• Title/Summary/Keyword: $O_3$ sensitivity

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Electrochemical Properties of Dye-sensitized Solar Cells with Improving the Surface Structure (표면형상 변화에 따른 염료감응 태양전지의 전기화학적 특성)

  • Zhao, Xing Guan;Jin, En Mei;Gu, Hal-Bon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.153-158
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    • 2012
  • We use UV(ultraviolet)-$O_3$ treatment to increase the surface area and porosity of $TiO_2$ films in dye-sensitized solar cells (DSSCs). After the UV-$O_3$ treatment, surface area and porosity of the $TiO_2$ films were increased, the increased porosity lead to amount of dye loading and solar conversion efficiency was improved. Field emission scanning electron microscopy images clearly showed that the nanocrystalline porosity of films were increased by UV-$O_3$ treatment. The Brunauer, Emmett, and Teller surface area of the $TiO_2$ films were increased from $0.71cm^2/g$ to $1.31cm^2/g$ by using UV-$O_3$ treatment for 20 min. Also, UV-$O_3$ treatment of $TiO_2$ films significantly enhanced their solar conversion efficiency. The efficiency of the films without treatment was 4.9%, and was increased to 5.6% by UV-$O_3$ treatment for 20 min. Therefore the process enhanced the solar conversion efficiency of DSSCs, and can be used to develop high sensitivity DSSCs.

Gas Sensitization of Tin Oxide Film by Resistance

  • Chwa, Sang-Ok;Park, Hee-Chan;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.4 no.3
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    • pp.183-188
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    • 1998
  • Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

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Chromel-Alumel Thermoelectric Flow Sensor Fabricated on Dielectric(Si3N4/SiO2/Si3N4) Membrane (유전체(Si3N4/SiO2/Si3N4)멤브레인 위에 제작된 크로멜-알루멜 열전 유량센서)

  • Lee, Hyung-Ju;Kim, Jin-Sup;Kim, Yeo-Hwan;Lee, Jung-Hee;Choi, Yong-Moon;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.12 no.3
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    • pp.103-111
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    • 2003
  • A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.

Fabrication of ZnO thin film gas sensor for detecting $(CH_3)_3N$ gas ($(CH_3)_3N$ 가스 감지용 ZnO 박막 가스 센서의 제조)

  • 신현우;박현수;윤동현;홍형기;권철한;이규정
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.21-26
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    • 1995
  • Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

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Selective Sensing of Carbon Monoxide Gas in CuO banded ZnO Ceramics (CuO띠가 입혀진 ZnO 소결체의 일산화탄소에 대한 선택적 감지 특성)

  • 신병철
    • Journal of the Korean Ceramic Society
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    • v.30 no.10
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    • pp.819-822
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    • 1993
  • The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.

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Improvement of Long-term Stability in $SnO_2$ Based Gas Sensor for Monitoring Offensive Odor

  • Park, Jong-Hun;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.304-308
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    • 2000
  • WO$_3$/SnO$_2$ceramics has been suggested as an effective sensing material for monitoring offensive odor or pollutant gases. This work was focussed on improving long-term stability, which has been a principal problem generally taking place in SnO$_2$semiconductor gas sensor. Miniaturized thick film gas sensors were fabricated by screen printing technique. Two types of sensor materials, W doped SnO$_2$and WO$_3$mixed SnO$_2$, were comparatively investigated on those long-term stability and sensitivites to several gases. Small amount of W doping(0.1 mol%) into SnO$_2$largely improved the long-term stability. The W(0.1 mol%) doped SnO$_2$gas sensor had higher sensitivities to both acetone and alcohol compared with WO$_3$(5 wt%) mixed SnO$_2$gas sensor. On the contrary, WO$_3$(5 wt%) mixed SnO$_2$gas sensor showed more superior sensitivity to cigarette smoke due to larger W content.

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Microstructural Characteristics of Al2O3/Cu Nanocomposites Depending on Fabrication Process (Al2O3/Cu 나노복합체 제조공정에 따른 미세조직 특성)

  • Kang, Kae-Myung;Oh, Sung-Tag
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.59-63
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    • 2003
  • The microstructural characteristics of $Al_2$$O_3$/Cu composites hot-pressed at different temperatures for atmosphere switching from $H_2$to Ar have been studied. When the composite atmosphere was switched at $1000^{\circ}C$ it led to more homogeneous microstructure than when the atmosphere was switched at $1450^{\circ}C$. The strong sensitivity of Cu to atmosphere, especially the oxygen content in the atmosphere, was found to be responsible for the observed change, based upon the interfacial phenomena related to the formation of $CuAlO_2$. The practical implication of these results is that an optimum processing condition for the design of homogeneous microstructure and stable properties can be established.

Developments of Low Frequency Electric Field Sensor using $Ti:LiMbO_3$ Optical Modulator ($Ti:LiMbO_3$ 광변조기를 이용한 저주파 전계센서의 개발)

  • Choi, Young-Kyu
    • Journal of Sensor Science and Technology
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    • v.10 no.4
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    • pp.214-221
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    • 2001
  • The use of an asymmetric Mach-Zehnder interferometric amplitude modulator to measure a relatively low frequency electric field strength is described. The sensitivity of an electric field sensor using a $Ti:LiMbO_3$ optical modulator is strongly affected by the shape of a electrode(probe antenna). To measure the low frequency electric field, a probe antenna of wide effective area is more useful than the usual dipole antenna. As a proof of this, the optical modulator was fabricated with a plate-type probe antenna and the usefulness of this antenna tested for measuring low frequency electric field strength. Measurements were performed in the range 0.1 V/cm to 60 V/cm at 60Hz through 100 kHz. Using a probe antenna of $10\;mm{\times}10\;mm$, the output voltage of $10^{-2}\;mV$ was measured with respect to the electric field strength of 0.1 V/cm at 60 Hz. By increasing the effective area of the probe antenna, better sensitivity is obtainable over the measured range.

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Characteristics of A Diaphragm-Type Fiber Optic Fabry-Perot Interferometric Pressure Sensor Using A Dielectric Film (유전체 박막을 이용한 다이아프램형 광섬유 Fabry-Perot 간섭계 압력센서의 특성)

  • Kim, M.G.;Yoo, Y.W.;Kwon, D.H.;Lee, J.H.;Kim, J.S.;Park, J.H.;Chai, Y.Y.;Sohn, B.K.
    • Journal of Sensor Science and Technology
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    • v.7 no.3
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    • pp.147-153
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    • 1998
  • The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

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NO gas-sensing properties of In2O3 nanobelt films prepared by thermal evaporation (진공증착법으로 제조한 In2O3 나노벨트막의 NO가스감지특성)

  • Choi, Mu-Hee;Ma, Tae-Young
    • Journal of Sensor Science and Technology
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    • v.15 no.6
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    • pp.406-410
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    • 2006
  • The films of indium oxide $In_{2}O_{3}$) were deposited onto $SiO_{2}$ coated Si wafers by a thermal evaporation method. Substrate temperature was varied from $25^{\circ}C$ to $300^{\circ}C$. Deposition rate increased to $250^{\circ}C$ and then decreased rapidly. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films deposited at $250^{\circ}C$ were found to have a nanobelt structure. Resistor-type gas-sensors were fabricated with $In_{2}O_{3}$ films using Pt as electrodes. The resistance variation of $In_{2}O_{3}$ films with the concentration of NO gas was measured. The $In_{2}O_{3}$ films deposited at $250^{\circ}C$ showed the highest sensitivity to the NO gas.