• Journal of the Korean Chemical Society
• /
• v.37 no.4
• /
• pp.390-395
• /
• 1993

The x values and electrical conductivities of the nonstoichiometric compounds$ CeO_{2-x} have been measured in a temperature range from 600 to 1200$^{\circ}C$ under oxygen partial pressure of $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm. The enthalpy of the defect formation shows an endothermic process with the oxygen partial pressure dependence (1/n value) of -1/3.18 ∼ -1/3.69. The activation energy and 1/n value for the electrical conductivity are estimated as 1.75 eV and -1/4, respectively. According to the x values, the $\sigma$ values, and the thermodynamic data, the defect structure of the ceria seems to be the formation of singly charged negative oxygen vacancies. The n-type semiconducting behaviors could be explained by the presence of excess metals in the lattice as the conduction electron donor.

• Journal of Sensor Science and Technology
• /
• v.1 no.1
• /
• pp.93-100
• /
• 1992

Sinterability, mechanical and electrical properties of yttria-stabilized zirconia(92 mole% $ZrO_{2}$+8 mole% $Y_{2}O_{3}$) doped with 0.5 mole% $SiO_{2}$ and $0{\sim}2.0 mole%{\;}Al_{2}O_{3}$ were studied as a function of $Al_{2}O_{3}$ addition. Sintered density increased with increasing $Al_{2}O_{3}$ addition up to 0.5 mole % but leveled off with further addition. Victors hardness is proportional to sintered density. The specimen with 0.5 mole% $Al_{2}O_{3}$ and 0.5 mole% $SiO_{2}$ exhibited the maximum electrical conductivity and revealed a maximum electromotive force for a given oxygen partial pressure. Experimental voltage curve of this oxygen sensor take on a sharper, more steplike transition at the stoichiometric A/F ratio than those of other commercial oxygen sensors.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.407-410
• /
• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.407-410
• /
• 1998

The characteristics of $(Ba,Sr)TiO_3$[BST] thin films with the variation of $O_2/Ar$ ratio in sputtering gas deposited on $RuO_2$ bottom electrode were investigated. Dielectric constant of BST film increases from 135 to 190 with increasing oxygen partial pressure from 10 to 50, which is mainly due to the improved crystallinity of BST film. The instability of $RuO_2$ surface in $BST/RuO_2$ interface and the increase in the surface roughness of BST thin films with higher $O_2/Ar$ ratio appeared to play an important roles on the degradation of the leakage current characteristics of $Al/BST/RuO_2$ capacitor with various $O_2/Ar$ ratio in sputtering gas. As a consequence, the leakage current of BST thin film showed the lowest value of $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$ at $O_2/Ar{\approx}1/9$.

• Resources Recycling
• /
• v.21 no.5
• /
• pp.65-71
• /
• 2012

The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.361.1-361.1
• /
• 2014

PbVO3 (PVO), a polar magnetic material considered as a candidate of multiferroic, has ferroelectricity along the c-axis and 2-dimensional antiferromagnetism lying in the in-plane through epitaxial growth [1,2]. PVO thin films were grown on LaAlO3 (001) substrates under reduction atmosphere from a stable Pb2V2O7 sintered target using pulsed laser deposition method. Epitaxial growth of the PVO films is possible only under Ar atmospheren with no oxygen partial pressure. X-ray diffraction was used to investigate the phase formation and texture of the films. We confirmed epitaxial growth of the PVO films with crystalline relationship of PbVO3[001]//LaAlO3[001] and PbVO3[100]//LaAlO3[100]. In addition, surface morphology of the films displays drastic changes in accordance with the growth conditions. Elongated PVO grains are related to the Pb2V2O7 pyrochlore structure. The relation between structural deformation and ferroelectricity in the PVO films was examined by local measurement of piezoresponse force microscopy.

• Journal of Electrochemical Science and Technology
• /
• v.7 no.2
• /
• pp.91-96
• /
• 2016

Oxidation behaviours of ash free coal (AFC), carbon, and H₂ fuels were investigated with a coin type molten carbonate fuel cell. Because AFC has no electrical conductivity, its oxidation occurs via gasification to H₂ and CO. An interesting behaviour of mass transfer resistance reduction at higher current density was observed. Since the anode reaction has the positive reaction order of H₂, CO₂ and H₂O, the lack of CO₂ and H₂O from AFC results in a significant mass transfer resistance. However, the anode products of CO₂ and H₂O at higher current densities raise their partial pressure and mitigate the resistance. The addition of CO₂ to AFC reduced the resistance sufficiently, thus the resistance reduction at higher current densities did not appear. Electrochemical impedance results also indicate that the addition of CO₂ reduces mass transfer resistance. Carbon and H₂ fuels without CO₂ and H₂O also show similar behaviour to AFC: mass transfer resistance is diminished by raising current density and adding CO₂.

• Journal of the Korean Chemical Society
• /
• v.31 no.6
• /
• pp.498-502
• /
• 1987

Electrical conductivities of $(ZrO_2)_x-(Tm_2O_3)_y$ systems containing 1, 3 and 5mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperatures from 600 to 1,100$^{\circ}$C and oxygen partial pressures from $10^{-5}$ to $2{\times}10^{-1}atm$. Plots of log conductivity vs. 1/T are found to be linear and average activation energy is 1.51 eV. The electrical conductivity dependences on PO$_2$ are different at two temperature regions, indicating ${\sigma}{\alpha}PO_2^{1/5.3}$ and ${\sigma}{\alpha}PO_2^{1/10.7}$ at high-and low-temperature regions, respectively. The defect of $(ZrO_2)_x-(Tm_2O_3)_y$ system is $V_{Tm}^{'''}$ and an electron hole is suggested as a carrier at high temperature region. At low temperature region, a mixed ionic and hole conduction is reasonable.

• Journal of the Korean Magnetics Society
• /
• v.23 no.1
• /
• pp.7-11
• /
• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Applied Chemistry for Engineering
• /
• v.10 no.6
• /
• pp.885-888
• /
• 1999

This study was carried out to determine the reaction kinetic constant of the dehydration - thermal decomposition of $Na_2B_4O_7{\cdot}10H_2O/Na_2B_4O_7{\cdot}5H_2O$ and to investigate the durability during the repeated use of a chemical heat-storage material and the reproducibility of reaction system. The order of the dehydration reaction was 1st-order. The reaction rate was directly proportional to a partial pressure difference of water steam. The kinetic constant was 0.27 and the reproducibility of dehydration reaction for a kinetic constant and a reaction order was excellent. The activity variation in the durability test of a chemical heat-storage material was within range of ${\pm}5%$ during the repeatedly use in several times.