• Transactions of Materials Processing
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• v.22 no.5
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• pp.258-263
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• 2013

The deformation behavior of NIMONIC 80A was studied in the high temperature range of $900{\sim}1200^{\circ}C$ and for strain rates varying between 0.02 and $20s^{-1}$ via the hot compression test. Processing maps for hot working were constructed on the basis of the power dissipation efficiency using a dynamic material model. The results showed that the strength during hot compression increased with increasing strain rate and decreasing temperature. At low strains, the processing map of NIMONIC 80A did not reveal any instability domain regardless of the strain rate and temperature. However, at high strains, the processing map exhibited an instability domain at a low strain rate of $0.2s^{-1}$ and within a temperature range of $900{\sim}960^{\circ}C$. In the instability domain, the deformed microstructure exhibited shear bands and carbide precipitation while, in the safe domain, full recrystallization occurred.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.324-330
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• 2012

The microstructural changes of three pieces from an ancient iron pot were studied in order to identify present the material degradation due to repeated heating for one-thousand years. The microstructures of the pieces were divided into the areas of ferrite/graphite, ferrite/pearlite, and corroded oxidation. The area of ferrite/graphite was undergone by severe Galvanic corrosion, but that of ferrite/pearlite was not even during a thousand years' using. The shape of the graphites was coexisted with types of A, B, and C of as modern graphite classification. In the ferrite/pearlite area, abnormal acicula precipitates with a high aspect ratio of $0.2{\mu}m$ thickness and several hundreds ${\mu}m$ length were presented. They might be a kind of carbide in the ferrite matrix with its special precipitate plane.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.41-41
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• 1999

핵융합 장치의 플라즈마 운행동안 토카막 내벽에 도달하는 온도는 최저 $600^{\circ}C$ 이상이다. 또한 플라즈마 자체와 사용자(User)들의 시료로부터 방출되는 입자들에 의한 내벽 충격(damage)은 장기간의 안정적인 운행 및 연구에 심각한 영향을 미친다. 이러한 이유로 토카막 제작시 내벽 보호재의 선정은 매우 높은 비중을 차지한다. Graphite는 높은 융점과 가공의 용이성으로 토카막 내벽의 보호재로 선호되는 물질이다. 그러나 토카막 용기(vessel)에 사용되는 스테인레스 스틸(AISI 316LN)보다 약 50배 이상의 기체 방출율(outgassing rate)을 가진다. 그러므로 장착 이전의 초기 청정화 과정이 매우 중요하며, 특히 400m2의 약 2톤(2000kg)의 graphite가 사용되므로 대량 처리를 할 수 있는 방법의 선정도 함께 개발되어야 한다. 본 연구팀에서는 처음 10개 회사의 시제품을 검토한 후, 최종 2개 회사의 4가지 종류의 시료를 선정하였다. 선정된 시료는 Union Carbide의 ATJ와 Toyo Tanso의 IG-110, IG-43, Ig-430이다. 시료는 비절삭유(oil-free) 가공에 의해 80$\times$2$\times$3 (mm)의 크기로 제작되었고 에탄올과 메탄올 용액에서 초음파 세척되었다. 건조된 시료는 TDS(Thermal Desorption Spectroscopy) 장치에 장착되어 세 단계의 실험을 하였다. 처음은 승온(상온 ~100$0^{\circ}C$)에 의한 방출 기체의 성분 분석, 두 번째는 장기간 (2주) 대기 노출 후 주요 방출 기체의 온도에 따른 변화, 마지막으로는 특정 기체에서의 장기간 보관후, 주요 방출 기체의 온도에 따른 변화를 조사하였다. 다음 그림 1은 본 연구에서 사용된 TDS 장치의 개략도이고 그림 2는 TDS 장치에 장착 직 후와 대기 중 노출된 시료들의 온도증가에 따른 총 압력의 변화이다.

• Korean Journal of Metals and Materials
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• v.47 no.7
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• pp.406-415
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• 2009

A study was conducted on the effects of carbon, tungsten, and vanadium on the wear properties and surface roughness of four High Speed Steel (HSS) rolls manufactured by the centrifugal casting method. Hot-rolling simulation tests were carried out using a high-temperature wear tester capable of controlling speed, load, and temperature. HSS rolls contained a large amount (up to 25 vol.%) of carbides such as MC, $M_{2}C$, $M_{7}C_{3}$, and $M_{6}C$ carbides formed in the tempered martensite matrix. The matrix consisted mainly of lath tempered martensite when the carbon content in the matrix was small, and contained a considerable amount of plate tempered martensite when the carbon content increased. The high-temperature wear test results indicated that the wear properties and surface roughness of the rolls improved when the amount of hard MC carbides formed inside solidification cells increased. The rolls distribution was also homogeneous. The best wear properties and surface roughness were obtained from a roll where a large amount of MC carbides was homogeneously distributed in the lath tempered martensite matrix. The proper contents of carbon equivalent, tungsten equivalent, and vanadium were 2.0~2.3%, 9~10%, and 5~6%, respectively.

• Journal of Welding and Joining
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• v.22 no.2
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• pp.59-68
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• 2004

Plasma transferred arc welding (PTAW) has been taken into consideration for repairing Ni-based superalloy components used gas turbine blades. Various cracks has been generally reported to be found in the base metal heat affected zone(HAZ) along grain boundary. Thus, hot cracking susceptibility of Ni-based superalloys was evaluated according to heat treatments. Hot ductility test was conducted on specimens with solution treated at 112$0^{\circ}C$ for 2 hours and aging treated at 845$^{\circ}C$ for 24hours after solution treatment. The results of the hot ductility test appeared that solution treated specimens were the highest ductility recovery rate among three conditions. The loss of ductility at high temperature in Ni-based superalloy was mainly controlled by the degree of pain boundary wetting due to constitutional liquation of MC carbide precipitates. Meanwhile, the highest ductility recovery rate in solution-treated alloys seems to be lack of M23C6, which can be dissolved during heating and then result in the local enrichment of Cr in the vicinity of the grain boundary.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.555-565
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• 2023

Despite many advantages as structural materials, austenitic stainless steels (SSs) have been avoided in many next generation nuclear systems due to poor void swelling resistance. In this paper, we report the results of heavy ion irradiation to the recently developed advanced radiation resistant austenitic SS (ARES-6P) with nanosized NbC precipitates. Heavy ion irradiation was performed at high temperatures (500 ℃ and 575 ℃) to the damage level of ~200 displacement per atom (dpa). The measured void swelling of ARES-6P was 2-3%, which was considerably less compared to commercial 316 SS and comparable to ferritic martensitic steels. In addition, increment of hardness measured by nano-indentation was much smaller for ARES-6P compared to 316 SS. Though some nanosized NbC precipitates were dissociated under relatively high dose rate (~5.0 × 10^-4 dpa/s), sufficient number of NbC precipitates remained to act as sink sites for the point defects, resulting in such superior radiation resistance.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.