• 센서학회지
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• 제5권2호
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• pp.21-27
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• 1996

부탄가스 감지를 위해 $WO_{3}$를 기본물질로 하고 산화물을 첨가제로 한 후막형 가스감지 소자를 스크린 프린팅법으로 제조하였고 가스에 대한 감도특성 등을 조사하였다. 첨가 산화물중 $TiO_{2}$를 첨가한 $WO_{3}$ 후막의 부탄가스에 대한 감도가 다른 첨가물을 적용한 후막의 감도보다 상대적으로 높음을 알 수 있었고, $TiO_{2}$의 첨가량이 2wt.%일 때 가장 높은 감도를 나타냄을 알 수 있었다. 열처리 온도를 $900^{\circ}C$까지 변화시켜 보았는데 $650^{\circ}C$일 때 가장 좋은 감도를 나타냈으며, 동작온도를 $400^{\circ}C$까지 변화시켰을 때 $350^{\circ}C$에서 가장 좋은 감도를 가짐을 알 수 있었다. $WO_{3}$에 $TiO_{2}$를 2wt.% 첨가하고, $650^{\circ}C$에서 열처리한 후막의 동작온도 $350^{\circ}C$에서 공기중 20000ppm의 부탄가스에 대해 80%의 감도를 나타내었다.

• 한국안전학회지
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• 제4권1호
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• pp.71-74
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• 1989

The $\alpha$-Fe$_2$O$_3$ gas sensor, prepared by the precipitation of Fe(OH)$_3$ from a solution of iron(III) sulfate and tin (IV) chloride, was composed of fine particles and was superior in sensitivity to other $\alpha$-Fe$_2$O$_3$. The gas sensitivity was found to depend on the amounts of remaining sulfate ion the microstructure and a small amount of iron(II) species generated through the reduction of $\alpha$-Fe$_2$O$_3$. The sensing mechanism of $\alpha$-Fe$_2$O$_3$gas sensor was confirmed to be due to the reduction of $\alpha$-Fe$_2$O$_3$ to the low resistive Fe$_3$-xO$_4$ by combustible gas and to depend on the crystral structure.

• 한국재료학회지
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• 제22권7호
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• 대한전기학회논문지
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• 제43권7호
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• pp.1144-1151
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• 1994

The humidity-sensitive specimens-(BaS11T-S1xTCaS1xT)TiOS13T, x=0, 0.1, 0.2, 0.3, 0.4, 0.5-were fabricated by a solid-state reaction method which is easy in process control of microstructure and good in mass production, and their humidity-sensitive characteristics were examined. Ca inhibits grain growth and the open porosity increases with Ca substitution, and the specimens at x=0.5 show the best humidity sensitivity. Their humidity sensitivity is higher at the lower frequencies, and drift phenomenon in humidity sensitivity is exhibted with aging in the air, which disappears by a heat treatment. The electrical conduction with water adsorption is dominated by the ions, and the activation energy decreases with increasing relative humidity.

• 전기학회논문지P
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• 제62권2호
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• pp.95-97
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• 2013

$CaTiO_3$ thin films using silk screen printing technology were fabricated and their humidity sensitive characteristics have been investigated. The specimens were sintered at $1000^{\circ}C$, $1050^{\circ}C$, $1100^{\circ}C$ for 1 hour and the best humidity sensitivity was shown in the specimens sintered at $1000^{\circ}C$. The humidity sensitivity decreased with increasing measuring frequencies and was stable at different abient temperatures. Hysteresis of impedance variation with increasing and decreasing relative humidity were negligible.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1753-1755
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• 1999

$LaCoO_3$ thick-film sensors were fabricated on alumina substrate by screen printing method. The sensitivity for gases was investigated by varying the heat treatment temperature of the films. X-Ray Diffractions and SEM photographs were used to examine their structural properties. The sensitivity of $LaCoO_3$ thick-film for CO gas was much better than for $C_4H_{10}$, $NH_3$ and NO gases. The best condition of heat treatment was $800^{\circ}C$ and the optimal operating temperature of $LaCoO_3$ thick-film for the highest sensitivity was $150^{\circ}C$. Sensitivities of the $LaCoO_3$ thick-film at 500ppm and l000ppm for CO gas were 72% and 95%, respectively.

• 한국결정성장학회지
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• 제10권2호
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• pp.105-110
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• 2000

APCVD(Atrmos phere Pressure Vapor Deposition)법으로 $\alpha$-$Fa_{2}O_{3}/SnO_{2}$계 박막 가스센서 소자를 제조하여 열처리(Heat treatment)하였으며, 가연성 가스($CH_4$, $H_2$, LPG)에 대하여 감지 특성(Sensitivity)을 측정하였다. 감지특성 향상을 위해 소자를 $400^{\circ}C$, $450^{\circ}C$, $500^{\circ}C$, $550^{\circ}C$, $600^{\circ}C$에서 각각 2시간동안 열처리하였으며 $500^{\circ}C$에서 2시간 동안 열처리하였을 때 가장 우수한 감응도를 조사하였다. 특히 $H_2$에 대하여 가장 민감한 반응을 보였다. 최적의 작동온도를 찾기 위해 $100^{\circ}C$~$300^{\circ}C$으로 변화하며 가스 감응도를 조사하였다. 제작된 소자는 작동온도 $175^{\circ}C$, 측정 범위 500ppm ~ 10,000ppm에서 $H_2$일 경우 감지도가 62%~76%를 가졌으며, $CH_2$의 경우 16%~58%, LPG의 경우 8%~37%이였다. 또한 열처리한 것과 안한 것의 감응도의 차이는 약 10%이었다. LPG 1,000ppm에서의 장기안정성은 감응도 30%의 값으로 수렴하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.865-868
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• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• Asian Journal of Atmospheric Environment
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• 제5권2호
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• pp.65-78
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• 2011

Ozone ($O_3$) is a main component of photochemical oxidants, and a phytotoxic anthropogenic air pollutant. In North America and Europe, the current concentration of $O_3$ has been shown to have significant adverse effects on vegetation. In this review, we summarize the experimental studies on the effects of $O_3$ on the growth and photosynthetic activity of Japanese forest tree species to understand the present knowledge and provide sound basis for future research toward the assessment of $O_3$ impacts on Japanese forest ecosystem. Since the 1990s, several Japanese researchers have conducted the experimental studies on the effects of ambient levels of $O_3$ on growth and physiological functions such as net photosynthesis of Japanese forest tree species. Although the sensitivity to $O_3$ of whole-plant growth is quite different among the species, it was suggested that the current ambient levels of $O_3$ in Japan are high enough to adversely affect growth and photosynthetic activity of Japanese forest tree species classified into high $O_3$ sensitivity group such as Japanese beech. The N load to soil has been shown to reduce the sensitivity to $O_3$ of Japanese larch and increase that of Japanese beech. To establish the critical level of $O_3$ for protecting Japanese forest tree species, therefore, it is necessary to take into account the N deposition from the atmosphere. There is little information on the combined effects of $O_3$ and other environmental factors such as elevated $CO_2$ and drought on growth and physiological functions of Japanese forest tree species. Therefore, it is necessary to promote the experimental study and accumulate the information on the combined effects of $O_3$ and any other abiotic environmental factors on Japanese forest tree species.

• 센서학회지
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• 제6권3호
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• pp.200-206
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• 1997

열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로 $SiCl_{2}H_{2}$, $NH_{3}$ 및 $N_{2}O$ 기체를 사용하여 실리콘 옥시나이트라이드($Si_{x}O_{y}N_{z}$) 층을 제작하였다. 세 가지의 다른 조성이 기체 유속비($NH_{3}/N_{2}O$)를 각기 0.2, 0.5 및 2로 변화시키고 $SiCl_{2}H_{2}$의 기체 유속은 고정시킴으로써 얻어졌다. 엘립소메트리와 HFCV(High Frequency Capacitance-Voltage) 측정법을 채택하여 굴절율, 유전율 및 조성의 차이를 각각 조사했다. 실리콘 옥시나이트라이드는 내부에 포함된 실리콘 나이트라이드 성분량에 관계없이 용액 중에서 순수한 실리콘 나이트라이드와 유사한 안정성을 보유했다. 실리콘 옥시나이트라이드 층 알칼리이온 감지성의 크기 순서는 실리콘 나이트라이드 성분량에 영향을 받았다. 보다 나은 알칼리이온 감지성이 실리콘 옥시나이트라이드의 벌크 내에 있는 실리콘 디옥시드의 성분량을 증가시킴으로써 얻어졌다.