• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• 대한기계학회논문집A
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• 제28권12호
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• pp.1923-1930
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• 2004

This paper presents digital microflow controllers(DMFC), where a fluidic digital-to-analog converter(DAC) is used to achieve high-linearity, fine-level flow control for applications to precision biomedical dosing systems. The fluidic DAC, composed of binary-weighted flow resistance, controls the flow-rate based on the ratio of the flow resistance to achieve high-precision flow-rate control. The binary-weighted flow resistance has been specified by a serial or a parallel connection of an identical flow resistor to improve the linearity of the flow-rate control, thereby making the flow-resistance ratio insensitive to the size uncertainty in flow resistors due to micromachining errors. We have designed and fabricated three different types of 4-digit DMFC: Prototype S and P are composed of the serial and the parallel combinations of an identical flow resistor, while Prototype V is based on the width-varied flow resistors. In the experimental study, we perform a static test for DMFC at the forward and backward flow conditions as well as a dynamic tests at pulsating flow conditions. The fabricated DMFC shows the nonlinearity of 5.0% and the flow-rate levels of 16(2$^{N}$) for the digital control of 4(N) valves. Among the 4-digit DMFC fabricated with micromachining errors, Prototypes S and P show 27.2% and 27.6% of the flow-rate deviation measured from Prototype V, respectively; thus verifying that Prototypes S and P are less sensitive to the micromachining error than Prototype V.V.

• 한국기계가공학회지
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• 제12권3호
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• pp.21-27
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• 2013

This study is investigated on flow analysis according to grill configuration of radiator. The stream of flow which pass through radiator grill in car body and the contour of pressure distribution are estimated by the basis. As the magnitude of resistance force which flow affects the car body is investigated so that the power reduction can be reduced. As the pressure inside radiator grill is assessed, more efficiency can be investigated in order that the flow rate inside car body can be increased. Model 2 has the most air resistance and model 1 has the least among model 1, 2 and 3. Model 1 has the most air flow rate at inside. There are model 3 and 2 simulated according to flow rate. As the curved surface at radiator grill configuration increases in number, air flow rate becomes distributed uniformly. By considering the effect on air resistance and air flow rate at radiator grill, model 3 becomes the most effective configuration.

• 지질공학
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• 제11권3호
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• pp.327-337
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• 2001

터널 굴착에 따른 연구지역 지하수체의 거동 특성을 파악하기 위하여 터널 굴착시 그라우팅 이전의 초기 유출량과 초기 그라우팅 이후의 구간별 유출량을 측정하였고 단열구조와 비교, 분석하였다. 초기 유출량은 120,990m$^3$/day이며, 초기 유출이 심했던 구간은 크게 6개 구간으로 구분할 수 있다. 초기 그라우팅 이후에 지하수 유출이 심했던 구간도 그라우팅 이전과 마찬가지로 6개 구간으로 구분할 수 있다. 그라우팅 전, 후의 유출량을 비교해 보면 그라우팅 후의 유출량은 42,844m$^3$/day으로, 그라우팅 전에 비해 많이 감소되었다. 그러나 주변 지역에 있는 관측공들은 지하수위는 그라우팅 전, 후를 비교하여 큰 차이가 없었다. 터널 굴착시 터널내로 유출되는 지하수의 대부분은 터널과 직교 혹은 사교하는 단층 및 단층 파쇄대와 연장성 및 연결성이 양호한 절리면들을 따라서 유동되고 있다. 터널내의 지하수 유출에 영향을 미치는 단열들은 대체로 4조의 불연속군으로 분류 할 수 있는데, 주 분포방향은 크게 TSet 1 : N60-85$^{\circ}C$ W.25$^{\circ}$SW/80$^{\circ}$SW, TSet 2 : N40-50$^{\circ}$E.85$^{\circ}$SE/85$^{\circ}$NE, TSet 3 : N10-20$^{\circ}$E.85$^{\circ}$SE, TSet 4 : N70-80$^{\circ}$E.80$^{\circ}$SE 이다.

• 한국산업융합학회 논문집
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• 제26권1호
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• pp.183-191
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• 2023

This study was conducted experimentally to investigate the surface temperature of the heat sink, the air temperature in the flow channel and the sample temperature by changing the channel number of channel type heat sink and the air flow rate when heating and cooling the bio sample. The target temperature of the sample was 15℃ or less as the minimum value and 82℃ or more as the maximum value. In this study, the channel number of the heat sink(N = 1, 2, 4, 5, 10) and the air flow rate(Q=25, 42, 54m³/min) were varied. The bio sample was replaced with water, and the volume of water is 4mL. The size of the heat sink is 80x73x150mm and the material is aluminum. When cooling the sample, the surface temperature, the air temperature and the sample temperature were highly dependent on the number of channels and the flow rate. However, when the sample is heated, the surface temperature, air temperature and sample temperature do not depend on the number of channels and the flow rate. It was found that the conditions for satisfying the minimum temperature of 15℃ or less when cooling the sample were the number of channels N≥5 and the flow rate Q≥42m³/min. When heating the sample, the conditions to satisfy the maximum temperature of 82℃ or more are the number of channels N≤5 and the air flow rate Q≤42m³/min.

• 한국농공학회논문집
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• 제50권2호
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• pp.65-71
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• 2008

A monsoon season monitoring data from June to September, 2005 of a small forested watershed located at the upstream of the North Han River system in Korea was conducted to analyze the flow variations, the NPS pollutant concentrations, and the pollution load characteristics with respect to sampling frequencies. During the 4-month period, 1,423 mm or 79.2% of annual rainfall(1,797 mm) were occurred and more than 77%, 54% and 68% of annual T-N, $NO_3$-N and T-P loads discharged. Flow rate was continuously measured with automatic velocity and water level meters and 58 water quality samples were taken and analyzed. It was analyzed that the flow volume by random measurement varied very widely and ranged from 79% to 218% of that of continuous measurement. It was recommended that flow measurement of small forested watersheds should be continuously measured with automated flow meters to precisely measure flow rates. Flow-weighted mean concentrations of T-N, $NO_3$-N and T-P during the period were 2.114 mg/L, 0.836 mg/L, and 0.136 mg/L, respectively. T-N, $NO_3$-N and T-P loads were sensitive to the number of samples. And it was analyzed that in order to measure the pollution load within the error of 10% to the true load, the rate of sampling frequency should be higher than 89.7% of the sample numbers that were required to compute the true pollution load. If it is compared to selected foreign research results, about 10 water samples for each rainfall event were needed to compute the pollution load within 10% error. It is unlikely in Korea and recommended that thorough NPS pollution monitoring studies are required to develop the standard monitoring procedures for reliable NPS pollution quantification.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Current Photovoltaic Research
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• 제2권4호
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• 한국환경과학회지
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• 제30권5호
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• pp.399-406
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• 2021

The dissolution of ionized gas in dielectric barrier plasma, similar to the principle of ozone generation, is a major performance-affecting factor. In this study, the plasma gas dissolving performance of a gas mixing-circulation plasma process was evaluated using an experimental design methodology. The plasma reaction is a function of four parameters [electric current (X₁), gas flow rate (X₂), liquid flow rate (X₃) and reaction time (X₄)] modeled by the Box-Behnken design. RNO (N, N-Dimethyl-4-nitrosoaniline), an indictor of OH radical formation, was evaluated using a quadratic response surface model. The model prediction equation derived for RNO degradation was shown as a second-order polynomial. By pooling the terms with poor explanatory power as error terms and performing ANOVA, results showed high significance, with an adjusted R² value of 0.9386; this indicate that the model adequately satisfies the polynomial fit. For the RNO degradation, the measured value and the predicted values by the model equation agreed relatively well. The optimum current, gas flow rate, liquid flow rate and reaction time were obtained for the highest desirability for RNO degradation at 0.21 A, 2.65 L/min, 0.75 L/min and 6.5 min, respectively.

• 한국재료학회지
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• 제9권3호
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• pp.257-262
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• 1999

MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.