• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.51-59
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• 1986

It was the first time the MgO-C brick was developed for the lining materials in the hot spots in electric are furnace in 1972. MgO-C brick is high registant to thermal and structural spalling. Futhermore for the reason that carbon is hard to react with slag and MgO is high fireproof MgO-C brick shows a high corrosion registance to slag attack compared with conventional basic refractories. Owing to their excellent properties the use of MgO-C refractories are being developed widely in the field of shaped refractories and even in that of monolithic refractories. In this paper the oxidation of carbon the infiltration of slag into the brick texture and effects of additions were investigated. The results obtained were as follows : 1) The use of fused MgO-clinker and high purity carbon as raw materials increased the corosion registance and hot modulus of rupture of MgO-C brick. 2) As the oxidation reaction of the carbon proceeded the slag infiltrated into the brick texture. And then the slag components reacted with the MgO grains and formed low melting point compounds particulary CaO.MgO.$SiO_2$ and 3CaO.MgO.$2SiO_2$ that resulted in the wear of the brick. 3) It is recongnized the Al, Si, $B_3C$ effects on the oxidation registant properties of MgO-C brick by contribu-ting to the decrease of permeability according to the formation of $Al_4C_3$, SiC, $B_2O_3$ and the decrease of open pores relating to the formation of MgO.Al2O3, $SiO_2$, 3MgO.$B_2O_3$ at the decarbonized layer.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.831-832
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• 2006

Solid-state processing via the bulk mechanical alloying enables us to directly fabricate $Mg_2X$ semi-conductive material performs. Precise control of chemical composition leads to investigation on the dilution and enrichment of X in $Mg_2X$. Two types of solid-state reactivity are introduced: e.g. synthesis of $Mg_2Si$ from elemental mixture Mg-Si is nucleation-controlled process while synthesis of $Mg_2Sn$ from Mg-Sn, diffusion-controlled process. Thermoelectricity of these $Mg_2X$ is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

• Journal of the Mineralogical Society of Korea
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• v.16 no.2
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• pp.161-169
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• 2003

A phase transformation study on a synthetic amorphous diopside, $(Ca,Mg)SiO_3$has been carried out up to ∼30 GPa, and ∼$1000^{\circ}C$ using a diamond anvil cell and YAG laser heating system, respectively. A starting amorphous material shows a direct transition to cubic $(Ca,Mg)SiO_3$perovskite at high pressure, which contradicts to the crystalline diopside phase transformation sequence disproportionating into mixtures of the orthorhombic$ MgSiO_3$perovskite and the cubic $CaSiO_3$perovskite phases. This discrepancy might be due to the different starting materials as well as the temperature variations at each specific experiment performed. The present phase transfor mation sequence would modify the mineralogical assemblage in the Earth transition region and the lower mantle depending upon the pressure, temperature and the oxygen partial pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.74-79
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• 2018

To increase corrosion resistance of Mg alloy, AZ31 and AZ91 were PEO treated with different applied voltage and time conditions. We used Na-P and Na-Si system electrolyte. Crystalline phase and morphology were investigated. MgO was Most common crystal phase and vitreous phase could be found. Crystalline phase of $Na_{3.59}Mg_{2.71}(PO_4)_3$ and $Mg_2SiO_4$ also could be found. Porosity of oxidized surface tends to decrease with increasing PEO applied voltage, treat time and concentration of electrolyte, after then, size of pore increased and total number of pore decreased, distinctly.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.150-150
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• 2000

The adsorption geometry and the electronic property of Mg grown at room temperature on the Si(111)-7$\times$7 surface with various coverages have been studied by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). At low Mg coverage, the Mg atoms preferentially adsorb at the center adatom sites of the faulted half of the Si(111)-7$\times$7 surface. The adsorbed Mg atom acts as nucleophile with respect to Si atoms thus forms a stable ionic bond with the substrate Si atoms. Above 1 Ml, the 7$\times$7 surface starts to be disrupted and an amorphous Mg overlayer is formed. The LEED shows either $\delta$7$\times$7 or 1$\times$1 pattern at this coverage. When more Mg atoms were exposed, a flat and broad {{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}$\times${{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}R30$^{\circ}$region evolves. A flat silicide is formed at first and multi-level Mg islands having hexagonal step edges develop with increasing coverage. The scanning tunneling spectroscopy (STS) confirms the electronic properties of these Mg films on the si(111) 7$\times$7 surface at various coverages.

• Corrosion Science and Technology
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• v.20 no.4
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• pp.196-203
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• 2021

To improve corrosion resistance and reduce the hydrogen uptake of 22MnB5, up to 5% Mg was added to the AlSi coating of 22MnB5. After hot-stamping and electrocoating were done on the metallic-coated specimen, the surface characteristics of the steel, hydrogen uptake content, and corrosion resistance were examined by transmittance electron microscopy, thermal desorption spectrometry, cyclic corrosion testing, and electrochemical impedance spectroscopy. Mg was investigated as MgO on the surface layer after hot-stamping while it existed as Mg₂Si before hot-stamping. The total hydrogen content of 22MnB5 was decreased along with the Mg content. However, there was no difference at 0.2 wt% or more. When a small amount of Mg was added, the coating corrosion resistance was decreased, but when it was added at around 1.0 wt%, the greatest corrosion resistance increase was seen. However, when 3 wt% or more was added excessively, the corrosion resistance was decreased. MgO on the surface was considered to suppress H uptake by the AlSi melting solution and increase the barrier effect of the coating.

• Journal of Korea Foundry Society
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• v.33 no.6
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• pp.233-241
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• 2013

Effect of Fe and Mn contents on the castability of Al-9wt%Si-xMg-yFe-zMn alloy has been studied. The alloy was composed of ${\alpha}$-Al phase, Al+eutectic Si phase, ${\beta}$-Al5FeSi compound and chinese script ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compound. ${\beta}$-$Al_5FeSi$ and ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compounds assumed to effect the fluidity and shrinkage behaviors of the alloy during solidification due to the crystallization of ${\alpha}$-$Al_{15}(Fe,Mn)_3Si_2$ and ${\beta}$-$Al_5FeSi$ compounds above eutectic temperature. As Fe and Mn contents of Al-9wt%Si-0.3wt%Mg system alloy increased from 0.15wt% to 0.6wt% and from 0.3wt% to 0.7wt%, fluidity of the alloy decreased by 5.7% and 3.3%, respectively. And as Mg content of Al-9wt%Si-0.45wt%Fe-0.5wt%Mn system alloy increased from 0.3wt% to 0.4wt%, fluidity of the alloy decreased by 8.6%. When Fe content of the alloy increased from 0.15wt% to 0.6wt%, macro shrinkage ratio decreased from 6.1% to 4.1%, and micro shrinkage ratio increased from 0.04% to 0.24%. Similarly, Mn content of the alloy increased from 0.3wt% to 0.7wt%, macro shrinkage ratio decreased from 6.0% to 4.5% and micro shrinkage ratio increased from 0.12% to 0.18%. Judging from the castability of the alloy, Al-9wt%Si-0.3wt%Mg alloy with low content of Fe and Mn, 0.1wt% Fe and 0.3wt% Mn, is recommendable.

• Analytical Science and Technology
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• v.12 no.2
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• pp.116-124
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• 1999

Adsorption characteristics of heavy metal ions, Cd(II) and Pb(II), on eastcoast-living algae, ulva pertusa, has been studied in our experiment. The Maximum adsorption amount of Cd(II) and Pb(II) ions on 1 g of the ulva pertusa were 2.3 mg, 3.1 mg in alkaline and 2.0 mg, 2.8 mg in acidic solution. However 3.4 mg, 7.3 mg in alkaline and 3.1 mg, 6.5 mg in acidic solution were shown on the Si-immobilized ulva pertusa in the same condition. Thus, Si-immobilized ulva pertusa adsorbs more amount of heavy metals, Cd(II), Pb(II), than the ulva pertusa, and more effective absorbent in alkaline. Furthermore, more amounts of Pb(II) ion were absorbed compare to Cd(II) ion in our work. Recovery ratio of Cd(II) and Pb(II) ions on the ulva pertusa were 55.0~61.0%, 59.7~66.8% respectively and 87.6~97.5%, 83.5~99.3% on the Si-immobilized ulva pertusa.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.