated ${\alpha}Na^+$, ${\alpha}K^+$, ${\alpha}Ca^{2+}$, ${\alpha}Mg^{2+}$ and pH values during wallrock alteration are 0.0476($400^{\circ}C$), 0.0863($350^{\circ}C$), 0.0154($400^{\circ}C$), 0.0231($350^{\circ}C$), 2.42E-11($400^{\circ}C$), 7.07E-10($350^{\circ}C$), 1.59E-12($400^{\circ}C$), 1.77E-11($350^{\circ}C$), 5.4${\sim}$6.4($400^{\circ}C$), 5.3${\sim}$5.7($350^{\circ}C$)respectively. Gain elements(enrichment elements) during wallrock alteration are $TiO_2$, $Fe_2O_3(T)$,CaO, MnO, MgO, As, Ag, Cu, Zn, Ni, Co, W, V, Br, Cs, Rb, Sc, Bi, Nb, Sb, Se, Sn and Lu. Elements(Ag, As, Zn, Sc, Sb, Rb, S, $CO_2$) represents a potential tools for exploration in mesothermal and epithermal gold-silver deposits.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Microbiology and Biotechnology Letters
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• v.32 no.4
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• pp.366-370
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• 2004

Four chitinase producing bacteria, Arthrobacter nicotinae CH4, Arthrobacter nicotinae CHI3, Arthrobacter sp. CH5 and Micrococcus sp. CH3, were isolated from small crabs and shrimps. We investigated the optimum medium condition for the production of enzyme and high cell mass. The preferable medium composition was as follows: colchitin 0.1 %(w/v), glycerol 0.25%(w/v) and yeast extract 0.05%(w/v) in minimal midium ($K_{2}HPO_{4}$ 0.7 g/l, $KH_{2}PO_{4}$ 0.3 g/l, $MgSO_{4}{\cdot}5H_{2}O$ 0.5 g/l, $FeSO_{4}}{\cdot}7H_{2}O$ 0.01 g/l, $ZnSO_{4}$ 0.001 g/l, $MnCI_2$ 0.001 g/l, pH 7.0). This cell culture medium could be used directly as sample for measuring chitinase activity. Because it hardly conreducing sugar such as glucose (blank value=0), the detected reducing sugar can be considered as a chitinase reaction product. The results can be used for easy preparation method for determination of enzyme activity and analysis of enzyme-substrate reaction in step of screening of chitinase producing bacteria.

• Microbiology and Biotechnology Letters
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• v.17 no.4
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• pp.392-396
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• 1989

Methylobacterium organophilum, a facultative methylotroph was cultivated on a methanol as a sole carbon and energy source. The cell growth was affected by the various components of minimal synthetic medium and the medium composition was optimized with 0.5% (v/v) methanol at pH 6.8 and at 3$0^{\circ}C$. The maximum specific growth rate of M. organophilum was achieved to 0.26 hr$^{-1}$ in the optimized medium which has following composition: Methanol, 0.5% (v/v):(NH$_4$)$_2$SO$_4$, 1.0g/l:KH$_2$PO$_4$, 2.13g/l:KH$_2$PO$_4$, 1.305g/ι:MgSO$_4$.7$H_2O$. 45g/l and trace elements (CaCl$_2$.2$H_2O$, 3.3mg:FeSO$_4$.7$H_2O$, 1.3mg:MnSO$_4$.4$H_2O$, 130$\mu\textrm{g}$:ZnSO$_4$.5$H_2O$, 40$\mu\textrm{g}$:Na$_2$MoO$_4$.2$H_2O$, 40$\mu\textrm{g}$:CoCl$_2$.6$H_2O$, 40$\mu\textrm{g}$:H$_3$BO$_3$, 30$\mu\textrm{g}$ per liter). By the limitation of nitrogen and deficiency of Mn$^{+2}$ or Fe$^{+2}$, the cell growth was significantly repressed. Methanol greatly repressed the cell growth and the complete inhibition was observed at concentration above 4% (v/v). In order to overcome the methanol inhibition and to prevent the methanol limitation, intermittent feeding of methanol was conducted by a D.O.-stat technique. PHB production by M. organophilum was stimulated by deficiency of nutrients such as NH$_{4}^{+}$, SO$_{4}^{-2}$, $Mg^{+2}$, $K^{+}$, or PO$_{4}^{-3}$ in the medium. The maximum PHB content was obtained as 58% of dry cell weight under deficiency of potassium ion in the optimized synthetic medium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.869-874
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• 2010

Magnetoelectric composites with compositions (1-x)[0.5PZT-0.25PNN-0.25PZN](ferroelectric) - x[$(Ni_{0.9}Zn_{0.1})Fe_2O_4$](ferrite) in which x varies as 0, 0.1, 0.2, 0.4, 0.6, 0.8, 1.0 were prepared by conventional ceramic process. The presence of two phases (ferroelectric phase with large grain and ferrite phase with small grain) in the particulate ceramic composites was confirmed by XRD, SEM and EDX. The ferroelectric and magnetic properties of the composites were studied by measuring the P-E and M-H hysterisis loop on the composite composition (x=0, 0.1, 0.2, 1), they were strongly affects of the phase content in composite. The magnetoelectric votage was measured as a function of DC magnetic field and the maximum magnetoelectric voltage coefficient of 14 mV/cm Oe was observed in x=0.2(80 mol% ferroelectric and 20 mol% ferrite phase).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.101-105
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• 1994

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.256-256
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• 2016

기존의 디스플레이 기슬은 마스크를 통해 특정 부분에만 유기재료를 증착시키는 방법을 사용하였으나, 기판의 크기가 커짐에 따라 공정조건에 제약이 발생하였다. 이를 해결하기 위해 최근 용액 공정에 대한 연구가 활발히 진행되고 있다. 용액 공정은 기존 진공 증착 방식과 비교하였을 때 상온, 대기압에서 증착이 가능하며 경제적이고, 대면적 균일 증착에 유리하다는 장점이 있다. 반면, 용액 공정으로 제작한 소자는 시간이 지남에 따라 점차 전기적 특성이 변하는 aging effect를 보인다. Aging effect는 용액에 포함된 C기와 OH기 기반의 불순물의 영향으로 시간의 경과에 따라서 문턱전압, subthreshold swing 및 mobility 등의 전기적 특성이 변하는 현상으로 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 지금까지 고품질 박막 형성을 위한 열처리는 퍼니스 (furnace) 장비에서 주로 이루어졌는데, 시간이 오래 걸리고, 상대적으로 고온 공정이기 때문에 유리, 종이, 플라스틱과 같은 다양한 기판에 적용하기 어렵다는 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 저온에서도 열처리가 가능한 microwave irradiation (MWI) 방법을 이용하여 solution-processed InGaZnO TFT를 제작하였고, 기존의 열처리 방식인 furnace로 열처리한 TFT 소자와 aging effect를 비교하였다. 먼저, solution-processed IGZO TFT를 제작하기 위해 p type Si 기판을 열산화시켜서 100 nm의 SiO2 게이트 산화막을 성장시켰고, 스핀코팅 방법으로 a-IGZO 채널층을 형성하였다. 증착후 열처리를 위하여 1000 W의 마이크로웨이브 출력으로 15분간 MWI를 실시하여 a-IGZO TFT를 제작하였고, 비교를 위하여 furnace N2 gas 분위기에서 $600^{\circ}C$로 30분간 열처리한 TFT를 준비하였다. 제작된 직후의 TFT 특성을 평가한 결과, MWI 열처리한 소자가 퍼니스 열처리한 소자보다 높은 이동도, 낮은 subthreshold swing (SS)과 히스테리시스 전압을 가지는 것을 확인하였다. 한편, aging effect를 평가하기 위하여 제작 후에 30일 동안의 특성변화를 측정한 결과, MWI 열처리 소자는 30일 동안 문턱치 전압(VTH)의 변화량 ${\Delta}VTH=3.18[V]$ 변화되었지만, furnace 열처리 소자는 ${\Delta}VTH=8.56[V]$로 큰 변화가 있었다. 다음으로 SS의 변화량은 MWI 열처리 소자가 ${\Delta}SS=106.85[mV/dec]$인 반면에 퍼니스 열처리 소자는 ${\Delta}SS=299.2[mV/dec]$이었다. 그리고 전하 트래핑에 의해서 발생하는 게이트 히스테리시스 전압의 변화량은 MWI 열처리 소자에서 ${\Delta}V=0.5[V]$이었지만, 퍼니스 열처리 소자에서 ${\Delta}V=5.8[V]$의 큰 수치를 보였다. 결과적으로 MWI 열처리 방식이 퍼니스 열처리 방식보다 소자의 성능이 우수할 뿐만 아니라 aging effect가 개선된 것을 확인할 수 있었고 차세대 디스플레이 공정에 있어서 전기적, 화학적 특성을 개선하는데 기여할 것으로 기대된다.

• Korean Journal of Microbiology
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• v.32 no.1
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• pp.78-83
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• 1994

Membrane-bound alcohol dehydrogenase(ADH) was purified to homogeneous state fron an acetic acid producing bacteria, Acetobacter sp. HA. The enzyme was purified about 153-fold with an overall yield of 35% from the crude cell extract by solubilization and extraction of the enzyme with Triton X-100 and subsequent fractions by column chromatography. Upon sodium dodecyl sulphate-PAGE, the enzyme showed the presence of three subunits with a molecular mass of 79,000 daltons, 49,000, and 45,000 daltons, respectively. Absorption oxidized aliphatic alcohols with a straight carbon chain except for methanol. Formaldehyde, acetaldehyde and glutaraldehyde were also oxidizable substrates. The apparent $K_m$ for ethanol was 1.38mM. The optimun pH and temperature were 5.0~6.0 and 32${\circ}C$, respectively. $V_2O_5$ and heavy metals such as $ZnCl_2\;and\; NiCl_2$ were inhibitory to the enzyme activity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.206-210
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• 1997

In the fields of the optics, precise machine, semiconductors, the micro-positioning actuators are required for the control of position in the submicron range. PNN-P2N-PZT ceramics were fabricated with various mole ratio of the PZT[Pb(Zr$_{1}$2//Ti$_{1}$2)O$_3$]. PNN (Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$]and PZN[Pb(Zn$_{1}$3//Nb/sbu 2/3/)O$_3$] powders prepared by double calcination and PZT powders prepared by molten- salt synthesis method. The relative permittivity of specimen with PZT 0.3 mole ratio was shown 5,320 and appeared the relaxor ferroelectric feature. The maximum Piezoelectric coefficient d$_{31}$ to be used for evaluation the displacement of piezoceramics in PNN-PZN-PZT ceramics was 324$\times$10$^{-12}$ (C/V) at the vicinity of morphotropic phase boundary and was larger than that of solid PZT ceramics(120$\times$10$^{-12}$ C/V).