• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.410-418
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• 1992

Si3N4, AlN and Y2O3 powder mixtures of the Y0.1(Si, Al)12(N, O)16 composition were hot-pressed at 1900℃ for 0 to 60 min under 30 MPa in order to fabricate the partially-stabilized α-Sialon ceramics (X=0.1). Room and high temperature flexural strengths of the specimens were compared with those of Si3N4-5 wt%Y2O3, Si3N4-5 wt%Y2O3-2 wt%Al2O3, and β-Sialon (Z=0.5) ceramics. The flexural strength of the α-Sialon ceramics which was hot-pressed for 15 min showed the highest value of 820 MPa at 1400℃ that is relatively higher temperature. It is guessed that a little amount of glassy phase existed in grain boundary because Y2O3 and AlN components were incoperated in Si3N4 grains, or transient liquid phase sintering, and microstructure with the smaller grain size and the interlocked grains of α'-and β-Si3N4 was obtained by the hot-pressing at high temperature of 1900℃ for the short time (15 min).

• Journal of the Korean Chemical Society
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• v.24 no.1
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• pp.1-7
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• 1980

Solvolysis rate constants for methylchloroformate, methylthionochloroformate, methylthiolchloroformate and methyldithiochloroformate have been determined conductometrically in methanol, ethanol and ethanol-water mixtures and activation parameters have been derived. Results show that methylchloroformate solvolyzes through $S_N2$ process while methyldithiochloroformate solvolyzes by $S_N1$ process in all the solvent systems. The rate of hydrolysis decreased in the order, $CH_3S(CS)Cl>CH_3S(CO)Cl>CH_3O(CS)Cl>CH_3O(CO)Cl$ which corresponds to the order of decreasing $S_N1$ character. In methanol, $CH_3S(CS)Cl$ solvolyzed via the $S_N1$ mechanism while the others solvolyzed via the $S_N2$ process. In ethanol, however, $S_N2$ character was dominant for all the compounds, except methyldithiochloroformate, for which $S_N1$ character was still strong enough to accelerate the rate of ethanolysis. In ethanol-water mixtures, $CH_3S(CS)Cl$ and $CH_3S(CS)Cl$ solvolyzed via $S_N2$ process in ethanol-rich region while the $S_N1$ character increased greatly in water-rich region for the solvolysis of these compounds. The order of $S_N1$ character for solvolysis in water-rich region was the same as the order of hydrolysis rate.

• Nuclear Engineering and Technology
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• v.54 no.9
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• pp.3459-3469
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• 2022

Matrix composites of n-WO₃/n-Bi₂O₃/PVA with different loadings of n-WO₃/n-Bi₂O₃ mixtures (0-15 wt%) and starch (0 and 3 wt%) were fabricated by using melt-mixing method. The X-ray attenuation capability were evaluated based on mass attenuation coefficient (μ/⍴) using a general diagnostic X-ray machine at 40-100 kVp. The effect of starch addition on the dispersion of the fillers in the PVA matrix were observed by using FESEM through morphological analysis. The fabricated samples have shrunken and caused their thickness to be decreased (0.35 mm-0.55 mm) after the drying process even though fixed thickness (2.0 mm) was set initially. The density and HVL values of the samples with 3 wt% starch was seen lower than samples without starch (0 wt%), however the former have provided improvement in filler dispersion and better X-ray attenuation capability compared to the latter. As conclusion, the matrix composite of n-WO₃/n-Bi₂O₃/PVA with 15 wt% of n-Bi₂O₃, 8 wt% of n-WO₃ and 3 wt% starch can be selected as the best promising candidate for X-ray shielding materials.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.300-303
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• 1991

Sulphur-hexafluoride has extensively been used as an insulating gas of electric power equipment in substation for its high dielectric strength, non-toixity and non-flammable properties. But it is very expensive and is liquidizable under the condition of low temperature and high pressure. And it is very sensible to the locally high electric field strength. To resolve these problems, we studied 50% FOV and V-t characteristics of $SF_6-N_2$ mixtures under positive and negative lightning impulses using a 25mm rod-plane gap. 50% FOV of $SF_6-N_2$ 50% mixture was about 85% of pure $SF_6$ and it was known that $SF_6-N_2$ mixtures can be used as an economic substitution insulating gas for $SF_6$.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.7
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• pp.893-900
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• 2003

Numerical simulations of freely propagating flames burning stoichiometric C $H_4$/CHC1$_3$/ $O_2$/$N_2$ mixtures are performed at atmospheric pressure in order to understand the effect of the $O_2$ enrichment level and the CHC1$_3$/C $H_4$ molar ratio. A chemical kinetic mechanism is developed, which involves 69 gas-phase species and 379 forward and 364 backward reactions. The calculated flame speeds are compared with the experiments for the flames established at several CHC1$_3$/C $H_4$ molar ratio (R<1), the results of which is in excellent agreement. As a results of the increased $O_2$ enrichment level from 0.21 to 1, the flame speed and the temperature in the burned gas are increased. At high CHC1$_3$/C $H_4$ molar ratio two peak values appear on the $O_2$ consumption rate, which are affected by CC1$_2$＋ $O_2$$_{-}$>C1O+CC1O and H＋ $O_2$$_{-}$>O＋OH.＋OH.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.383-388
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• 2009

Rates of solvolyses of diphenyl thiophosphorochloridate ($(PhO)_2$PSCl, 1) in ethanol, methanol, and aqueous binary mixtures incorporating ethanol, methanol, acetone and 2,2,2-trifluoroethanol (TFE) are reported. For four representative solvents, studies were made at several temperatures and activation parameters were determined. The 30 solvents gave a reasonably precise extended Grunwald-Winstein plot, correlation coefficient (R) of 0.989. The sensitivity values (l = 1.29 and m = 0.64) of diphenyl thiophosphorochloridate ($(PhO)_2$PSCl, 1) were similar to those obtained for diphenyl phosphorochloridate ($(PhO)_2$POCl, 2), diphenylphosphinyl chloride ($Ph_2$POCl, 3) and diphenylthiophosphinyl chloride ($Ph_2$PSCl, 4). As with the previously studied of 3~4 solvolyses, an $S_N$ pathway is proposed for the solvolyses of diphenyl thiophosphorochloridate (1). The activation parameters, ${\Delta}H^{\neq}\;(=11.6{\sim}13.9\;kcal{\cdot}mol^{-1})\;and\;{\Delta}S^{\neq}\; (=\;-32.1\;{\sim}\;-42.7\;cal{\cdot}mol^{-1}{\cdot}K^{-1})$, were determined, and they were in line with values expected for an $S_N$2 reaction. The large kinetic solvent isotope effects (KSIE, 2.44 in MeOH/MeOD and 3.46 in $H_2O/D_2$O) are also well explained by the proposed $S_N$2 mechanism.

• Journal of Environmental Science International
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• v.12 no.9
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• pp.997-1004
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• 2003

The objective of this research was to test whether, under controlled laboratory conditions, hybrid SNCR/SCR process improves N $O_{x}$ removal efficiency in comparison with the SNCR only. The hybrid process is a combination of a redesigned existing SNCR with a new downstream SCR. N $O_{x}$ reduction experiments using a hybrid SNCR/SCR process have been conducted in simple NO/N $H_3$/ $O_2$ gas mixtures. Total gas flow rate was kept constant 4 liter/min throughout the SNCR and SCR reactors, where initial N $O_{x}$ concentration was 500 ppm in the presence of 5% or 15% $O_2$. Commercial catalysts, $V_2$ $O_{5}$ -W $O_3$-S $O_4$/Ti $O_2$, were used for SCR N $O_{x}$ reduction. The residence time and space velocity were around 1.67 seconds and 2,400 $h^{-1}$ or 6000 $h^{-1}$ in SNCR and SCR reactors, respectively. N $O_{x}$ reduction of the hybrid system was always higher than could be achieved by SNCR alone at a given value of N $H_{3SLIP}$. Optimization of the hybrid system performance requires maximizing N $O_{x}$ removal in the SNCR process. An analysis based on the hybrid system performance in this lab-scale work indicates that a equipment with N $O_{xi}$ =500 ppm will achieve a total N $O_{x}$ removal of about 90 percent with N $H_{3SLIP}$ $\leq$ 5 ppm only if the SNCR N $O_{x}$ reduction is at least 60 percent. A hybrid SNCR/SCR process has shown about 26∼37% more N $O_{x}$ reduction than a SNCR unit process in which a lower temperature of 85$0^{\circ}C$ turned out to be more effective.be more effective.