• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.48-54
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• 2006

Hydroxyapatite $(HAp,\;Ca_{10}(PO_4)_6(OH)_2)$/alumina composites were fabricated with the addition of fluorides, such as $MgF_2$ and $CaF_2$. In this study, the effect of fluorides on the inhibition of phase decomposition and the mechanical properties of HAp was investigated. Due to the higher solubility of F ion in HAp structure, $MgF_2$ additive was more effective compared to $CaF_2$ additive in the lowering decomposition temperature of HAp. Therefore, the dissociation tendency of HAp was fully inhibited below $1400^{\circ}C$. The mechanical properties of HAp composites with $MgF_2$ additive showed higher value (flexural strength: $\~170MPa$, Vickers hardness: $\~7\;GPa$, fracture toughness: $\~1.5\;MPam^{1/2}$) compared to $MgF_2-free$ composites. The linear thermal expansion coefficient of HAp composites with $MgF_2$ showed the value of $16.4\times10^{-6}/^{\circ}C\;at\;20\~400^{\circ}C $.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.2
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• pp.137-143
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• 2017

In the present study, Ni and $TaF_5$ were chosen as additives to enhance the hydriding and dehydriding rates of Mg. A sample with a composition of 80 wt% Mg + 14 wt% Ni + 6 wt% $TaF_5$ (named $80Mg+14Ni+6TaF_5$) was prepared by high-energy ball milling in hydrogen. Its hydriding and dehydriding properties were then examined. At the fourth cycle, the activated sample absorbed 3.88 wt% H for 2.5 min, 4.74 wt% H for 5 min, and 5.75 wt% H for 60 min at 593 K under 12 bar $H_2$. $80Mg+14Ni+6TaF_5$ had an effective hydrogen-storage capacity (the quantity of hydrogen absorbed for 60 min) of about 5.8 wt%. The sample desorbed 1.42 wt% H for 5 min, 3.42 wt% H for 15 min, and 5.09 wt% H for 60 min at 593 K under 1.0 bar $H_2$. Line scanning results by EDS for $80Mg+14Ni+6TaF_5$ before and after cycling showed that the peaks of Ta and F appeared at different positions, indicating that the $TaF_5$ in $80Mg+14Ni+6TaF_5$ was decomposed.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.548-554
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• 1997

The single crystal of $Mg_{0.16}Zn_{0.84}$Te:Co(Co:0.01 mole%) was grown by vertical Bridgman method. The crystal structure of $Mg_{0.16}Zn$_{0.84}$Te:Co and optical absorption properties of this compound were studied. The grown single crystal has a cubic structure and a lattice constant a=6.1422 $\AA$ were determined by X-ray diffraction. As a result of the optical absorption spectra of $Mg_{0.16}Zn_{0.84}$Te:Co, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$.The charge transfer transition near the absorption edge was observed in the wavelength range of 550 to 770 nm. According to the crystal field theory, the crystal field parameter(Dq) and the Racah parameter(B) were determined.

• Korean Journal of Food Science and Technology
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• v.44 no.2
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• pp.207-215
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• 2012

Six different mashing types ((A) $koji$+purified enzyme, (B) $koji$+crude enzyme, (C) $koji$+$nuruk$, (D) $koji$+purified enzyme+$nuruk$, (E) $koji$+crude enzyme+$nuruk$, (F) purified enzyme+$nuruk$) had been established, according to fermentation agents and a mixing rate of rice $makgeolli$, in this study. The alcohol content was the highest in the mashing type (C), which was 13.6%, followed by (D) 13.5%, (A) 13.1%, (B) 12.9%, (E) 12.7% and (F) 12.1%. The reducing sugar content of (A) was the highest with 401.6 mg% and those of (B), (C), (D) and (F) were between 337.3- 380.9 mg%. The alcohol components were found and tended to increase during the fermentation. The oligo-saccharides content was the highest in (D) with 1251.3 mg%, which was followed by (E) 1,219.2 mg%, (C) 1,141.4 mg%, (A) 1,049.9 mg% and 973.8 mg% in (B). The total free amino acid was highest in (B) with 781.4 mg% and followed by (C) 703.2 mg%, (D) 702.6 mg%, (E) 678.7 mg%, (A) 630.4 mg% and (F) 328.7 mg% in order. There were 16 different types of volatile flavor components, in the mashing types (A) and (B), in addition to 15 different types of those in type (C), as well as 14 different types of those in (D), (E) and (F). There were significant differences in the overall preference between the type (A) and (C).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.373-373
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• 2011

$Cu(In,Ga)Se_2$(CIGS) 박막 태양전지는 Chalcopyrite계 박막 태양전지로 Cu, In, Ga, Se 각 원소의 조성을 적절히 조절하여 박막을 성장시킨다. 성장시킨 CIGS 박막은 광흡수계수가 105cm-1로 다른 물질 보다 뛰어나고 직접 천이형 반도체로서 얇은 두께로도 고효율의 박막 제작이 가능하다. 얇은 두께로도 충분히 빛의 흡수가 가능하지만, cell 표면 반사에 의한 광 손실은 cell 효율을 떨어뜨리게 된다. 본 연구에서는 CIGS 박막 태양전지의 광 흡수 향상을 위해 굴절률이 1.86인 ITO 위에 ITO보다 굴절률이 작은 $MgF_2$ (n=1.377) [1]를 80, 100, 120, 140 nm로 증착하여 $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/SLG 시료를 제작하고, optical reflectance, Quantum Efficiency를 이용하여 분석하였다. optical reflectance 분석 결과, $MgF_2$ AR coating을 한 경우, 두께가 두꺼워짐에 따라 광 반사도가 감소하는 경향을 보였다. 또한 AR coating 두께가 커짐에 따라 fluctuation이 점점 커지며, 파형이 장파장 쪽으로 shift하는 것을 관찰 할 수 있었다. Quantum efficiency (QE)를 분석한 결과 $MgF_2$ AR coating 할 경우, 측정된 대부분의 파장에서 QE가 향상되는 것을 확인할 수 있었다. 하지만 AR coating 두께에 따른 변화는 뚜렷한 차이를 보이지 않았다. AR coating 결과, JSC가 증가하여 efficiency가 향상되는 것을 확인 할 수 있다. 그러나 $MgF_2$ AR coating 80~140 nm 범위에서 cell 효율 변화의 뚜렷한 차이는 관찰할 수 없었다.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.163-170
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• 1997

The retarding effects of MgSiF6.6H2O on the hydration of portland cement were studied. The setting time, flow value and compressive strength of mortar were measured and the mechanism of retardation was also studied by ion concentration in solution, SEM, BET, and X-ray diffraction. The results are as follows ; 1. Setting time was delayed by the addition of MgSiF6.6H2O. 2. The flow value of mortar decreases depending upon the amount of MgSiF6.6H2O. 3. The compressive strength was almost same or some increase on 28 days hydration. 4. The main retardation mechanism of MgSiF6 on the hydration of portland cement may be explained by the following hypothesis. MgSiF6 depressing the Ca++ and K+ ion concentration of cement paste solution be-cause of the recrystalization of K2SiF6 and CaF2 phase. The new products of K2SiF6 and CaF2 deposit on the surface of unhydrated cement powder and harzard the mass transfer through these layer. The low con-centration of Ca++, K+ ion in solution was decreasing the hydration rate of portland cement.

• Journal of Radiation Protection and Research
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• v.15 no.2
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• pp.57-65
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• 1990

Newly developed LiF(Mg, Cu, Na, Si) thermoluminescence phosphors sealed in a plastic capsules (32mm dia., 0.9mm wall thickness) were used for in-phantom dosimetry of $^{60}Co$ $\gamma$-irradiation. The absorbed doses in water were determined by applying the general cavity theory to the absorbed dose in TLD cavity, which was computed from exposure. The absorbed doses at various sites in the water-phantom were measured by LiF(Mg, Cu, Na, Si) TLD and compared with doses obtained by the ionization method. Both results were consistent within the experimental fluctuation$({\pm}3%)$ Central axis percentage depth doses and phantom-air ratios measured by LiF(Mg. Cu, Na, Si) TLD showed good agreement with the published values[Br. J. Radiology, Suppl. 17(1983)].

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.102-107
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• 1996

Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.