• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.291-294
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• 2002

The reactions of triplet oxygen atom with halomethanes as a potential fire extinguisher were studied by a discharge flow-chemiluminescence imaging method. The experiments were carried out under second order conditions. The bimolecular atom-molecule reaction rate constants were determined in terms of the initial rate method. The initial concentration of oxygen atom was also determined under second order rate law instead of the pseudo-first order conditions with $[O(^3P)]_0{\ll}[sample]_0$. The second order conditions were more reliable than pseudo-first order conditions for the determinations of rate constants. The rate constants of the reactions $CF_3I\;+\;O(^3P)$, $CH_3PI\;+\'O(^3P)$, and $CHBrCl_2\;+\;O(^3P)$ were determined to be $5.0\;{\times}\;10^{-12}$ , $1.1\;×\;0^{-11}$ , and $1.9\;{\times}\;10^{-14}cm^3molecule^{-1}s^{-1}$, respectively.

• 한국세라믹학회지
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• 제36권7호
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• pp.742-750
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• 1999

화학기상응축법을 이용한 TiO2 나노분말합성시 전구체 주입속도 및 산소 반응기체유량의 변화에 따른 나노입자의 형성과정을 분말특성의 관점에서 조사하였다. 기상합성반응의 주요 열역학, 동역학적 인자인 과포화도, 충돌율, 체류시간의 상기 두 공정변수에 대한 의존성을 이론적으로 평가하였고, 이를 0.376, 0.742 m//min의 두 전구체 주입속도 조건에서 산소유량을 1에서 2slm까지 변화시키며 합성한 TiO2 나노분말의 특성과 관련하여 분석하였다 모든 조건에서 합성된 TiO2 분말은 20~30 nm의 크기를 갖는 미세한 anatase 상과 극소량의 rutilc상이 혼합되어 서로 느슨한 결합을 하고 있었다 전구체 주입속도가 0.376m//min의 경우, 전반적인 입도와 응집도는 0.742 m//min에 비해 작았으며, 산소유량이 증가할수록 체류시간과 충돌율이 감소하여 형성된 TiO2 분말의 입도는 감소하였다. 또한 산소유량 증가에 따른 과포화도의 감소는 분말형성과정과 기구에 영향을 미치는 것으로 판단되나, 정확한 분석을 위해서는 각각의 독립적인 열역학 및 동역학적 변수 조건하에서의 면밀한 고찰이 요구되었다.

• 상하수도학회지
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• 제19권3호
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• pp.348-356
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• 2005

Water quality sampling surveys and continuous measurement of flow were conducted to identify wastewater flow characteristics for representative catchment of O and M treatment basins in A city. For HS-1 station representing commercial area, wastewater flow rises in the beginning of office-working hours, moves up and down within narrow range, and lasts till office-leaving hour, and falls gradually reflecting worker's returning home. However, in HS-2 station representing residential area, wastewater flow has two peaks, which are before office-going hour and after office-leaving hour. In residential area, the flow rate of weekends is higher than that of weekdays because it reflects population, being not contributed to generate wastewater during the working hours of weekdays, stay home and produce wastewater for weekends period. To determine the priority for rehabilitation of sewer system, infiltration rate was computed by dividing infiltration flow by mean diameter and total length of sewer, and HS-1 station ranked the first.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• 산업기술연구
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• 제17권
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• pp.241-247
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• 1997

A numerical model has been proposed for a diffusion flame reactor to manufacture ultrafine $TiO_2$ powders. The model equations such as mass balance equation, the 0th, 1st, and 2nd moment equations of aerosols were considered. The phenomena such as $TiCl_4$ reaction rate, $TiO_2$ nucleation rate and the coagulation of $TiO_2$ powders were included in the aerosol dynamic equation. It is found that the $TiO_2$ particle concentration becomes higher, as the inlet $TiCl_4$ concentration and the total gas flow rate increase, and also as the flame temperature decreases. The $TiO_2$ particle size increases, as the flame temperature and the inlet $TiCl_4$ concentration increase and the total gas flow rate decreases.

• Korean Chemical Engineering Research
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• 제47권1호
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• pp.79-83
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• 2009

본 연구에서 고밀도 플라즈마 식각 장치를 사용한 비정질 실리콘 막의 게이트 전극선 형성공정에서 여러 가지 식각 변수가 치수 제어와 식각 속도 및 식각 선택비 등 식각 특성에 미치는 영향을 분석하였다. $Cl_2/HBr/O_2$로 구성된 식각 기체의 전체 유량을 증가시키면 비정질 실리콘의 식각 속도가 증가하나 식각 전후의 형상치수는 변화없이 거의 일정하였다. 전체 유량을 고정시키고 $Cl_2$와 HBr 간의 유량비를 변화시키면 HBr의 유량이 커질수록 비정질 실리콘의 식각 속도가 감소하였다. $O_2$의 유량을 증가시키면 산화막의 식각 속도가 상대적으로 낮아져 식각 선택비를 증가시켜 식각 공정의 안정성을 높이나 게이트 전극선을 경사지게 하는 특성을 보인다. Source power의 증가는 비정질 실리콘 식각 속도의 증가와 더불어 형상치수의 증가를 가져오며, bias power의 증가는 비정질 실리콘과 산화막의 식각 속도를 증가시키나 식각 선택비를 크게 감소시키는 경향을 보였다.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• 방사성폐기물학회지
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• 제18권3호
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• pp.355-362
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• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.

• International Journal of Air-Conditioning and Refrigeration
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• 제15권3호
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• pp.114-121
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• 2007

In this study, a modified reverse flow type, one of the triple effect absorption cycles, is studied for performance improvement. The cycle simulation is carried out by using EES(Engineering Equation Solver) program for the working fluid of $H_2O/LiBr$ solution. The split-ratios of solution flow rate, UA of each component, pumping mass flow rate of solution are considered as key parameters. The results show that the optimal SRH (split ratio of high side) and SRL (split ratio of low side) values are 0.596 and 0.521, respectively. Under these conditions, the COP is maximized to 2.1. The optimal pumping mass flow rate is selected as 3 kg/s and the corresponding UAEV A is 121 kW/K in the present system. The present simulation results are compared to the other literature results from Kaita's (2002) and Cho's (1998) triple effect absorption systems. The present system has a lower solution temperature and a higher COP than the Kaita's modified reverse flow, and it also gives a higher COP than the Cho's parallel flow by adjusting split ratios.