• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.488-494
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• 1988

Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.320-321
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• 2005

The $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C\sim1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor and temperature coefficient of the resonant frequency were 19.30, 14,662GHz, +4.1$8ppm/^{\circ}C$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.115-116
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• 1992

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.20-29
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• 1992

In $BaTiO_3-NaNbO_3$ system, complete series of solid solution occurs and $30BaTiO_3{cdot}70NaNbO_3$ composition is congruently melted. Single crystals of $30BaTiO_3{cdot}70NaNbO_3$, composition were grown by Czochralski method in this investigation. Single crystals with dimensions of 15 - 20mm diameter and 20 - 30mm length, were grown at the pulling rate of 2.0mm/h and the rotation rate of 5.0 -l0rpm. Core structures were found in the grown crystals and inclusions, cellular boundaries existed at the core region. The origin of core occuring was unstability of the crystal- melt interface due to the poor conductivity of latent heat through the crystal during the crystal growing process. Obtained crystals were optically homogeneous except the core region and showed high optical transmittance in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.25-28
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• 1999

Metal ferroelectric semiconductor Field Effect- Transistors(MFSFET) with various gate electrodes, that are aluminum, platinum and poly -Si, using LiNbO$_3$/Si(100) structures were fabricated and the properties of the FETs have been discussed. The drain current of the state of FET with Pt electrode was more than 3 orders of magnitude larger than the state current at the same gate voltage of 1.5 V, 7.rich means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10$^3$s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.305-305
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• 2010

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric transformer application (Na,K)(Nb,Sb)$O_3$ ceramics were fabricated using conventional oxides mixed method and their piezoelectric and dielectric characteristics were investigated according to the amount of $Bi_2O_3$ addition.

• Economic and Environmental Geology
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• v.30 no.5
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• pp.395-406
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• 1997

Some RE (Zr, Nb, REE) ore deposits are located in the middle part of the Korean peninsula. Geotectonically, the RE ore deposits situated on the Kyemyeongsan Formation of northern margin of the Okcheon geosynclinal belt and in the transitional zone between Kyeonggi massif and Okcheon belt. The rare metal deposits distributed in Kyemyeongsan Formation which consists of schist and alkaline granite. The alkali granite has suffered extensive post-magmatic metasomatism and hydrothermal processes. The ore contains mainly Ce-La, Ta-Nb, Y, Y-Nb, Ti-Nb-(U), Nd-Th group minerals. Fergusonite, one of Nb-Y rich REE minerals belonging to the A-B oxides, is most common mineral in the rare metal deposits. The fergusonite bearing rocks may be devided into four types by occurrence features and mineral association, that is, zircon type, allanite vein, feldspar type, and fluorite type. Fergusonites show wide variations in optical properties, due to part of differences in their chemical composition (depending on the types), but also the degree of crystalinity of the individual specimens. Fergusonite metamicts enclosed in biotite are generally surrounded by well developed pleochroic haloes. Usually, fergusonite is accompanied with zircon and other REE-bearing minerals. Petrographical and chemical data are presented for fergusonites which collected different types. $Nb_2O_3$ and $Y_2O_3$ contents range from 48.51 to 53.01 wt.% and 29.18 to 42.02 wt.% respectively. Also, $ThO_2$, (1.83~6.93), $UO_2$, (0.17~2.84), ${\sum}RE_2O_3$ (except to Y) (1.11~8.73), and $TiO_2$, (0.19~1.19 wt.%) contents show variational compositions according to fergusonite types. The ${\sum}RE_2O_3$ of fergusonites are positive relation with $Y_2O_3$ and negative relaton with $ThO_2$ and $({\sum}{RE_2O_3}-{Y_2O_3})$. The $Nb_2O_3$ is sightly negative relation with $Ta_2O_3$. Back-scattered electron microscope images (BEI) of fergusonite show the mineral composition and textural feature is very complicated. The variation of Nb, Th and REE content of fergusonite and the modes of occurrence of mineral, suggests that REE may have been mobilized during the circulation of hydrothermal fluids related to contact metamorphism (metasomatism). The chemical variation of the fergusonites with occurrences and mineral association can be related to metasomatism of alkaline fluid was probably the dominant ore-forming process in Chungju district.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.15-18
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• 1979

Deposited film of a transition metal, Ti was diffused into LiNbO3 crystals to form integrated optical waveguides. By suppressing L O out -diffusion, single-mode waveguides could be constructed. Measurements on characteristics were performed by using the prise coupling technique and a He-Ne laser. ( λ = 0.6328 $\mu$m)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.63-66
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• 1998

Prototype MFSFET′s using ferroelectric oxide LiNbO$_3$ as a gate insulator have been successfully fabricated with the help of 2 sheets of metal masks and demonstrated nonvolatile memory operations of the MFSFET′s. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 $\textrm{cm}^2$/V.s and 0.16 mS/mm, respectively. The drain current of the "on" state was more than 4 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET. A write voltage as low as $\pm$3 V, which is applicable to low power integrate circuits, was used for polarization reversal.