• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1433-1435
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• 1997

ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.119-122
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• 2002

The NiO buffer layers for YBCO coated conductor were prepared on textured Ni substrates by MOCVD method and the degree of texturizing and the surface roughness were analyzed X-ray pole figure and AFM and SEM. Processing variables were oxygen partial pressure and substrate temperature. (200) textured NiO layer was formed at 450~$470^{\circ}C$ and oxygen partial pressure of 1.67 Torr. Out-of-plane($\omega$-scan) and in-plane($\Phi$-scan) texture were $10.34^{\circ}$ and $10.00^{\circ}$ respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1~4.6 nm.

• 한국대기환경학회지
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• 제6권1호
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• pp.57-72
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• 1990

The oxidation of carbon monoxide on a catalyst, $LaSrNiCoO_3$ was investigatigated with a plug flow system. Kinetic quantities such as reaction-rate, reaction order and Arhenius-parameters at various reactor temperature from 200$^\circ$C to 300$^\circ$C were determined. Also, the optimum condition for the oxidation of carbon monoxide with this catalyst was determined and are as follows. Partial pressure of oxigen ; 428mmHg Partial pressure of carbon monoxide ; 332mmHg Mixed moral ratio of oxigen and Carbon monoxide ; 1.3 : 1 Total gas flow ; 224ml/min Reaction temperature ; 340$^\circ$C The reaction kinetic equation at the optimum condition, temperature range from 200$^\circ$C to 340$^\circ$C, are as follow. $$ $v = Ae^{6.5Kcal/RT} [CO]^{0.93 \sim 0.98} [O_2]^{0.42 \sim 0.50}$ $$ In addition to this, numerical calculation were performed to evaluate the mass and heat transfer effect on this system.

• Progress in Superconductivity
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• 제3권1호
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• 한국세라믹학회지
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• 제34권7호
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• pp.722-730
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• 1997

The nonstoichiometry (x) of UO2+x and (Er0.06U0.94)O2+x has been in-situ measure against oxygen activity (Po2) at elevated temperatures by a coulometric titration method. From the dependence of the oxygen excess (x) of UO2+x on Po2 at 1000℃, it has been concluded that (2Vo2Oia2Oib)〃〃and (2Vo2Oia2Oib)' clusters are prevailing at low oxygen partial pressure [log(Po2/atm) -10.6] and at high oxygen partial pressure [log(Po2/atm) -10.6], respectively. The nonstoichiometry is found to be reduced with the addition of Er, which is ascribed to the fact that the fixed-valent Er3+ reduces the oxidation capacities of UO2+x. The enthalpy of oxygen incorporation in (Er0.06li0.94)O2+x has been evaluated from the mean valences of U-ion as -180±70 kJ/mole.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.110-110
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• 2001

• 한국세라믹학회지
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• 제24권2호
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• pp.123-132
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• 1987

Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

• ALGAE
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• 제21권2호
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• pp.245-251
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• 2006

Diurnal and age-related changes in air pressure were measured in air bladders of Ascophyllum nodosum from the Atlantic coast of Nova Scotia. Exterior and interior bladder volumes vary significantly with 4 and 6 y bladders being about 40% larger than 2 y bladders (p < 0.01). Freshly collected bladders yielded a mean pressure of 40.8 ± 6.5 cm H2O. Overnight (20 h) dark treatment at 15°C generated pressure reductions by 80% in 2 y bladders but only by about 30% in 4 and 6 y bladders. Furthermore, in 2 y bladders 8 out of 11 bladders were reduced to atmospheric pressure. Pressure losses were inversely related to pressure recovery after 2.5 h in natural daylight, but after 5 h in daylight there was no significant difference in pressure within the age groups. Even under 25% of full illumination, bladders inflated to full pressure after 5 h. The results show that differences in bladder age and bladder wall thickness have roles in diurnal patterns of bladder inflation and deflation. These results confirm that bladder inflation is based on photosynthetic O2 production and not on partial pressures of O2 in the surrounding medium as was suggested for Sargassum. Chemical analyses of fluid recovered after the interior of bladders were washed with saline showed no evidence for the occurrence of surfactant that might be responsible for maintaining the air-liquid interface.

• 자원리싸이클링
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• 제20권4호
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• pp.71-77
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• 2011

$MoO_3$ 분말을 723 K ~ 873 K에서 Ar+$H_2$ 혼합기체를 이용히여 수평관상로에서 $MoO_2$로 훤원하였으며, 반용속도를 배가스 중의 상대습도를 측정하여 계산하였다. 반응속도는 수소가스 분압과 반응속도에 따라 현저하게 증가하였다. 환원 반응초기에 $H_2O$의 발생속도가 급격하게 증가하였으며, 시간의 경과에 따라 배가스 중의 $H_2O$ 분압은 급격하게 감소하였다. 이 시기에 환원 반응율은 직선적으로 증가하였다. 환원반응 초기의 $MoO_3$에서 $MoO_2$로의 환원반응의 활성화 에너지는 73.56 kJ/mol로 계산되었다.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.349-352
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• 2010

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.