• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.261-265
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• 2011

The sterilization effects of atmospheric pressure plasma with the mixture of argon and oxygen were analyzed. The plasma reactor with the shape of dielectric barrier discharge produced the uniform distribution of glow discharge and generated ozone gas effectively according to the various process parameters. The sterilization for E. coli was affected by power, oxygen ratio in the mixture gas, treatment time and distance between reactor and sample. The concentration of ozone was a major source for the sterilization of E. coli, which was enhanced by the increase of power and oxygen ratio. In this study, the effect of atmospheric pressure plasma treatment for the sterilization was confirmed and its result can deliver the atmospheric pressure plasma treatment as the novel sterilization method instead of conventional methods.

• Economic and Environmental Geology
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• v.26 no.2
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• pp.145-154
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• 1993

Gold-silver deposits in the Kwangyang-Seungju area are emplaced along $N4^{\circ}{\sim}10^{\circ}W$ to $N40^{\circ}{\sim}60^{\circ}W$ trending fissures and fault in Pre-cambrian Jirisan gneiss complex or Cretaceous diorite. Mineral constituents of the ore from above deposits are composed mainly of pyrite, arsenopyrite, pyrrhotite, magnetite, sphalerite, chalcopyrite, galena and minor amount of electrum, tetrahedrite, miargyrite, stannite, covellite and goethite. The gangue minerals are predominantly quartz and calcite. Gold minerals consist mostly of electrum with a 56.19~79.24 wt% Au and closely associated with pyrite, chalcopyrite, miargyrite and galena. K-Ar analysis of the altered sericite from the Beonjeong mine yielded a date of $94.2{\pm}2.4\;Ma$ (Lee, 1992). This indicates a likely genetic tie between ore mineralization and intrusion of the middle Cretaceous diorite ($108{\pm}4\;Ma$). The ${\delta}^{34}S$ values ranged from +1.0 to 8.3‰ with an average of +4.4‰ suggest that the sulfur in the sulfides may be magmatic origin. The temperatures of mineralization by the sulfur isotopic composition with coexisting pyrite-galena and pyrite-chalcopyrite from Beonjeong and Jeungheung mines were $343^{\circ}C$ and $375^{\circ}C$ respectively. This temperature is in reasonable agreement with the homogenization temperature of primary fluid inclusion quartz ($330^{\circ}C$ to $390^{\circ}C$; Park.1989). Four samples of quartz from ore veins have ${\delta}^{18}O$ values of +6.9~+10.6‰ (mean=8.9‰) and three whole rock samples have ${\delta}^{18}O$ values of +7.4~+10.2‰ with an average of 7.4‰. These values are similar with those of the Cretaceous Bulgugsa granite in South Korea (mean=8.3‰; Kim et al. 1991). The calculated ${\delta}^{18}O_{water}$ in the ore-forming fluid using fractionation factors of Bulgugsa et al. (1973) range from -1.3 to -2.3‰. These values suggest that the fluid was dominated by progressive meteoric water inundation through mineralization.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Journal of the Korea Concrete Institute
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• v.14 no.1
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• pp.1-7
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• 2002

The purpose of this research is to obtain a practical expression for the estimation of compressive strength of concrete using non-destructive testing method such as rebound Schmidt hammer and ultrasonic pulse

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.753-761
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• 2012

The reduction behavior of low level oxides such as (T.Fe), (MnO) and ($P_2O_5$) in molten EAF slag was investigated using commercial reductants. In an air atmosphere, the slag volume increased and the reduction rate of the slag was very low due to the oxidation loss of reductants by oxygen in the air. The reduction rate of the slag was also low when a commercial reductant was used alone in an Ar gas atmosphere. The reason is probably because the material transfer through the interface between the slag and reductant is difficult due to the formation of high melting point oxide. When reductants were mixed with burnt lime in order to form low melting point reaction products, the reduction rate of the slag increased up to the range of 45-70%. By using the mixtures of reductants and burnt lime so as to form a low melting point slag at the reaction end, the reduction rate of the slag was improved up to 60-85%.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.6-10
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• 2003

Silver nano-powder was added to Ma $B_2$ to make (Ag)$_{(x)wt.%}$(Mg $B_2$)$_{(l00-x)wt.%}$ (A $g_{x}$-Mg $B_2$) (10 $\leq$ x $\leq$ 50) composite superconductors to investigate the effect of the Ag nano-powder on the vortex pinning. Pellets made out of the mixed powder were put inside stainless steel tubes, which were sintered at 85$0^{\circ}C$ in Ar atmosphere. No impurity phase was identified for as-rolled samples. However, both the Mg $B_2$ and the A $g_{x}$-Mg $B_2$ composite pellets, when sintered, contain small amount of Mg $B_4$ and MgAg impurity phases. From the magnetization study, it was found that the flux pinning was improved in the high magnetic field region (> 3 T) only when 10w/o Ag was added to Mg $B_2$. The "two step" structures in ZFC M(T) curve gradually increased as the amount of Ag added increased. Pinning centers can be created by adding a suitable amount of Ag nano-powder which is not too large to increase the decoupling between the Mg $B_2$ grains.crease the decoupling between the Mg $B_2$ grains.

• Journal of the Korean Society of Safety
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• v.31 no.3
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• pp.42-46
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• 2016

In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.