• Journal of the korean academy of Pediatric Dentistry
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• v.43 no.4
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• pp.435-442
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• 2016

The aim of this study was to analyze physiological changes, clinical and subjective symptoms by different $N_2O$ concentrations and administration method. This study surveyed 65 men and women ages 19 to 35 and all subjects were healthy volunteers, with no contraindication for use of $N_2O$ sedation. The $N_2O$ sedation was carried out in a way that increases by 10 percent to one-minute interval or increases at once the desired level. Each method was required to reach 30 or 50 percent $N_2O$ concentration. The way to gradually raise the $N_2O$ concentration can reduce the risk by decreasing the pulse reduction rate at the same $N_2O$ concentration. $SpO_2$ has no statistical significance according to $N_2O$ concentration and method of administration. Pulse rate reduced significantly when 50% $N_2O$ increase at once during sedation and 100% $O_2$ after 5 minutes. The way to gradually raise the $N_2O$ concentration is safe for reducing pulse rate.

• Journal of Animal Environmental Science
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• v.4 no.1
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• pp.37-45
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• 1998

There are a lot of trace gas of gaseous pollutants produced from farm animals. CO2 and CH4 are gases produced directly by the animal. NH3, N2O are produced from animal waste. Most of the effects of these gaseous pollutants on the farm animals have not been investigated in detail. CO2 emission from animal is very little. CH4 release from ruminant is also considered to be a significant factor in potential global warming. Nitrous oxide (N2O) emissions could be avoided by using organic or mineral fertilizer only as much as is needed by plant growing. This paper gives an overview about problems and solving strategies for possibilities for reduction of gaseous pollutants. The way to reduce the gaseous pollution risks from livestock systems are discussed.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.314-314
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• 2017

Anthropogenic activities have increased the concentrations of greenhouse gases, such as $CO_2$, $CH_4$, $N_2O$, HFCs, $SF_6$, and PFCs, in the atmosphere. Among others, $N_2O$ is well known as an important greenhouse gas accounting for 7.9% of the total greenhouse effect and the effect of its emission is 310 times greater than that of $CO_2$. Agricultural $N_2O$ emissions are now thought to contribute to about 60% of the global anthropogenic $N_2O$ emission, which have been increased primarily due to fertilizer N consumption and manure management. Therefore, the reduction of $N_2O$ emissions in agriculture is being required. This study was conducted to determine the variation of $N_2O$ emissions by no-tillage (NT) and conventional tillage (CT) practices in the cultivation of soybean from the sandy loam soils under the different kinds of fertilizer treatments June through September 2016 in Cheong-ju, Republic of Korea. An experimental plot, located in the temperate climate zone, was composed of two main plots that were NT and CT, and were divided into four plots, respectively, in accordance with types of fertilizers (chemical fertilizer, liquid pig manure, hairy vetch and non-fertilizer). Among all the treatments, $N_2O$ emission was the highest in August and the lowest in June. When $N_2O$ emissions were evaluated during the growing season (June to September) in all fertilizer treatments, NT with hairy vetch treatment emitted the highest $N_2O$ emission in August, whereas, $N_2O$ emissions was the lowest in NT with non-fertilizer treatment in June, respectively (p = 0.05). Based on the cumulative amount of $N_2O$ emissions during the growing season of soybean, NT had lower $N_2O$ emission than CT by 0.01 - 0.02 kg $N_2O$, although NT had higher $N_2O$ emission than CT by 0.03 kg $N_2O$ in only the chemical fertilizer treatments. As a result, it seems that the applications of liquid pig manure and hairy vetch rather than chemical fertilizer could decrease the $N_2O$ emission in NT, compared to CT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.4
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• pp.60-60
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• 2001

칩과 칩 사이의 전송 속도가 증가함에 따라, 누화 및 스위칭 잡음에 의한 시스템의 성능 저하가 심각해지고 있다. 본 논문에서 제안하는 인터페이스는 한 심벌 펄스의 상승/하강 에지 위치에 데이터를 엔코딩하고, 천이 방향이 반대인 P-CTR과 N-CTR (positive/Negative Constant Transition Rate)을 사용하며, P-CTR 드라이버 2개 묶음과 N-CTR 드라이버 2개 묶음을 교대로 배치하여 버스를 구성한다. 제안하는 P/N-CTR 코드 인터페이스에서는 임의의 한 배선에 대해서 양옆의 이웃한 배선 신호가 동시에 같은 방향으로 스위칭하는 경우가 발생하지 않기 때문에 최대 누화 잡음과 최대 스위칭 잡음을 기존의 I/O 인테페이스 보다 감소시킬 수 있다. 제안하는 인터페이스 방식의 잡음 감소 특성을 검증하기 위하여 다양한 배선 구조와 여러 비트 폭의 버스 구조에 적용하고, 0.35㎛ SPICE 파라미터를 이용한 HSPICE 시뮬레이션을 수행하였다. 제안한 인터페이스는 기존의 인터페이스와 비교하여 32 비트 미만의 버스에서는 최대 누화 잡음이 최소26.78 % 감소하고, 누화는 50 % 감소한다.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.673-679
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• 1991

The electrochemical reduction of N-tert-butylbenzothiazole-2-sulfenamide (TBBS; vulcanization accelerator) was investigated by direct current, differential pulse polarography, cyclic voltammetry and controlled potential coulometry. The electrode reduction of TBBS proceeded E-C-E-C reaction mechanism by four electrons transfer at irreversible one wave (-2.31 volts vs. Ag/0.1M AgN$O_3$ in AN). As the results of controlled potential electrolysis, mercaptobenzothiazole (MBT), benzothiazole disulfide (MBT dimer) and extricated sulfur were products which followed by cleavage of the sulfenamide (-S-N=) bond. Upon the basis of products analysis and polarogram interpretation with pH variable, electrochemical reaction mechanism was suggested.

• Journal of the Korean Society of Combustion
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• v.4 no.1
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• pp.27-38
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• 1999

We constructed a wire-cylinder type pulsed corona discharge system for $NO_x$ removal, which was operated in room temperature. A emission spectrometer was built with a boxcar averager and monochrometer equipped with photo-multiplier tube detector. The sensitivity of the emission spectrometer was greatly improved by synchronizing the emission spectrometer with pulsed corona discharge system using a triggered spark-gap switch. $N_2$ spectrum($c^3{\Pi}_u{\rightarrow}X^1{\Sigma}_g{^+}$) was measured in the range of 300 - 450 nm and oxidizing OH radical emission($A^2{\Sigma}^+{\rightarrow}X^2{\Pi}$) was measured in case $N_2$ was supplied with water bubbling. As wet gas composition of inlet $N_2$ supplied in the discharge system increased, the intensity of OH emission was increased and saturated at wet gas composition 50%. We also investigated additive effect of $C_2H_4,\;H_2O,\;H_2O_2$ on the intensity of OR emission and $NO/NO_2/NO_x$ reduction and analysed the related reaction mechanism in corona discharge process. $H_2O_2$ additive increased the intensity of OH emission and $NO/NO_x$ reduction.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.7
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• pp.73-81
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• 1992

We have investigated the thermal reaction property and the oxygen behavior of TiN/Ti/Si structure after different hear treatments using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. During the heat treatment in N$_2$ amibient, the considerable amount of oxygen atoms incorporates into TiN/Ti/Si Structures. It is found that oxygen atoms pile up at the top surface of TiN and TiN/Ti interface, forming a compound of TiO$_2$ above $600^{\circ}C$. Inside the TiN film, the oxygen content increases as the annealing temperature increases, mostly TiO and Ti$_2$O$_3$ rather than thermodynamically stable TiO$_2$. Above the annealing temperature of 55$0^{\circ}C$, the TiSi$_2$ formation has initiated. One thing to note is that a severe blistering is observed in the sample annealed at $600^{\circ}C$, due to (1) the difference of thermal expansion coefficient between TiN and Si` (2) the compressive stress induced by the volume reduction caused by the Ti-Silicide grain while elevating temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• Journal of Powder Materials
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• v.12 no.3
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• pp.192-200
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• 2005

Ultrafine copper powder was prepared from $CuO-H_2O$ slurry with hydrazine, a reductant, under $70^{\circ}C$. The influence of various reaction parameters such as temperature, reaction time, molar ratio of $N_2H_4$, PvP and NaOH to Cu in aqueous solution had been studied on the morphology and powder phase of Cu powders obtained. The production ratio of Cu from CuO was increased with the ratio of $N_2H_4/Cu$ and the temperature. When the ratio of $N_2H_4/Cu$ was higher than 2.5 and the temperature was higher than $60^{\circ}C$, CuO was completely reduced into Cu within 40 min. The crystalline size of Cu obtained became fine as the temperature increase, whereas the aggregation degree of particles was increased with the reaction time. The morphology of Cu powder depended on that of the precursor of CuO and processing conditions. The average particle size was about $0.5{\mu}m$.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.