• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.234-238
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• 2005

Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline $La_3Ga_5SiO_{14}$ wafer have been examined in $Cl_2/Ar$ inductively coupled plasma (ICP) discharges. Maximum etch rate ${\sim}1600{\AA}/min$ was achieved either at relatively high source power $({\sim}1000W)$ or high $Cl_2$ content conditions in $Cl_2/Ar$ discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.232-236
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• 2005

The etching characteristics of a $LiNbO_{3}$ optical waveguide structure have been investigated using neutral loop discharge plasma with the mixture of $C_{3}F_{8}$ and Ar and the bias power parameters. The etching rate and profile angle of optical waveguide with etching parameters were evaluated by scanning electron microscopy. Also, the etching RMS roughness was evaluated by atomic force microscopy. From the results of optimum etching conditions are the $C_{3}F_{8}$ gas flow ratio of 0.2 and the bias power of 300 W.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.47-52
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• 1996

Cl-based gas chemistry is generally used to etching for al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with H$_{2}$O due to air exposure and results in Al corrosion. In this study, the corrosion phenomena of Al wer examined with XPS(X-ray photoelectron spectroscopy) and SEM (scanning electorn microscopy). It was confirmed that chlorine mainly existed at the grian boundary of Al alloy after plasma etching of Al alloy with cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al alloy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.67-70
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• 2001

$SrBi_2Ta_2O_9$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1060 Am /min in $Cl_2$(20)/CF_4(20)/Ar(80). The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase CI radical. The etch profile of SBT thin films in $Cl_2/CF_4/Ar$ plasma is steeper than in $CF_4$/Ar plasma.Ā저會Ā저ﶖ⨀⡌ឫഀĀ᐀會Ā᐀㡆ﶖ⨀쁌ឫഀĀ᐀會Ā᐀遆ﶖ⨀郞ග堂瀀ꀏ會Āﶖ⨀〲岒ऀĀ᐀會Ā᐀䁇ﶖ⨀젲岒Ā㰀會Ā㰀顇ﶖ⨀끩Ā㈀會Ā㈀ﶖ⨀䡪Ā᐀會Ā᐀䡈ﶖ⨀Ā᐀會Ā᐀ꁈﶖ⨀硫Ā저會Ā저ﶖ⨀샟ගကĀ저會Ā저偉ﶖ⨀栰岒ఀĀ저會Ā저ꡉﶖ⨀1岒Ā저會Ā저Jﶖ⨀惝ග؀Ā؀會Ā؀塊ﶖ⨀ග㼀Ā切會Ā切끊ﶖ⨀⣟ගఀĀ搀會Ā搀ࡋﶖ⨀큭킢Ā저會Ā저

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.181-181
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• 2000

최근 반도체 공정에 있어 0.2$\mu\textrm{m}$ 이하의 미세 공정에 필요해짐에 따라 plasma를 이용한 공정이 필요하게 되었다. 그러나 ICP를 이용하여 SiO2를 etching 할 경우, SiO2/Si 선택비를 높이기 우해 전자 온도 제어가 필요하다. grid를 이용하여 전자 온도를 제어할 경우 plasma potential이 plasma 변수 제어에 중요한 역할을 하게 된다. 이번 실험에서는 grid를 이용하여 plasma potential를 변화시켜 주면서 생기는 플라즈마 변수 변화에 대해 연구하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.