• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.41-42
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• 2002

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1221-1226
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• 1997

The effects of sintering atmosphere and dopant addition on the behavior of densification and grain growth of SnO2 ceramics were investigated with consideration of defect chemistry. CoO and Nb2O5 were chosen as dopants, and oxygen and nitrogen were used for controlling of sintering atmospheres. With the decrease of oxygen partial pressure, densification was depressed due to evaporation of SnO2 ceramics. In the case of SnO2 sintering, the addition of CoO, which produced oxygen vacancy in SnO2 ceramics, led to acceleration of densification and grain growth. On the contrary, when Nb2O5 as a dopant producing Sn vacancy was added to SnO2 ceramics, densification and grain growth were simultaneously retarded. As results, it was conformed that diffusion of oxygen ions was rate determinant in densification and grain growth of SnO2 ceramics.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.308-313
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• 2001

We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.657-661
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• 2002

PZT powder was prepared by partial oxalate method using $(Zr_{0.53}Ti_{0.47})O_2$, $Pb(NO_3)_2$ and $(COOH)_2{\cdot}2H_2O$ as a precipitant. $Nb_2O_5$ additive effect on microstructure and piezoelectric properties of PZT ceramics were investigated. The coexistence of rhombohedral and tetragonal phases of PZT ceramics at the sintering temperature of $1100^{\circ}C$ was revealed from the X-ray diffraction patterns. The grain size PZT ceramics was decreased with the increase $Nb^{5+}$. and the sinterbility of PZT ceramics was decreased with the increase $Nb^{5+}$ addition. The electromechanical coupling factors $K_p$ show above 0.60 at $1100^{\circ}C$ sintering temperature by $Nb_2O_5$ addition above 0.6mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.925-929
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• 2009

In this study, $0.95(K_{0.5}Na_{0.5})NbO_3-0.05Li(Sb_{0.8}Nb_{0.2})O_3$ ceramics were investigated as a function of the amount of $Ag_2O$ addition in order to improve dielectric and piezoelectric properties of lead-free piezoelectric ceramics. With increasing the amount of $Ag_2O$ addition, density and electromechanical coupling factor ($k_p$) increased up to 0.2 wt.% $Ag_2O$ and decreased above 0.2 wt.% $Ag_2O$. At the sintering temperature of $1020^{\circ}C$, electromechanical coupling factor ($k_p$), density, dielectric constant (${\varepsilon}r$) and curie temperature (Tc) of ceramics with 0.2 wt% $Ag_2O$ showed the optimal values of 0.42, $4.33\;g/cm^3$, 738 and $393^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.489-494
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• 2009

In this study, In order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics, $0.95(K_{0.5}Na_{0.5})NbO_3-0.05Li(Sb_{0.8}Nb_{0.2})O_3+0.2\;wt%Ag_2O+0.4\;wt%MnO_2+Xwt%CuO$ were investigated as a function of the amount of CuO addition. With increasing the amount of CuO addition, density was increased up to 0.4 wt.% CuO and then decreased above. And also, electro mechanical coupling factor ($k_p$) was decreased. At the 0.4 wt% CuO added specimen sintered at $1020^{\circ}C$, $k_p$, Qm, density, dielectric constant (${\varepsilon}_r$) and $d_{33}$[pC/N] showed the optimal value of $4.37\;g/cm^3$, 0.354, 305, 645, and 144 pC/N respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.676-680
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• 2003

In this study, to develop the low temperature sintering ceramics for piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of V$_2$O$_{5}$ addition, that is the low melting point oxide. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of V$_2$O$_{5}$ addition, electromechanical coupling factor(kp) and mechanical quality factor(Qm) were decreased. For piezoelectric transformer application, the 0.1wt% V$_2$O$_{5}$ added specimen sintered at 1,00$0^{\circ}C$ showed the proper value of $\varepsilon$r=1,590, kp=0.51 and Qm=748.m=748.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.333-336
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• 2005

The reduction behavior of $Nb_2O_5$ in aluminum containing self-reducing briquettes(SRNB) was investigated. The time required for slag/metal equilibrium was estimated as about 20 minutes from the addition of SRNB on to the surface of molten steel. The maximum yield of Nb was expected with the slag composition of $60\%CaO-40\%Al_2O_3$. When $CaCO_3$ was used as a flux, the oxidation loss of Al by $CO_2$ should be compensated, and the chemical equivalent ratio of Al to $Nb_2O_5$ of about 1.43 was required to maximize the yield of Nb.