• The Korean Journal of Ceramics
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• 제4권2호
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• pp.114-121
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• 1998

Using Hebb-Wagner's asymmetric cell, partial conductivities of holes and electrons in yttria stabilized zirconia doped with 10 mol% TiO2 have been estimated by a dc polarization measurement. The current interrruption method and ac impedance measurements have been also made to evaluate the ionic conductivity and to examine the consistency of the partial conductivities. Partial conductivities of electrons(σn) and holes (σp) were found to be pro-peortional to -1/4 and 1/4 power of partial pressure of oxygen gas, respectively, except for σn at reducing conditions. In comparison with 5 mol% doped YSZ, σn was found to increase with the increase of TiO2 concentration, but σp stayed at almost a constant value.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.357-363
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• 1996

The superconducting properties of YBa$_{2}$Cu$_{3}$$O_{7-x}$(YBaCuO) thin films prepared by laser ablation have been investigated. The x-ray diffraction patterns of the films were substantially different from one another. The Y and Ba oxides are formed by the collisions with oxygen molecules. On the other hand, the Cu oxide is mainly formed at initial stage of the laser irradiation. The YBaCuO films manufactured on MgO(100) substrate were indicated T$_{c}$(zero)=90 K, T$_{c}$(onset)=92 K, and J$_{c}$=3.5*10$^{5}$ A/cm$^{2}$(at 77.3K). The optimum conditions were found to be a substrate temperature of 710.deg. C, an energy density of 2 J/cm$^{2}$, and a target-substrate distance of 60mm in an oxygen partial pressure of 200 mTorr.0 mTorr.

• 한국초전도ㆍ저온공학회논문지
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• 제4권2호
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• 한국세라믹학회지
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• 제23권5호
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• pp.81-85
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• 1986

$SnO_2$ thin films have been prepared by chemical vapor deposition technique. Electrical and optical properties of the films have been investigated. It is found that the electrical condictivity and optical transparency of the films are most affected by deposition temperature and more affected by $SnCl_4$ partial pressure than by $O_2$ partial pressure. Experimental results show that the conductivity increases with high optical transparency as deposition temperature increases up to 50$0^{\circ}C$ but the conductivity decreases with the loss of transparency as deposition temperature increases above $600^{\circ}C$.

• 한국표면공학회지
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• 제18권3호
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• pp.116-124
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• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• 전기학회논문지
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• 제57권4호
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• pp.625-628
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• 2008

Ba-Zn ferrite powders for electromagnetic insulator were synthesized by self-propagating high-temperature synthesis(SHS) with a reaction of $xBaO_2+(1-x)ZnO+0.5Fe_2O_3+Fe{\rightarrow}Ba_xZn_{1-x}Fe_2O_4$. In this study, phase indentification of SHS products was carried out by using x-ray diffractometry and quasi-nano sized Ba-Zn powders were prepared by a pulverizing process. SHS mechanism was studied by thermodynamical analysis about oxidation reaction among $BaO_2,\;ZnO,\;Fe_2O_3$, and Fe. As oxygen pressure increases from 0.25 MPa to 1.0 MPa, the SHS reactions occur well and make clearly the SHS products. X-ray analysis shows that final SHS products formed with the ratio of $BaO_2/ZnO$ of 0.25, 1.0 and 4.0, are mainly $Ba_xZn_{1-x}Fe_2O_4$. Based on thermodynamical evaluation, the heat of formation increases in the order of $ZnFe_2O_4,\;BaFe_2O_4$, and $Ba_xZn_{1-x}Fe_2O_4$. This supports that $Ba_xZn_{1-x}Fe_2O_4$ phase is predominately formed during SHS reaction. The SHS reactions to form $Ba_xZn_{1-x}Fe_2O_4$ depends on oxygen partial pressure, and the heat of formation during the SHS reaction. The SHS reactions tends to occur well with increasing the oxygen partial pressure and BaO2/ZnO ratio in the reactants This means that the SHS reaction for the formation of Ba-Zn ferrite includes the reduction of BaO2/ZnO and the oxidation of Fe. $Ba_xZn_{1-x}Fe_2O_4$ powders after pulverizing is agglomeratedwith a size of about $50{\mu}m$, in which quasi-nano sized particles with about 300nm are present.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.168.1-168
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• 2002

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.124-128
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• 2000

Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

• 한국세라믹학회지
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• 제24권2호
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• pp.179-185
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• 1987

The microstructure and the electrical conductivity of MgO-doped Cr2O3 were investigated as a function of oxygen partial presure, temperature, and MgO content. The grain size was estimated about 1.0$\mu\textrm{m}$. The solubility limit is increased with oxygen partial pressure. Above the solubility limit of MgO in Cr2O3, the spinel phase(MgCr2O4) is formed by the reaction of MgO and Cr2O3. The electrical conductivity of MgO-doped Cr2O3 within the solubility limit is increased with MgO content. Above the solubility limit, however, it is decreased with increasing MgO content because of the formation of the spinel phase.

• Progress in Superconductivity
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• 제7권1호
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• pp.58-63
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• 2005

We investigated the surface oxidation behavior of cube-textured polycrystalline nickel at various oxidation conditions. Cube-textured NiO film was formed on a cube-textured polycrystalline nickel regardless of oxidation conditions but different growth behavior of NiO crystals was observed depending on the oxidation conditions. The introduction of water vapor into $O_2$ did not affect the texture evolution, but rough and porous microstructure was developed. Microstructure of NiO film tends to be denser as the oxygen partial pressure increases. It is interesting that (111) peak of theta - two theta diffraction pattern started to get stronger in air atmosphere and (111) plane became the major texture in the substrate oxidized in high purity argon gas. Small amount of high index crystallographic plane NiO peak crystal was observed when $N_{2}O$ was used as an oxidant while only (200) plane crystal was formed in dry $O_2$ atmosphere. Flat and smooth surface was changed into rough faceted one when ramping rate to oxidation temperature was faster. The grain size of NiO was decreased when the oxygen partial pressure was low. It was also observed that the modification of nickel surface suppressed the development of (200) texture.