• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.586-589
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• 2002

The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

• 한국표면공학회지
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• 제39권3호
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• 통합자연과학논문집
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• 제3권2호
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• pp.96-102
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• 2010

It is still controversial where the improved stability of n-octadecyltriethoxysilane self-assembled monolayer (OTE SAM) on plasma-pretreated mica surface exactly originates from. To date, it has been well known that the extensive cross-polymerization between silane headgroups is a crucial factor for the outstanding mechanical strength of the monolayer. However, this study directly observed that the stability comes not only from the cross-links but also, far more importantly, from the direct chemical bonds between silane headgroups and mica surface. To observe this phenomenon, n-octadecyltrichlorosilane monolayers were self-assembled on both untreated and plasma treated mica surfaces, and their adhesion properties at various stress conditions and force profiles in pure water were investigated and compared through the use of the surface forces apparatus technique. It revealed that, in pure water, there is a substantial difference of stability between untreated and plasma treated cases and the plasma treated surface is mechanically much more stable. In particular, the protrusion behavior of the monolayer during contact repetition experiment was always observed in the untreated case, but never in the plasma treated case. It directly demonstrates that the extensive chemical bonds indeed exist between silane head-groups and plasma treated mica surface and dramatically improve the mechanical stability of the OTE monolayer-coated mica substrate.

• 전자공학회논문지D
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• 제35D권12호
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• pp.68-74
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• 1998

본 논문에서는 electron cyclotron resonance (ECR) N₂O-플라즈마 산화막을 게이트 산화막으로 사용한 다결정 실리콘 박막 트랜지스터 (TFT)의 성능과 단채널 특성에 대하여 연구하였다. ECR NE₂O-플라즈마 게이트 산화막을 사용한 소자는 열산화막을 이용한 경우에 비해 우수한 성능과 억제된 단채널 효과를 나타낸다. 얇은 ECR N2O-플라즈마 산화막을 사용하여 n채널 TFT의 경우 3 ㎛, p채널 TFT의 경우 1㎛ 게이트 길이까지 문턱 전압 감소가 없는 소자를 얻었다. 이러한 특성 향상은 부드러운 계면, passivation 효과, 그리고 계면과 박막 내부에 존재하는 강한 Si ≡ N 결합 등에 기인한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.285-285
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• 2008

• 한국진공학회지
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• 제15권6호
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• pp.563-575
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• 2006

Ti(C,N) 박막을 온도범위 $200-300^{\circ}C$에서 tetrakis diethylamido titanium유기금속 화합물을 전구체로 이용하여 pulsed DC 플라즈마 보조 유기금속 화학기상 증착법 (PEMOCVD)으로 합성하였다. 본 연구에서는 플라즈마 특성을 서로 비교하기 위하여 수소$(N_2)$와 헬륨/수소$(He/H_2)$ 혼합기체를 각각 운반기체로 사용하였으며 전구체 이외에 질소$(N_2)$와 암모니아$(NH_3)$ 기체를 반응기체로 사용하여 서로 다른 플라즈마 화학조건에서 얻어지는 박막내의 탄소함유량(C Content)의 변화를 비교하여 탄소가 가장 적게 함유된 저온 코팅막 합성공정을 찾으려고 하였다. 이를 위하여 증착시 서로 다른 pulsed bias 전압과 기체종류 하에서 여기된 플라즈마 상태의 라디칼종들과 이온화 경향을 in-situ optical emission spectroscopy(OES)법으로 플라즈마 진단분석을 실시하였다. 그 결과 $(He/H_2)$ 혼합기체를 $N_2$와 함께 사용할 경우 라디칼 종들의 이온화를 매우 효과적으로 향상시킴을 관찰하였다. 아울러 $NH_3$ 기체를 $H_2$ 또는 $He/H_2$ 혼합기체와 같이 사용할 경우는 CN 라디칼의 생성을 억제하여 결과적으로 Ti(C, N) 박막내의 탄소함량을 크게 낮춤을 알 수 있었고, CN 라디칼의 농도가 탄소 함유량과 많은 관련이 있음을 알았다. 이 결과는 바로 박막의 미세경도와도 연관이 되며, bias전압과 기체종류에 크게 의존하여 Ti(C, N) 박막의 미세경도가 1250 - 1760 Hk0.01 사이에서 나타났고, 최대치$(1760\;Hk_{0.01})$는 600 V bias 전압과 $H_2$와 $N_2$ 기체를 사용한 경우에 얻어졌다. HF(C, N) 박막 역시 tetrakis diethylamido hafnium 전구체와 $N_2/He-H_2$ 혼합기체를 이용하여 pulsed DC PEMOCVD 법으로 기판온도 $300^{\circ}C$ 이하, 공정압력 1 Torr, 그리고 bias전압과 기체 혼합비를 변화시키면서 증착하였다. 증착시 in-situ OES 분석결과 플라즈마 내의 질소종의 함유량 변화에 따라 증착속도가 크게 변화됨을 알 수 있었고, 많은 질소기체를 인입하면 질소종이 많아지지만 증착률은 급격히 감소하였고 박막내 탄소의 함량이 커지면서 막질이 비정질로 바뀌고 미세경도 또한 감소함을 알 수 있었다. 이는 in-situ 플라즈마 진단분석이 전체 PEMOCVD 공정에 있어서 대단히 중요하고, Ti(C,N)과 Hf(C,N) 코팅막의 탄소함량과 미세경도는 플라즈마내의 CH과 CN radical종의 세기에 크게 의존함을 의미한다. 그리고 Hf(C,N) 박막의 경우도 Ti(C,N) 박막의 경우와 유사하게 최대 미세경도값$(2460\;Hk_{0.025})$이 -600 V bias 전압과 10% 질소기체 혼합비를 사용한 경우에 얻어졌고, 이는 박막이 주로(111) 방향으로 성장됨에 기인한 것으로 사료된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.158-159
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multilayer interconnection layers. In order to reduce the RC delay, low-k materials will be used for inter-metal dielectric (IMD) materials. We have developed self-consistent simulation tool that includes neutral-species transport model, based on the relaxation continuum (RCT) model. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal steady state profile could be obtained.

• 한국표면공학회지
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• 제51권1호
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• pp.54-61
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• 2018

Plasma Nitriding treatment was performed on STS 204Cu stainless steel samples at a temperature of $400^{\circ}C$ for 15 hours with varying $N_2$ content as 10%, 15% and 25%. Regardless of the content of $N_2$, S-Phase which is a hardened layer of Nitrogen (N) supersaturated phase, was formed in the surface of plasma treated samples. When $N_2$ content was 25%, the thickness of the hardened layer reached up to about $7{\mu}m$ and the surface hardness reached a value of $560Hv_{0.05}$, which is about 2.5 times higher than that of untreated sample (as received $220Hv_{0.05}$). From potentiodynamic polarization test, it was observed that compared to as received sample, the corrosion potential and the corrosion current density of the plasma treated samples were decreased regardless of the $N_2$ content, but the corrosion resistance was not increased much due to the precipitation of $Cr_2N$. On the other hand, pitting potential of the samples treated with 10% and 15% $N_2$ was higher than that of as received sample, however, the samples treated with 25% exhibited a lower pitting potential. Therefore, 10% $N_2$ content was selected as optimum plasma nitriding condition and to further increase both the thickness and surface hardness and the corrosion resistance of the hardened layer, different $CH_4$ content such as 1%, 3% and 5% was introduced into the plasma nitriding atmosphere. With 1% $CH_4$, the thickness of the hardened layer reached up to about $11{\mu}m$ and the surface hardness was measured as about $620Hv_{0.05}$, which is about 2.8 times that of as received sample. And the corrosion resistance of the plasma treated sample by using 1% $CH_4$ was improved significantly due to much higher pitting potential, and lower corrosion current density. When the $CH_4$ content was more than 1%, the thickness and surface hardness of the hardened layer decreased slightly and the corrosion resistance also decreased.

• 조명전기설비학회논문지
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• 제18권1호
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• pp.28-35
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• 2004

질소는 안정한 가스로서 잘 알려져 있지만, 해리, 여기, 선리 등의 반응이 일어나기 시작하면 활성도가 높아지게 되고 오랫동안 유지되는 특성을 갖고 있다. 이러한 반응 및 전송과정을 이용하는 예가 많은 분야에서 볼 수 있다. 현재 질소 가스만의 특성 분석 연구에 관한 보고는 상당히 부ㅈㄱ하며 이러한 부분에 대한 연구가 필요하다고 볼 수 있다. 본 연구에서는 질소 플라즈마의 특성을 상세하게 이해하기 위해, 용량 결합형 프라즈마의 1차원 유체 모델에 의한 시뮬레이션을 행하였다. 하전입자의 밀도, 공가 전계 및 전자 에너지 등의 기본적인 움직임을 혹인하고, 전기적으로 정의 가스에서는 발생？ 않는 전기적 이중층의 형성을 분석하였다. 또한 전원 전압을 300∼700 [V] 로, 압력을 0.2∼2.0 [Tow] 로 변화시켜, 그에 따른 플라즈마를 구성하는 각 입자들의 특성을 고찰하였다.

• Current Photovoltaic Research
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• 제3권4호
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• pp.112-115
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• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.