• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.119-120
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• 2013

공구, 다이몰드 등에 널리 쓰이는 TiC, TiN, CrN, TiCrN, TiAlN 코팅의 산화특성을 비교하기 위하여 $600^{\circ}C-900^{\circ}C$에서 대기중 산화시험을 실시하였다. 내산화성은 (TiC, TiN), TiAlN, TiCrN, CrN 코팅의 순서로 증가하였다. 코팅원소중 Ti는 $TiO_2$로, Cr은 $Cr_2O_3$로, Al은 $Al_2O_3$로 산화되었다.

• Bulletin of the Korean Chemical Society
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• 제6권6호
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• pp.369-374
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• 1985

A new flexible quadridentate ligand, N,N'-dimethylethylenediamine-N,N'-di-${\alpha}$-propionic acid (dmedpa) has been synthesized, and diammine and ethylenediamine cobalt(III) complexes of dmedpa, $[Co(dmedpa)(NH_3)_2]^+$ and $[Co(dmedpa(en)]^+,$ have been prepared. Only s-cis isomer has been yielede. A known N,N'-dimethylethylediamine-N,N'-diacetic acid (dmedda) has also been prepared. Dichloro cobalt(III) complexes of both dmedda and dmedpa have been prepared. Only the s-cis isomer has been yielded in the $[Co(dmedda)Cl_2]^-$ complex, while only the uns-cis isomer has been obtained for the $[Co(dmedpa)Cl_2]^-$ complex.

• 대한화학회지
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• 제22권5호
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• pp.295-303
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• 1978

정팔면체[Co(III)-$O_3N_3$], 정사면체[M(II)-$O_2N_2$] 및 정사각형형[M(II)-$O_2N_2$]형태 착물의 쌍극자모멘트를 중심이온의 valence basis sets와 리간드의 single basis 궤도함수($2p_z$)를 사용하여 spherical harmonics의 전개방법에 의하여 계산하였다. 이들 착물에 대하여 계산한 쌍극자모멘트의 값이 실험치와 일치하였다.

• 한국응용과학기술학회지
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• 제7권1호
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• pp.13-24
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• 1990

2-N,N,N-trimethyl ammonia decanoate, 2-N,N,N-trimethyl ammonio dodecanoate, 2-N,N,N-trimethyl ammonia tetradecanoate and 2-N,N,N-hexadecanoate with in straight long chain alkyl carboxybetaines, and N-decyl N,N-dimethyl ammonio ethanoate, N-dodecyl N,N-dimethyl ammonia ethanoate, N-tetradecyl N,N-dimethyl ammonia ethanoate and N-hexadecyl N,N-dimethyl ammonia ethanoate with in nitrogen-straight long chain alkyl carboxy betaines measured respectively surface tensions by the stalagmometer method at various temperature, also their critical micelle concentration were evaluated. In micellization, the contribution of standard free energy change(${\Delta}G^{\circ}m$), standard enthalpy change(${\Delta}H^{\circ}m$) and standard entropy change (${\Delta}S^{\circ}m$), have been calculated, with increasing temperature. ${\Delta}H^{\circ}m$ changes from negative, and a similar change in the sign of ${\Delta}H^{\circ}m$ is observed with increasing chain length at $25^{\circ}C$, while the entropy of micellization, ${\Delta}S^{\circ}m$ is positive over the temperature range studied, it becomes less so at higher temperatures. Estimates of the enthalpy and entropy contribution attributable to the ion head group and alkyl chain have been made. The enthalpy and entropy change, per methylene group increase respectively with increasing chain length the result are discussed in terms of current theories of micellization.

• Journal of Microbiology and Biotechnology
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• 제21권9호
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• pp.988-994
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• 2011

A significant amount of nitrous oxide ($N_2O$), which is one of the serious greenhouse gases, is emitted from nitrification and denitrification of wastewater. Batch wastewater nitrifications with enriched nitrifiers were carried out under oxygen-limited condition with synthetic (without organic carbon) and real wastewater (with organic carbon) in order to find out the effect of ammonium concentration on $N_2O$ emission. Cumulated $N_2O$-N emission reached 3.0, 5.7, 6.2, and 13.5 mg from 0.4 l of the synthetic wastewater with 50, 100, 200, and 500 mg/l ${NH_4}^+$-N, respectively, and 1.0 mg from the real wastewater with 125 mg/l ${NH_4}^+$-N. The results indicate that $N_2O$ emission increased with ammonium concentration and the load. The ammonium removal rate and nitrite concentration also increased $N_2O$ emission. Comparative analysis of $N_2O$ emission from synthetic and real wastewaters revealed that wastewater nitrification under oxygen-limited condition emitted more $N_2O$ than that of heterotrophic denitrification. Summarizing the results, it can be concluded that denitrification by autotrophic nitrifiers contributes significantly to the $N_2O$ emission from wastewater nitrification.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• 대한화학회지
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• 제36권2호
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• pp.191-196
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• 1992

$CHCl_3,\;CHCl_3 : CH_2Cl_2$(1:1) 및 $CH_2Cl_2$ 용매 중에서 N,N-dimethylaniline(N,N-DMA)과 iodine간의 반응을 전도도법을 이용하여 속도론적으로 조사하였다. 유사 1차반응 속도상수($k_{obs}$) 및 2차반응 속도상수($k_{obs}$/[N,N-DMA])가 N,N-DMA 농도 의존성을 보였다. 실험적으로 구한 2차반응 속도상수는 N,N-DMA 농도 증가와 더불어 증가하였다. 이러한 결과를 반응 중간 생성물로서 charge tranfer complex의 생성에 기인하는 것으로 보고, 반응 scheme의 설정과 속도상수식의 유도로부터 complex 생성에 따른 평형상수와 변환에 따른 활성화 파라미터를 계산하였다. 평형상수는 용매의 유전상수의 증가와 더불어 감소하였으며, 1.9${\sim}$4.2$M^{-1}$의 값을 보였다. 또한 변환의 빠르기는 용매의 극성에 크게 의존하였으며, ${\Delta}H^{\neq}$값은 6.3-12.6kJ/mol, ${\Delta}S^{\neq}$값은 약 -234J/mol K의 큰 음의 값을 나타내었다.

• Korean Journal of Mathematics
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• 제16권3호
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• pp.413-424
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• 2008

In [21], Th.M. Rassias proved that the norm defined over a real vector space V is induced by an inner product if and only if for a fixed integer $n{\geq}2$ $$n{\parallel}\frac{1}{n}\sum\limits_{i=1}^{n}x_i{\parallel}^2+\sum\limits_{i=1}^{n}{\parallel}x_i-\frac{1}{n}\sum\limits_{j=1}^{n}x_j{\parallel}^2=\sum\limits_{i=1}^{n}{\parallel}x_i{\parallel}^2$$ holds for all $x_1,{\dots},x_n{\in}V$. We consider the functional equation $$nf(\frac{1}{n}\sum\limits^n_{i=1}x_i)+\sum\limits_{i=1}^{n}f(x_i-\frac{1}{n}\sum\limits_{j=1}^{n}x_j)=\sum\limits_{i=1}^nf(x_i)$$ Using fixed point methods, we prove the generalized Hyers-Ulam stability of the functional equation $$(1)\;2f(\frac{x+y}{2})+f(\frac{x-y}{2})+f(\frac{y-x}{2})=f(x)+f(y)$$.

• Journal of applied mathematics & informatics
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• 제33권3_4호
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• pp.365-377
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• 2015

For a (molecular) graph, the first and second Zagreb indices (M₁ and M₂) are two well-known topological indices, first introduced in 1972 by Gutman and Trinajstić. The first Zagreb index M₁ is equal to the sum of the squares of the degrees of the vertices, and the second Zagreb index M₂ is equal to the sum of the products of the degrees of pairs of adjacent vertices. Let $K_{n_1,n_2}^{P}$ with n₁ $\leq$ n₂, n₁ + n₂ = n and p < n₁ be the set of bipartite graphs obtained by deleting p edges from complete bipartite graph K_n1,n2. In this paper, we determine sharp upper and lower bounds on Zagreb indices of graphs from $K_{n_1,n_2}^{P}$ and characterize the corresponding extremal graphs at which the upper and lower bounds on Zagreb indices are attained. As a corollary, we determine the extremal graph from $K_{n_1,n_2}^{P}$ with respect to Zagreb coindices. Moreover a problem has been proposed on the first and second Zagreb indices.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2000년도 추계학술발표논문집 (상)
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• pp.637-640
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• 2000

본 논문에서는 하이퍼큐브보다 망비용이 개선된 HFN(n,n)과 2n-hypercube 사이의 임베딩을 분석한다. 2n-hypercube를 HFN(n,n)에 연장율 3에 임베딩 가능함을 보이고, HFN(n,n)을 2n-hypercube에 임베딩하는 비용이 O(n)임을 보인다.