• Korean Journal of Materials Research
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• v.14 no.8
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• pp.547-551
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• 2004

The sulfidation behaviour of Fe-XAl-0.3Y(X=5, 10, 14, 25 $wt.\%$) alloys was investigated at 1123 K in $H_2/H_{2}S$ gas atmosphere for $1\sim24$ hrs using SEM/EDX, XRD and EPMA. The weight changes of Fe-XAl-0.3Y alloys followed the parabolic rate law, Sulfidation rates of iron aluminide alloys with high Al content were one-twentieth lower than that of 5Al alloys. This is due to the formation of protective $Al_{2}O_3$ oxides on the surface of 10Al, 14Al and 25Al alloys. By calculating partial pressure of impurity oxygen contained $H_2/H_{2}S$ gas, the $Al_{2}O_3$ oxides formation could be explained using Fe-Al-S-O thermodynamic stability diagram. The sulfidation product scales of the 5Al alloy showed that thick iron sulfide scale(FeS) containing porosities formed during early stages of sulfidation. With continued sulfidation, aluminum sulfide was formed at the alloy/scale interface.

• Applied Chemistry for Engineering
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• v.2 no.1
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• pp.30-37
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• 1991

The production of hydrogen from steam by reduced iron with additives such as CuO, $In_2O_3$, $MoO_3$ and $WO_3$ has been kinetically investigated. It was shown that all additives have a promoting effect on reaction activity in the order of $$MoO_3{\gg}In_2O_3{\sim_=}WO_3{\sim_=}CuO$$. The shrinking core model was applied to predict the complete conversion time and the results were quite comparable with experimental values. The reaction was carried out in a fixed flow reactor packed with reduced iron with 1 wt % of additives under the conditions, $600-750^{\circ}C$, Ar flow rate of 1 L/min and steam partial pressure of 0.085 atm. The apparent activation energies were 14.2, 20.9, 21.3, 22.4 and 27.9 kJ/mol with $MoO_3$, $In_2O_3$, $WO_3$, CuO and without additive, respectively.

• Journal of Korean Academy of Nursing
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• v.36 no.6
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• pp.992-1001
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• 2006

Purpose: This study was done to provide data for a nursing intervention to alleviate newborn pain clinically by investigating the effect of oral glucose. Methods: Subjects were newborns hospitalized in the nursery. Informed consent was obtained from parents of 60 newborns. A heel stick was carried out for a test on 3 groups; the experimental, placebo, and control group. The Neonatal infant pain scale(NIPS), respiration rate, heart rate, peripheral oxygen partial pressure($SpO_2$), and crying duration were measured to assess pain reaction. All neonatal behaviors were recorded on videotape. Results: There were significant differences in pain behavior during stimulus(F=4.195, p=.020), pain behavior immediately after blood-sampling (F=4.114, p=.021), and pain behavior 3 minutes after that (F=3.630, p=.033). However, there were no significant differences in heart rate, respiration rate, peripheral oxygen partial pressure or crying duration after the heel stick among the groups. Conclusions: Oral administration of glucose before a heel stick caused the reduction of neonatal pain behavior, which means that it has an effect of pain relief.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.435-438
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• 2003

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

• Progress in Superconductivity
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• v.11 no.2
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• pp.123-127
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• 2010

The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $\Delta\phi$ values of ${\sim}8.9^{\circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{\sim}16\;{\AA}/sec$. During deposition, the change of oxygen partial pressure(${\rho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{\circ}C$ with superior $\Delta\phi$ and $\Delta\omega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{\circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $\Delta\phi$ value of $5.5^{\circ}$, $\Delta\omega$ value of $2^{\circ}$ and Ra value of 2.2 nm.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.749-755
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• 1997

Molybdenum phosphate(P/Mo = 0.6) has been synthesized with ammonium molybdate and phosphoric acid under aqueous solution. The kinetics of the ammoxidation of methylpyrazine over molybdenum phosphate catalyst was investigated with the variation of reaction temperature and partial pressure of methylpyrazine, oxygen and ammonia, respectively at atmospheric pressure. The catalytic activity was constant for 300hrs operation under our experimental conditions. Under the steady-state condition, the rate equation of methylpyrazine was shown as $-r=kP_{MP}P_{NH3}{^0}P_{O2}{^{\gamma}}({\gamma}=2.2;1.3{\leq}P_{O2}(kPa){\leq}4)$. The apparent activation energy was 29.6kcal/mol below 623K. The main product obtained in the ammoxidation of methylpyrazine is cyanopyrazine whose selectively was kept always over 90% regardless of conversion.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• Tuberculosis and Respiratory Diseases
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• v.52 no.1
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• pp.14-23
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• 2002

Background: The opitmal ventilator setting during partial liquid ventilation(PLV) is controversial. This study investigated the effects of various gas exchange parameters during PLV in normal rabbit lungs in order to aid in the development of an optimal ventilator setting during PLV. Methods: Seven New-Zealand white rabbits were ventilated in pressure-controlled mode with the following settings; tidal volume($V_T$) 8 mL/kg, positive end-expiratory pressure(PEEP) 4 $cmH_2O$, inspiratory-to-expiratory ratio(I:E ratio) 1:2, fraction of inspired oxygen($F_TO_2$) 1.0. The respiration rate(RR) was adjusted to keep $PaCO_2$ between 35~45 mmHg. The ventilator settings were changed every 30 min in the following sequence : (1) Baseline, as the basal ventilator setting, (2) Inverse ratio, I:E ratio 2:1, (3) high PEEP, adjust PEEP to achieve the same mean inspiratory pressure (MIP) as in the inverse ratio, (4) High $V_T$, $V_T$ 15 mL/kg, (5) high RR, the same minute ventilation (MV) as in the High $V_T$. Subsequently, the same protocol was repeated after instilling 18 mL/kg of perfluorodecalin for PLV. The parameters of gas exchange, lung mechanics, and hemodynamics were examined. Results: (1) The gas ventilation(GV) group showed no significant changes in the $PaO_2$ at all phases. The $PaCO_2$ was lower and the pH was higher at the high $V_T$ and high RR phases(p<0.05). No significant changes in the lung mechanics and hemodynamics parameters were observed. (2) The baseline $PaO_2$ for the PLV was $312{\pm}$ mmHg. This was significantly lower when decreased compared to the baseline $PaO_2$ for GV which was $504{\pm}81$ mmHg(p=0.001). During PLV, the $PaO_2$, was significantly higher at the high PEEP($452{\pm}38$ mmHg) and high $V_T$ ($461{\pm}53$ mmHg) phases compared with the baseline phase. However, it did not change significantly during the inverse I:E ratio or the high RR phases. (3) The $PaCO_2$ was significantly lower at high $V_T$ and RR phases for both the GV and PLV. During the PLV, $PaCO_2$ were significantly higher compared to the GV (p<0.05). (4) There were no important or significant changes in of baseline and high RR phases lung mechanics and hemodynamics parameters during the PLV. Conclusion: During PLV in the normal lung, adequate $V_T$ and PEEP are important for optimal oxygenation.

• Journal of Preventive Medicine and Public Health
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• v.20 no.2 s.22
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• pp.221-227
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• 1987

In vivo ethane production in rats was used as an index of oxygen toxicity. The rats were allocated to four exposure conditions; hyperbaric oxygenation (HBO=5 ATA, 100% $O_2$), normobaric oxygenation (NBO=1 ATA,100% $O_2$), hyperbaric aeration (HBA=5 ATA, 21% $O_2$) and normobaric aeration (NBA=1 ATA, 21% $O_2$). After 120 minutes of exposure, the rats exposed to high concentration and/or high pressure oxygen exhaled significantly larger amounts of ethane than those exposed to NBA, and the differences in ethane production between any two groups were statistically significant (p<.01). This finding supports the hypothesis that hyperoxia increases oxygen free-radicals and the radicals produce ethane as a result of lipid peroxidation. It is notable that the ethane exhalation level of the HBA group was significantly higher than that of the NBO group. This difference could not be accounted for by the alveolar oxygen partial presure difference between the two groups.

• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.24-29
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• 1990

The TiN filmms were deposited on the stainless steel substrates by BARE techinique in order to investigate the effects of process parameters such as source-to-substate distance (15-35cm), N2 pressure(4$\times$10-10 -1$\times$10-3mb)and bias voltage(O-2000V), on the deposition rate, the concentration ratio [N/Ti] and the surface color of the films. The deposition rate was deduced from the weight measurement, the [N/ti] ratio by ESCA. The deposition rate decreased with a relationship of=40.2/D2 where D was source-to-substrate distance. The effect of the bias voltage and the N2pressure on the deposition rate, however, appeared negligble. The [N/Ti] ratio was in the narrow range of 0.7 tp 0.8 It increased slightly with the N2 partial pressure and deceased with the source-to-substrate distance. It was confired by ESCA that a significant amount of oxygen and carbon was contaminated after deposition in the top surface of TiN films. The surface color of TiN film was changed from light gold yellow to reddish gold yellow with increasing [N/Ti] ratio.