• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.310-310
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• 2007

Mg-Si-O계 세라믹스에 glass frit 조성을 첨가하여 저온에서의 소결 특성 및 마이크로파 유전 특성을 연구하였다. 기존의 Mg-Si-O계 세라믹스는 우수한 유전특성을 가지고 있으나 높은 소결온도로 인하여 LTCC용 기판 소재로 적용이 어려웠다. 본 연구에서는 MgO, $SiO_2$를 이용하여 $Mg_2SiO_4$을 합성한 후, $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass 조성을 20~40wt%로 첨가하여 소결온도를 감소시켜 LTCC 기판 소재로서의 적용성을 고찰하였다. glass frit 함량이 증가함에 따라 밀도($g/cm^3$) 및 유전율(${\varepsilon}_r$)은 증가하였고 품질계수($Qxf_0$)값은 감소하였다. glass frit 함량이 40wt%일때 $900^{\circ}C$에서 1시간 소결한 소결체의 유전톡성은 유전율 (${\varepsilon}_4$) = 6.5. 품질계수 ($Qxf_0$) = 4,000(GHz), 온도계수 $(\tau_t)\;=\;{\pm}\;10ppm/^{\circ}C$로 우수한 특성을 확인하였다.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.2
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• pp.108-114
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• 2000

The effects of heat treatments in Al-Si-Mg alloys on the microstructure and hardness have been investigated by the optical microscope, scanning electron microscope(SEM), and Rockwell hardness tester. The materials of various compositions are melted in a vacuum induction furnace under argon atmosphere. Five different Al alloys are prepared from commercial purity aluminium, magnesium and Al-25Si alloy. Two types of aging treatments are performed: i) Isothermal aging of the specimens at $150^{\circ}C$, $170^{\circ}C$ and $190^{\circ}C$. ii) Pre-aging of the specimens at $60^{\circ}C$, $80^{\circ}C$ and $100^{\circ}C$, and followed by final-aging at $170^{\circ}C$ and $190^{\circ}C$. After the heat treatments, Rockwell hardness are measured with all the specimens.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.144.2-144
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• 2000

• Journal of Radiation Protection and Research
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• v.23 no.1
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• pp.59-63
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• 1998

The light sensitivity and angular dependence of the $Mg_2SiO_4$:Tb(MSO-5) TLD which affect the accuracy of the radiation dose measurement are investigated. Light-induced thermoluminescence of MSO-S TLD under the 200 lux fluorescent and the incandescent lamp for 8 hours are corresponding to 11 and 3 mR exposure, respectively. TL intensity ratio of the incident angle of ${\pm}80^{\circ}$ to normal incidence for MSO-S and badge type MSO-L are about 0.8 and 0.15, respectively.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1683-1685
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• 2003

MgO is making an important role not only as a protective layer but also improves the discharge characteristics at AC PDP. Until now, the substitute of protective layer, MgO has been studied in many ways, but it's too difficult to get a new substitute as stable as MgO. But some problems has been advanced at the discharge characteristics of MgO on high temperature. So we studied the discharge characteristics of impure MgO with $SiO_2$ doped.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.231-232
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• 2006

Aluminum Alloys with a content of 22 wt.-% $Mg_2Si$ were spray formed. This alloy features by a low density and is therefore a superior material for leightweight applications. The main problem in spray forming of this type of alloy was the occurance of high porosities. First process optimizations have been performed to decrease porosity under a certain level, so that it can be closed by an extrusion process

• Journal of Radiation Protection and Research
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• v.34 no.4
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• pp.155-164
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• 2009

In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

• Journal of Radiation Protection and Research
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• v.22 no.3
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• pp.135-141
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• 1997

The study of anneal characteristics is important for TL dosimeter to reuse. To obtain the annealing condition of the recently developed, new TL dosimeter, LiF:Mg,Cu,Na,Si Teflon Tills in a disk type (diameter 4.5 mm, thickness about $90mg/cm^2$), we studied for pre-irradiation annealing, readout procedure and post-readout annealing, in order. The gamma irradiations were carried out with a $^{60}Co$, dose of 0.1 Gy. We have used the method that observe the variation of thermoluminescent(TL) intensity of these Teflon TLDs over repeated cycles by changing both anneal temperature and anneal time with the TLD reader and the oven. There is a 5% loss in sensitivity over the ten repeated readouts by the annealing condition:pre-irradiation annealing at $80^{\circ}C$ for one hour, readout to $280^{\circ}C$ and post-readout annealing at $270^{\circ}C$ for 20 seconds.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.613-617
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• 2010

Ferro-Nickel slag is one of the by-products in Ferro-Nickel manufacturing process. The slag is composed of $SiO_2$, MgO, $Fe_2O_3$ and others. But the slag has been buried at landfill despite having valuable elements. This study tried to extract Mg ion and fabricate Mg compound from ferro-nickel slag using hydrochloric acid solution. Mg ion was extracted with Si, Fe and other ions in HCl solution. So reprocess was needed for gaining high purity Mg ion. It was thought that Si ion or $SiO_2$ precipitated in HCl solution and removed from solution in filtering process. Fe ion converted into $Fe(OH)_3$ after reacted with $NH_4OH$ and precipitated in HCl solution. After these process, the filtrate was composed of high purity Mg ion. $MgCl_2{\cdot}NH_4Cl{\cdot}6H_2O$ was obtained through drying of filtrate and this product was changed into MgO by burning process ($600^{\circ}C$-30 min). That is, 1st material or solution for manufacturing 2nd product was fabricated using acid dissolution method and other treatments.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.1-15
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• 2014

Probing the electronic structures of crystalline Mg-silicates at high pressure is essential for understanding the various macroscopic properties of mantle materials in Earth's interior. Quantum chemical calculations based on the density functional theory are used to explore the atomic configuration and electronic structures of Earth materials at high pressure. Here, we calculate the partial density of states (PDOS) and O K-edge energy-loss near-edge structure (ELNES) spectra for $MgSiO_3$ perovskite at 25 GPa and 120 GPa using the WIEN2k program based on the full-potential linearized projected augmented wave (FP-LPAW) method. The calculated PDOS and O K-edge ELNES spectra for $MgSiO_3$ Pv show significant pressure-induced changes in their characteristic spectral features and relative peak intensity. These changes in spectral features of $MgSiO_3$ Pv indicate that the pressure-induced changes in local atomic configuration around O atoms such as Si-O, O-O, and Mg-O length can induce the significant changes on the local electronic structures around O atoms. The result also indicates that the significant changes in O K-edge features can results from the topological densification at constant Si coordination number. This study can provide a unique opportunity to understand the atomistic origins of pressure-induced changes in local electronic structures of crystalline and amorphous $MgSiO_3$ at high pressure more systematically.