• Title/Summary/Keyword: $M_2C$ carbide

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Effects of Mo on the Microstructure and Hardness in High Chromium Cast Irons (Mo가 고크롬주철의 조직 및 경도에 미치는 영향)

  • Yu, Sung-Kon
    • Journal of Korea Foundry Society
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    • v.16 no.2
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    • pp.141-148
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    • 1996
  • In high chromium cast iron, the control of matrix microstructure as well as carbide structure is important to the performance as a wear resistant material. In this study, 3.0% C-24.0% Cr white cast irons with various molybdenum contents(residual, 1.0%, 3.0% and 5.0%) were solidified conventionally and unidirectionally for studying their effects on the microstructure and hardness. In the conventional casting, two sets of castings were poured from each melt. One set of the castings consisted of cylindrical bars of 10 and 20mm by 155mm long. The second set of the castings was a cylindrical bar of 30mm by 200mm long. On the other hand, a pep-set mold set on the Cu plate was employed to make the solidification unidirectionally. X-ray diffraction method was used to observe retained austenite and carbides in the high chromium cast iron. The morphology of eutectic $M_7C_3$ carbides changed from needle-like type to nodular type with the increase of Mo content. And, the presence of $M_2C$ carbides was identified in the sample where Mo was added over 3.0 %. Primary and eutectic carbides appeared as rod type and corngrain type, respectively in the unidirectionally solidified samples which were cut to parallel to the solidification direction. In the EDX analysis, Cr concentration was higher in the primary and eutectic $M_7C_3$ carbides, Mo in the $M_2C$ carbides, and Fe in the matrix.

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Room-temperature tensile strength and thermal shock behavior of spark plasma sintered W-K-TiC alloys

  • Shi, Ke;Huang, Bo;He, Bo;Xiao, Ye;Yang, Xiaoliang;Lian, Youyun;Liu, Xiang;Tang, Jun
    • Nuclear Engineering and Technology
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    • v.51 no.1
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    • pp.190-197
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    • 2019
  • W-K-TiC alloys with different titanium carbide concentrations (0.05, 0.1, 0.25, 0.5, 1, 2) wt.% were fabricated through Mechanical Alloying and Spark Plasma Sintering. The effects of the addition of nano-scaled TiC particles on the relative density, Vickers micro-hardness, microstructure, crystal information, thermal shock resistance, and tensile strength were investigated. It is revealed that the doped TiC nano-particles located at the grain boundaries. The relative density and Vickers micro-hardness of W-K-TiC alloys was enhanced with TiC addition and the highest Vickers micro-hardness is 731.55. As the TiC addition increased from 0.05 to 2 wt%, the room-temperature tensile strength raised from 141 to 353 MPa. The grain size of the W-K-TiC alloys decreased sharply from $2.56{\mu}m$ to 330 nm with the enhanced TiC doping. The resistance to thermal shock damage of W-K-TiC alloys was improved slightly with the increased TiC addition.

Physical Characteristics of 3C-SiC Thin-films Grown on Si(100) Wafer (Si(100) 기판 위에 성장돈 3C-SiC 박막의 물리적 특성)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.953-957
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    • 2002
  • Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; {CH$_{3}$$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

Microstructure and Polytype of in situ-Toughened Silicon Carbide

  • Young Wook Kim;Mamoru Mitomo;Hideki Hirotsuru
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.152-156
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    • 1996
  • Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.

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Simulation and analysis of DC characteristics in AlGaN/GaN HEMTs on sapphire, SiC and Si substrates (Sapphire SiC, Si 기판에 따른 AlGaN/GaN HEMT의 DC 전기적 특성의 시뮬레이션과 분석)

  • Kim, Su-Jin;Kim, Dong-Ho;Kim, Jae-Moo;Choi, Hong-Goo;Hahn, Cheol-Koo;Kim, Tae-Geun
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.272-278
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    • 2007
  • In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

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Microstructure and Mechanical Properties of Cr-Mo Steels for Nuclear Industry Applications

  • Kim, Sung-Ho;Ryu, Woo-Seong;Kuk, Il-Hiun
    • Nuclear Engineering and Technology
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    • v.31 no.6
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    • pp.561-571
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    • 1999
  • Microstructure and mechanical properties of five Cr-Mo steels for nuclear industry applications have been investigated. Transmission electron microscopy, energy dispersive spectrometer, differential scanning calorimeter, hardness, tensile, and impact test were used to evaluate the Cr and W effect on the microstructure and mechanical properties. Microstructures of Cr-Mo steels after tempering are classified into three types : bainitic 2.25Cr-lMo steel, martensitic Mod.9Cr-lMo, HT9M, and HT9W steels, and dual phase HT9 steel. The majority of the precipitates were found to be M$_{23}$C$_{6}$ carbides. As minor phases, fine needle-like V(C,N), spherical NbC, fine needle-like Cr-rich Cr$_2$N, and Cr-rich M$_{7}$C$_3$were also found. Addition of 2wt.% W in Cr-Mo steels retarded the formation of subgrain and dissolution of Cr$_2$N precipitates. Hardness and ultimate tensile strength increased with increasing Cr content. Though Cr content of HT9W steel was lower than that of HT9 steel, the hardness of HT9W was higher due to the higher W content. W added HT9W steel had the highest ultimate tensile strength above $600^{\circ}C$. But impact toughness of W added steel (HT9W) and high Cr steel (HT9) was low.w.w.

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A Surface Study of 304 and 316 Stainless Steel Oxidized between $300^{\circ}C$ and $500^{\circ}C$ ($300^{\circ}C$$500^{\circ}C$사이에서 산회된 304, 316 스테인리스강의 표면특성)

  • 김경록;이경구;강창석;최답천;이도재
    • Journal of the Korean institute of surface engineering
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    • v.32 no.1
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    • pp.43-48
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    • 1999
  • Oxidation behavior of 304 and 316 stainless steels was studied. After solution heat treatment, specimens were polished up to 1$mu \textrm{m}$ using $Al_2O_3$ powder and then subjected to oxidation between $300^{\circ}C$ and 50$0^{\circ}C$ in dry air. TEM and EDS were used for analyzing the components and structure of oxide film. TEM analysis of oxide film revealed that thin amorphous Fe oxide ($Fe_2O_3$) was formed on the top of surface while polycrystalline (Cr, $Fe_2O_3$ was formed below the amorphous Fe oxide layer. The specimens oxidized at $500^{\circ}C$ showed that 316 stainless steel had higher oxidation resistance than 304 stainless steel. These results suggest that Mo component of 316 stainless steel suppresses the formation of Cr carbide which may result in a local Cr depleted area.

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Dendrite Arm Spacing and Carbide Morphology with Thermal Gradient and Solidification Rate in Directionally Solidified Ni-Base Superalloy (일방향 초내열합금에서 응고속도 및 온도구배 따른 수지상간격 및 탄화물 형상 변화)

  • Son, S.D.;Kim, Y.H.;Choi, G.S.;Lee, J.H.;Seo, S.M.;Jo, C.Y.
    • Journal of Korea Foundry Society
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    • v.27 no.2
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    • pp.77-82
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    • 2007
  • The effects of thermal gradient and solidification rate on the dendrite arm spacing and carbide morphology were investigated in directionally solidified Ni-base superalloy, CM 247LC. Thermal gradient was controlled by changing the position of the cold chamber and the furnace set temperature. The interface morphology changed from the planar to dendritic as increasing solidification rate. It was found that the dendrite spacing decreased as increasing the thermal gradient as well as the solidification rate. Also, as increasing solidification rate, carbide morphology changed from blocky shape to script and spotty shapes.

Effects of SPS Mold on the Properties of Sintered and Simulated SiC-ZrB2 Composites

  • Lee, Jung-Hoon;Kim, In-Yong;Kang, Myeong-Kyun;Jeon, Jun-Soo;Lee, Seung-Hoon;Jeon, An-Gyun;Shin, Yong-Deok
    • Journal of Electrical Engineering and Technology
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    • v.8 no.6
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    • pp.1474-1480
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    • 2013
  • Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

Microstructure and Properties of HIPped P/M High Speed Steels (열간등압소결 된 고속도 공구강의 미세조직 및 기계적 특성)

  • Gang Li;Park, Woojin;S. Ahn
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 1997.04a
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    • pp.35-35
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    • 1997
  • High$\cdot$speed steels (HSS) with a combination of good wear resistance and toughness are finding new, non-cutting applications such as rolls and rollers. In this paper, the research interests are focused on the microstructural evolution of a SMo-6W series high speed steel during HIPping and the effect of HIPping process parameters on its microstructure and properties. HIPping process variables includes; temperature, pressure and hold time. The microstructures of the HIPped HSS were examined by SEM, OM and X-ray diffraction whereas the properties measured were the relative density, hardness, and bend strength at room temperature. In HIPped materials, MC and M6C were the major carbides formed in a matrix of martensite. The effect of powder size on the microstructure and mechanical properties of HIPped materials was insignificant. However, HIPping temperature and hold time strongly affected the carbide size and distribution. The results show that at proper HIPping temperature and pressure conditions, the final products approach the full density ( > 99% RD). The particle boundaries were completely eliminated without an eminent microstructural coarsening. The bend strength was about 2.3 Gpa, which is superior to cast HSS. At excessive HIPping temperatures, rapid carbide coarsening occurred, thus deteriorating the mechanical properties of the P/M steels.

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