• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.79-83
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• 2009

In this study, the characteristics of amorphous silicon etching for the formation of gate electrodes have been evaluated at the variation of several process parameters. When total flow rates composed of $Cl_2/HBr/O_2$ gas mixtures increased, the etch rate of amorphous silicon layer increased, but critical dimension (CD) bias was not notably changed regardless of total flow rate. As the amount of HBr in the mixture gas became larger, amorphous silicon etch rate was reduced by the low reactivity of Br species. In the case of increasing oxygen flow rate, etch selectivity was increased due to the reduction of oxide etch rate, enhancing the stability of silicon gate etching process. However, gate electrodes became more sloped according to the increase of oxygen flow rate. Higher source power induced the increase of amorphous silicon etch rate and CD bias, and higher bias power had a tendency to increase the etch rate of amorphous silicon and oxide.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.291-294
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• 2002

The reactions of triplet oxygen atom with halomethanes as a potential fire extinguisher were studied by a discharge flow-chemiluminescence imaging method. The experiments were carried out under second order conditions. The bimolecular atom-molecule reaction rate constants were determined in terms of the initial rate method. The initial concentration of oxygen atom was also determined under second order rate law instead of the pseudo-first order conditions with $[O(^3P)]_0{\ll}[sample]_0$. The second order conditions were more reliable than pseudo-first order conditions for the determinations of rate constants. The rate constants of the reactions $CF_3I\;+\;O(^3P)$, $CH_3PI\;+\'O(^3P)$, and $CHBrCl_2\;+\;O(^3P)$ were determined to be $5.0\;{\times}\;10^{-12}$ , $1.1\;×\;0^{-11}$ , and $1.9\;{\times}\;10^{-14}cm^3molecule^{-1}s^{-1}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Journal of Information Display
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• v.2 no.1
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.6
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• pp.82-91
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• 2021

We compared the heat transfer characteristics of the parallel and the counterflow flow in the concentric double tube of the Al₂O₃/water nanofluids using numerical methods. The high- and low-temperature fluids flow through the inner circular tube and the annular tube, respectively. The heat transfer characteristics according to the flow direction were compared by changing the volume flow rate and the volume concentration of the nanoparticles. The results showed that the heat transfer rate and overall heat transfer coefficient improved compared to those of basic fluid with increasing the volume and flow rate of nanoparticles. When the inflow rate was small, the heat transfer performance of the counterflow was about 22% better than the parallel flow. As the inflow rate was increased, the parallel flow and the counterflow had similar heat transfer rates. In addition, the effectiveness of the counterflow increased from 10% to 22% rather than the parallel flow. However, we verified that the increment in the friction factor of the counterflow is not large compared to the increment in the heat transfer rate.

• Journal of Biomedical Engineering Research
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• v.26 no.4
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• pp.193-197
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• 2005

Shunt valves used to treat patients with hydrocephalus were tested to investigate influence of intracranial pressure pulsation on their flow control characteristics. Five commercial shunt valves were tested in the flow loop that simulates pulsed flow under pressure pulsation. As 20cc/hr of flow rate was adjusted at a constant pressure, application of $40mmH_2O$ of pressure pulse increased the flow rate by $67.9\%.$ As a 90cm length catheter was connected to the valve outlet, increase in the flow rate was substantially reduced to $17.5\%.$ As the flow rate was adjusted to 40cc/hr at a constant pressure, increase in the flow rate was $51.1\%$ with the same pressure pulsation of $40mmH_2O$. The results indicated that pressure-flow control characteristics of shunt valves implanted above human brain ventricle is quite different from those obtained by syringe pump test at constant pressures right after manufacture. The influence of pressure pulsation was observed to be more significant at low flow rate and the flexibility of the outlet silicone catheter was estimated to significantly reduce flow increase due to pressure pulsation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• Journal of Powder Materials
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• v.11 no.1
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• pp.50-54
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• 2004

Nanoparticles of iron oxides have been prepared by the levitational gas condensation (LGC) method, and their structural and magnetic properties were studied by XRD, TEM and Mossbauer spectroscopy. Fe clusters were evaporated from a surface of the levitated liquid Fe droplet and then condensed into nanoparticles of iron oxide with particle size of 14 to 30 nm in a chamber filled with mixtures of Ar and $O_2$ gases. It was found that the phase transition from both $\gamma$-$Fe_2O_3$ and $\alpha$-Fe to $Fe_3O_4$, which was evaluated from the results of Mossbauer spectra, strongly depended on the $O_2$ flow rate. As a result, $\gamma$-$Fe_2O_3$ was synthesized under the $O_2$ flow rate of 0.1$\leq$$Vo_2$(Vmin)$\leq$0.15, whereas $Fe_3O_4$ was synthesized under the $O_2$, flow rate of 0.15$\leq$$Vo_2$(Vmin)$\leq$0.2.