• 제목/요약/키워드: $O_2$ partial pressure

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IS cycle에서의 [DMIm]$MeSO_4$를 이용한 $SO_2/O_2$ 분리 ([ $SO_2/O_2$ ] Separation with [DMIm]$MeSO_4$ in IS Cycle)

  • 이기용;송광호;유계상;김홍곤;정광덕;김창수
    • 한국수소및신에너지학회논문집
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    • 제19권1호
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    • pp.49-55
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    • 2008
  • The feasibility of ionic liquid as a novel absorbent of $SO_2$ for the separation of $SO_2$ from $SO_2/O_2$ mixture in the thermochemical IS(Iodine-Sulfur) cycle was investigated. 1,3-dimethylimidazolium methylsulfate ([DMIm]$MeSO_4$) had shown twenty five times higher solubility of $SO_2$ than that of $O_2$. The dependence of $SO_2$ solubility by [DMIm]$MeSO_4$ on temperature and $SO_2$ partial pressure was examined, which confirmed the possibility of temperature and pressure swing for the separation process. Through cyclic absorption and desorption with temperature swing the stability of [DMIm]$MeSO_4$ in the separation process was also demonstrated. As a result of the experiments carried out, $SO_2$ separation from $SO_2/O_2$ mixture with ionic liquid([DMIm]$MeSO_4$) can be applied to the thermochemical IS cycle.

전이금속이 담지된 세리아의 메탄 산화 반응에 대한 연구 (A Study of Methane Oxidation over Transition Metal (TM)/CeO2 (TM=Ni, Co, Cu, Fe))

  • 안기용;정용재;이종호
    • 한국수소및신에너지학회논문집
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    • 제23권4호
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    • pp.346-352
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    • 2012
  • The properties of methane oxidation were studied in this research over transition metal containing $CeO_2$ (TM/$CeO_2$, TM=Ni, Co, Cu, Fe) with TM content of 5 wt. % at atmospheric pressure. The characteristics of catalysts were investigated by various characterization techniques, including XRD, GC, SEM and EPMA analyses. The catalytic tests were carried out in a fixed Rmix ratio of 1.5 ($CH_4/O_2$) in a fixed-bed reactor operating isothermally at atmospheric pressure. Only the Ni/$CeO_2$ catalysts showed syngas production above $400^{\circ}C$ via typical partial oxidation reaction whereas other catalysts induced complete oxidation resulting in the production of $CO_2$ and $H_2O$ in whole reaction temperature range. From the quantitative analysis on carbon deposition after catalytic tests, Cu/$CeO_2$ was found to show the highest resistance on carbon deposition. Therefore Cu can be proposed as an efficient catalyst element which can be combined with a conventional Ni-based SOFC anode to enhance the carbon tolerance.

화학선 증착법에 의한 $MgF_2$ 박막제조 (Chemical Beam Deposition of $MgF_2$ Thin Films)

  • 박보현;백성기
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.299-306
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    • 1996
  • We invesgated the fesibility of thin films deposition by pyrolysis of metalorganic precursors using chemical beam deposition (CBD) process. We attempted to understand the effects of deposition variables such as substrate temperature operating pressure effusion cell temperature and H2 partial pressure on the properties of MgF2 grown by CBD. Mg(tfac)2 was used as a precursor. MgF2 thin films were always grown in an amorphous state and crystallized bypost-annealing. he higher the substrate temperature and the lower the operating pressure the less the impurities I the deposited MgF2 thin films. H2 gas has to be supplied for the pyrolitic reaction of Mg(tfac)2 decomposition. MgF2 films annealed in H2 have lower C impurity than those annealed in O2. But their crysatllinity was independent of annealing atmosphere. The optimum conditions for the prepara-tion of MgF2 films by CBD process were as following : The substrate temperature 55$0^{\circ}C$ the operating pressure 10-4 torr; effusion cell temperature 21$0^{\circ}C$ the percentage of H2 100% Post-annealing in H2 gas was required to remove residual carbon and to form MgF2 crystalline phase.

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Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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Measurement of Energy bands of the MgO Layer in AC-PDPs

  • Jeoung, S.J.;Lee, H.J.;Son, C.G.;Kim, J.H.;Park, E.Y.;Hong, Y.J.;You, N.L.;Lee, S.B.;Han, Y.G.;Jeoung, S.H.;Song, K.B.;Moon, M.W.;Oh, P.Y.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.906-909
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    • 2006
  • The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

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Optimal oxygen saturation in premature infants

  • Chang, Mea-Young
    • Clinical and Experimental Pediatrics
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    • 제54권9호
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    • pp.359-362
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    • 2011
  • There is a delicate balance between too little and too much supplemental oxygen exposure in premature infants. Since underuse and overuse of supplemental oxygen can harm premature infants, oxygen saturation levels must be monitored and kept at less than 95% to prevent reactive oxygen species-related diseases, such as retinopathy of prematurity and bronchopulmonary dysplasia. At the same time, desaturation below 80 to 85% must be avoided to prevent adverse consequences, such as cerebral palsy. It is still unclear what range of oxygen saturation is appropriate for premature infants; however, until the results of further studies are available, a reasonable target for pulse oxygen saturation ($SpO_2$) is 90 to 93% with an intermittent review of the correlation between $SpO_2$ and the partial pressure of arterial oxygen tension ($PaO_2$). Because optimal oxygenation depends on individuals at the bedside making ongoing adjustments, each unit must define an optimal target range and set alarm limits according to their own equipment or conditions. All staff must be aware of these values and adjust the concentration of supplemental oxygen frequently.

EFFECT OF ALUMINIDE-YTTRIUM COMPOSITE COATING ON THE OXIDATION RESISTANCE OF TiAl ALLOY

  • Jung, Hwan-Gyo;Kim, Jong-Phil;Kim, Kyoo-Young
    • 한국표면공학회지
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    • 제29권6호
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    • pp.607-614
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    • 1996
  • Yttrium(Y) coating was incorporated by ion-plating method either directly on the TiAl substrate or after pack aluminizing on TiAl to improve the oxidation resistance of TiAl alloy. After Y-coating, heat treatment at low oxygen partial pressure was carried out. Performance of various coating was evaluated by isothermal and cyclic oxidation tests. A simple Y-coating without pack aluminizing can give a detrimental effect on the. oxidation resistance of TiAl alloy, because it enhances formation of $TiO_2$. On the other hand, a composite coating of aluminide-yttrium has shown excellent oxidation resistance. A continuous protective $Al_2O_3$ scale is formed on the aluminized TiAl, and Y-coating improves $Al_2O_3$ scale adherence and substantially prevents depletion of Al in the aluminide-coating layer.

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새로운 $NH_{3}-O_{2}$ 산화 방법(1) - 매카니즘 및 결정성 (A New $NH_{3}-O_{2}$Oxidation Method (1) - Mechanism and Crystal Properties)

  • 복은경;박선우;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.360-362
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    • 1988
  • The new oxidation method was presented to grow the oxide layer by thermal reaction of $NH_{3}$ and $O_{2}$. The growth rate increased according as increase of partial pressure of $NH_{3}$. Optical transparent of the grown film was 12% compared with 17% of thermal oxidation when the wave number was $1,100cm^{-1}$. The oxide layer with good quaility was obtained.

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장거리 열수송을 위한 메탄올 분해 촉매에 대한 실험적 연구 (An experimental study on methanol decomposition catalysts for long distance-heat transportation)

  • 문승현;박성룡;윤형기;윤기준
    • 설비공학논문집
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    • 제10권3호
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    • pp.334-342
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    • 1998
  • In this experimental study, methanol was chosen as a system material for a long -distance heat transportation. Not only transition metals but also noble metals were investigated as an active component, and several metal oxides, such as ${\gamma}$-$Al_2$,$O_3$, $SiO_2$, etc. as a support. In general, transition metal catalysts absorbed more heat than noble metal catalysts. The amount of heat absorption and CO selectivity depends on temperature and methanol partial pressure, and 25$0^{\circ}C$ Ni/$SiO_2$ catalyst showed the best result for methanol decomposition reaction.

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ITO투명도전막의 전기, 광학적 특성 및 그 응용 (The Application and Electrical, Optical Properties of $In_2O_3$: Sn Transparent Conducting Films)

  • 이동훈;박기철;박창배;김기완
    • 대한전자공학회논문지
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    • 제23권4호
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    • pp.498-505
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    • 1986
  • In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

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