• Title/Summary/Keyword: $Nb_{2}O_{5}$addition

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Influence of $TiO_2$ on the dielectric properties of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramics for low-firing (저온소결용 $Bi(Nb_{0.7}Ta_{0.3})O_4$ 세라믹스의 유전특성에 미치는 $TiO_2$ 영향)

  • Kim, Dae-Min;Yoon, Sang-Ok;Kim, Kwan-Soo;Kim, Shin;Kim, Jae-Chan;Kim, Kyung-Joo;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.298-298
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    • 2007
  • Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

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Structural properties of $Zn:LiNbO_3/Mg:LiNbO_3$ single crystal thin films grown by LPE method (LPE법으로 성장시킨 $Zn:LiNbO_3/Mg:LiNbO_3$ 단결정 박막의 구조적 특성)

  • Lee, H.J.;Shin, T.I.;Lee, J.H.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.3
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    • pp.120-123
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    • 2005
  • The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).

Effects of Nb2O5 Addition on Microstructure and Piezoelectric Characteristics of PNW-PMN-PZT Ceramics for Piezoelectric Transformer Driving PDA CCFL (PDA CCFL 구동을 위한 압전트랜스포머 용 PNW-PMN-PZT 세라믹스의 Nb2O5 첨가에 따른 미세구조 및 압전특성)

  • 류주현;황락훈;김철희;오동언;장은성;정영호;홍재일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.289-293
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    • 2004
  • PNW-PMN-PZT ceramics were fabricated with the variations of Nb$_2$O$_{5}$ addition and their microstructural and piezoelectric characteristics were investigated. When the amount of Nb$_2$O$_{5}$ increased, grain size decreased gradually. At 0.3wt% Nb$_2$O$_{5}$ which is the same weight percent with Fe$_2$O$_3$, maximum tetragonality(c/a) and density were shown due to the complexed doping effects. Also, this composition that showed Qm of 2,041, kp of 0.55, grain size of 2.5${\mu}{\textrm}{m}$ and $\varepsilon$r of 1704 were proper for high power application. Using this composition, Rosen-type piezoelectric transformer was fabricated as the size of 1 ${\times}$ 16 ${\times}$ 5㎣ and its electrical characteristics were investigated with the variations of load resistance and driving frequency. At the resistance of 200㏀, maximum step-up ratio of 13.68 was shown. After driving PDA CCFL for 25 min using the inverter circuit, at driving frequency of 214.4KHz, input voltage of 31.78 V and input current of 21.1mA were measured at the input part of piezoelectric transformer. And then, output voltage of 293.2 V and output current of 2.2mA were shown at the output part of piezoelectric transformer. At the same time, efficiency of 96.2% and temperature rise of 3.5$^{\circ}C$ were appeared at the piezoelectric transformer.ormer.

A Study on the Characteristics of TiO2-Nb2O5 Semiconductor Oxides Using Dye-Sensitized Solar Cell (TiO2-Nb2O5 반도체 산화물을 이용한 염료 감응 태양전지 특성개선연구)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.538-542
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    • 2019
  • Semiconductor oxides such as $TiO_2$ involved in light conversion efficiency are the main elements of dye-sensitized solar cells (DSSC) and are used to mix different semiconductor oxides to improve efficiency. In this research, characteristics of the dye-sensitive solar cell are studied using semiconductor oxide formed by mixing $TiO_2$ and $Nb_2O_5$. A solar cell is manufactured by adding $Nb_2O_5$ at different ratios in order to analyze electrical characteristics of a mixed semiconductor oxide on light conversion efficiency. With the addition of $Nb_2O_5$, the conductivity was further enhanced than the recombination phenomenon caused by contact with electrolytes, confirming the improve of short-circuit, open voltage, and conversion efficiency of solar cells.

Low-temperature phase stability and mechanical properties of $Y-Nb-TZP/Al_2O_3$ compoites ($Y-Nb-TZP/Al_2O_3$ 복합체의 저온 상안정성 및 기계적 특성)

  • 이득용;김대준;조경식;장주웅
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.634-639
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    • 1998
  • $Y_2O_3$ and $Nb_2O_5$ co-doped zirconia composites containing 10~30 vol% $Al_2O_3$ with two different particle sizes were sintered for 5 h at $1550^{\circ}C$ to evaluate low-temperature phase stability of the composite using X-ray diffractometry after heat-treatments for 1000 h at $250^{\circ}C$ in air or for 5 h at $180^{\circ}C$ in 0.3 MPa $H_2O$ vapor pressure. No tetragonal to monoclinic phase transformation during degradation, so called enhanced low-temperature phase stability, was observed for all composites. It is concluded that Nb addition to the composite for the phase stability is more effective than $Al_2O_3$ addition. The optimum combination of strength (670 MPa) and fracture toughness ($7.1{\textrm} {MPam}^{1/2}$) were obtained for the composite containing 20 vol% of $Al_2O_3$ with 2.8 $\mu$m to 0.2 $\mu$m, the flexural strength increases but the fracture toughness decreases.

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Electrical Properties of Piezoceramic PZT with $Nb_2O_5$ Dopant ($Nb_2O_5$를 첨가한 압전 세라믹 PZT의 전기적 특성)

  • Park, J.H.;Choi, H.I.;SaGong, G.
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.336-338
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    • 1991
  • Effects of $Nb_2O_5$ addition ranged from 0.0 to 0.75(wt%) on the microstructure and electrical porperties of PZT ceramics have been investigated. The Pb vacancy concentration increases with increasing NbO content. However, the experimental results show the resistivity increases with increasing $Nb^{5+}$ content. This behavior can be explained as a compensation effect and $Nb^{5+}$ can serve as a donar and contribute electrons to the conduction process. According to the law of mass action, this result may reduce the total charge carrier:thus the resistivity increase with NbO content in PZT.

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Preparation of the mixed oxide photocatalyst and its quantum yield. (Mixed oxide 광촉매의 제조 및 광분해 효율 평가)

  • Kim, Dong H.;Lee, Tai K.;Kim, Kyung N.;Chungmoo Auh;Kim, Kwang B.;Lee, Seung W.
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1995.05a
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    • pp.45-52
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    • 1995
  • The photocatalytic activity of TiO$_2$ was investigated as a function of added amount of Nb$_2$O$_{5}$, heat treatment temperature and the decomposition rate of 1 mM dichloroacetic acid(DCA). Mixed oxides of TiO$_2$ and Nb$_2$O$_{5}$ was prepared by the sol-gel process. The addition of Nb$_2$O$_{5}$ into TiO$_2$ has deleterious effect on the decomposition rate of DCA, which was decreased as the amount of Nb$_2$O$_{5}$ was increased. The excess electrons due to the doping of Nb$_2$O$_{5}$ into TiO$_2$ can promote the reduction process instead of oxidation or recombination rate with electron holes. The most efficient photocatalyst was the one heat treated at 40$0^{\circ}C$ for an hour as far as the heat treatment temperature is concerned. The lower the pH of the solution, the higher the quantum yield.tum yield.

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Microstructure and Dielectric Properties in $40Pb(Mg_{1/3}Nb_{2/3})O_3-30PbTiO_3-30Pb(Mg_{1/2}W_{1/2})O}3$ Ceramics with Excess $91PbO-9WO_3$ Addition ($91PbO-9WO_3$가 과잉첨가된 $40Pb(Mg_{1/3}Nb_{2/3})O_3-30PbTiO_3-30Pb(Mg_{1/2}W_{1/2})O}3$계 세라믹스의 미세구조와 유전특성)

  • 길영배;이응상
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.281-288
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    • 1997
  • The effects of 0 to 6 mol% excess 91PbO-9WO3 addition on the microstructure and the dielectric pro-perties in 40Pb(Mg1/3Nb2/3)O3-30PbTiO3-30Pb(Mg1/2W1/2)O3 ternary system were investigated. Excess 91PbO-9WO3 addition enhanced densification at relatively lower temperature due to the formation of liquid phase. The dielectric constant of the specimen with standard composition was 16,400 and that of specimen with 1 mol% excess additive was the maximum of 18,500. And more than 2 mol% excess addition decreased dielec-tric constant. Specimens with 2~4 mol% 91PbO-9WO3 addition showed dual peak maxima in the tem-perature dependence of dielectric constant. In the specimens which have more than 5 mol% excess addition a new phase with W-rich composition was formed at grain boundary.

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Low Temperature Sintering and Dielectric Properties of BiNbO4 and ZnNb2O6 Ceramics with Zinc Borosilicate Glass

  • Kim, Kwan-Soo;Kim, Shin;Yoon, Sang-Ok;Park, Jong-Guk
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.201-205
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    • 2007
  • Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

Low Temperature Sintering and Dielectric Properties of $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with (ZBS, BZBS) glasses (붕규산염 유리 첨가에 따른 $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$의 저온 소결 및 유전 특성)

  • Kim, Kwan-Soo;Park, Jong-Guk;Yoon, Sang-Ok;Kim, Shin;Kim, Yun-Han;Kang, Suk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.342-342
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    • 2008
  • The low temperature sintering and microwave dielectric properties of ceramic/glass composites which were composed of ceramics in the $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ and zinc borosilicate glass/bismuth-zinc borosilicate glass were investigated with a view to applying the microwave dielectrics to low temperature co-fired ceramics. The $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ addition of 5 wt% ZBS and BZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, pyrochlore phase was observed in the all composition. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with 5 wt% BZBS glasss demonstrated 70 as the dielectric constant ($\varepsilon_r$), 2,500 GHz as the Q$\times$f value, and -40 ppm/$^{\circ}C$ as TCF.

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