• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.446-450
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• 2001

In this study, microstructural and electrical properties of (Pb)(La,Nd)$TiO_3$ cerramics were investigated as a function of CuO addition. Taking into consideration Tc of $325^{\circ}C$, dynamic range of 49dB( at the wafer form) and density of $7.71g/cm^{3}$, it can be concluded that the specimen S2 sintered at $1200^{\circ}C$ is the best for the resonator application, Dynamic characteristics of energy-trapped 20MHz SMD type resonator as a function of internal dot size variation were also investigated. Dynamic range characteristics showed the highest value of 60.72dB at S2-4(dot size 1.13mm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.446-450
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• 2001

In this study, microstructural and electrical properties of (Pb)(La,Nd)TiO$_3$ ceramics were investigated as a function of CuO addition. Taking into consideration Tc of 3$25^{\circ}C$, dynamic range of 49dB( at the wafer form) and density of 7.71g/㎤, it can be concluded that the specimen S2 sintered at 120$0^{\circ}C$ is the best for the resonator application. Dynamic characteristics of energy-trapped 20MHz SMD type resonator as a function of internal dot size variation were also investigated. Dynamic range characteristics showed the highest value of 60.72dB at S2-4(dot size 1.13mm).

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2761-2764
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• 2011

A new Ruddlesden-Popper phase $NdSr_2MnCrO_7$ has been prepared by the standard ceramic method. The powder X-ray diffraction studies suggest that the phase crystallizes with tetragonal unit cell in the space group I4/mmm. The electrical transport properties show that the phase is an electrical insulator and the electrical conduction in the phase occurs by a 3D variable range hopping mechanism. The magnetic studies suggest that the ferromagnetic interactions are dominant.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.417-424
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• 1994

PbNb$_{2}$O$_{6}$ piezoelectric ceramics have good properties, but the applications of them have been limited due to the problems of microstructures. In the present study, effects of additives on the phase stability, microstructure, and electrical proper-ties of ferroetectric phase were investigated. La$_{2}$O$_{3}$, Nd$_{2}$O$_{3}$ and Sm$_{2}$O$_{3}$ were added with the amounts of 1, 3, 5 mol% respectively. The results showed that single orthorhombic(ferroelectric phase) phase compared with the mixed phase of pure PbNb2O6 was obtained. In the case of 5 mol% Nd$_{2}$O$_{3}$ addition, relative density of >95% and dense microstructure with -2.mu.m grain size were obtained.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.913-916
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• 2001

From 1994 the cooperation between NEU of China and MJU of South Korea for study of ReBaCuO (Re=Rare earth elements) superconductors has been carried out. The progress has been got in following projects. Critical current density ($J_c$) of YBaCuO superconductor prepared by Melting Textured Growth (MTG) was improved. In the preparation of textured YBaCuO, 20 wt.% of YBaCuO 211 phase was added, which would be climactic for the microcracks in the textured YBaCuO. The effects of the 211 phase and Ag content on the superconductivity were studied and discussed in detail. The improved $J_c$ value was reached to 8$\times$10^4 A/cm^2 (77K,0T). Single phase $YbBa_{2}Cu_{3}O_{x}$ superconductor was sintered by the traditional powder metallurgical method, and its reaction process was studied. In recent years, NdBaCuO superconductor is being performed. The behavior of $Nd_{4}Ba_{2}Cu_{2}O_{10}$(Nd422 phase) and the solid solubility, x in the superconductor $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ by the heat treatment in the low oxygen partial pressure (1%) or Ar at $950{\circ}C$ were investigated. The zone-melting process was used to make oriented NdBaCuO superconductor in order to increase the critical current density.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.609-614
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• 2001

This study was carried out to obtain a basic data on the production of the Nd-Fe-B system rare earth anisotropic bonded magnet by R-D & HDDR process. The reduction reaction of Nd$_2$O$_3$by metallic Ca and the diffusion reaction of Nd into Fe-B alloy powder were investigated for the production the Nd-Fe-B alloy powder. We concluded that a proper quantity of metallic Ca was about 1.3 times of theoretical equivalent from the yields of Nd and B after the R-D reaction at 100$0^{\circ}C$ for 1h. In the XRD analysis the diffusion reaction of Nd into the center of Fe-B alloy powder for the completed homogenization was required through about 45min at 110$0^{\circ}C$ for the R-D reaction, and also the maximum efficiency on the yield of Nd was obtained with such a condition. Residual Ca and oxygen contents of the final powder sample after washing were detected in 0.17wt% and 0.42wt% by ICP and oxygen analyzer, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.211-211
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• 2010

지난 수년간 비휘발성 메모리는 휴대용 전자기기 시장의 증가로 인해 많은 주목을 받아왔다. 그러나 현재 주로 쓰이고 있는 다결정 실리콘을 부유게이트층을 이용한 소자는 한계점을 보이고 있다. 이러한 이유로 최근에는 반도체 나노점이나 금속 나노점을 이용하는 비휘발성 메모리가 각광을 받고 있다. 이 메모리들은 빠른 쓰기/지우기 속도, 긴 저장시간, 낮은 구동전압 등의 이점을 지니고 있다. 본 연구에서는 이온빔 스퍼터링 방법을 이용해 $SiO_2$/Zr nanodots (ND)/$SiO_2$ trilayer 구조를 제작하였다. tunnel oxide와 control oxide의 두께는 각각 3nm, 15nm 이며 Zr의 양을 변화시키며 그에 따른 Zr ND과 메모리 효과의 변화를 관찰하였다. 고분해능 전자현미경과 광전자 분광기를 이용해 Zr ND의 형성을 확인하였고 열처리 후 $ZrO_2$ ND로 상이 변화함을 관찰하였다. -10 ~ +10V의 측정 조건 하에서 Zr의 양이 증가함에 따라 메모리 폭은 최대 5.8V까지 증가하였다. 또한 쓰기 상태에서 메모리 폭과 전하 손실비율은 열처리 후가 감소하였고 이는 $SiO_2$와 Zr ND의 계면에서 생성되는 $ZrO_2$의 영향인 것으로 생각된다.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.9-13
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• 2001

The effects of glass addition on the densification and the microwave properties of $(Ba_{0.5}Pb_{0.5})Nd_2Ti_5O_{14}$ dielectric system were studied. When 2~3 wt% of borosilicate glass were added, the density increased and the better microwave properties were obtained. When a sample was sintered at $950^{\circ}C$ with 3 wt% of glass, the quality factor and the temperature coefficient of the resonant frequency of the specimen were 4500 and +10 $ppm/^{\circ}C$, respectively. The dielectric constant, however, decreased from 90 to 75 with glass addition.