• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4205-4209
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• 2011

The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ silicate was prepared by blending of $Li_2MnSiO_4$ and $Li_2FeSiO_4$ precursors with same molar ratio. The one of the silicates of $Li_2FeSiO_4$ is known as high capacitive up to ~330 mAh/g due to 2 mole electron exchange, and the other of $Li_2FeSiO_4$ has identical structure with $Li_2MnSiO_4$ and shows stable cycle with less capacity of ~170 mAh/g. The major drawback of silicate family is low electronic conductivity (3 orders of magnitude lower than $LiFePO_4$). To overcome this disadvantage, carbon composite of the silicate compound was prepared by sucrose mixing with silicate precursors and heat-treated in reducing atmosphere. The crystal structure and physical morphology of $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ was investigated by X-ray diffraction, scanning electron microscopy, and high resolution transmission electron microscopy. The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$/C nanocomposite has a maximum discharge capacity of 200 mAh/g, and 63% of its discharge capacity is retained after the tenth cycles. We have realized that more than 1 mole of electrons are exchanged in $Li_2Mn_{0.5}Fe_{0.5}SiO_4$. We have observed that $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ is unstable structure upon first delithiation with structural collapse. High temperature cell performance result shows high capacity of discharge capacity (244 mAh/g) but it had poor capacity retention (50%) due to the accelerated structural degradation and related reaction.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.158-160
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• 2001

본 연구는 레이저 처리기술에 의한 Li$_2$O-A1$_2$O$_3$-SiO$_2$계 유리의 미세가공과 레이저에 의한 유리의 광활성반응에 관한 것으로서, 1064nm와 355nm의 파장을 갖는 Nd:YAG laser를 유리에 조사하여 유리의 파괴특성 및 광학적변화를 관찰하였다. 1064nm 레이저에 의한 유리의 파괴 부분은 광학현미경과 주사전자현미경(SEM)으로서 파괴특성을 평가하였으며, 355nm 레이저에 의한 유리의 변화는 흡수대역을 측정함으로 그 광학적 특성을 나타내었다. 이와 같은 레이저에 의한 가공은 유리내부의 3차원적인 미세구조물 형성이나, internal waveguide, 또는 광 흡수대역의 변화에 따른 광기록방법으로 응용될 것으로 예상된다.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.65-73
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• 1994

Effects of deposition parameter on the ionic conductivity and structural change of the Lithium borosili-cate solid electrolyte films, prepared by rf sputtering using 7$LI_2O-3B_2O_3-1SiO_2$ single phase target and also a mosaic target enriched with $LI_2O$, were analyzed by measuring AC impedance and IR absorption spectra for the films. Thed solid electrolyte film deposited from the single phase target exhibited very low ionic conductivi-ty of $10^{-10}{\Omega}^{-1}cm{-1}$ at room temperature, a result of low $Li^+$ ion content(7.52 at%) in the film. The $Li^+$ con-ductivity for the films deposited from the mosaic target, however, significantly increased to $10^{-7}{\Omega}^{-1}cm{-1}$ due to both an increased $Li^+$content (14.75 at %) and a structural change of the films. The increased ionic conduc-tivity of the film appears to be associated with an easiness of ionic mobility by structural change of glassy film from a some close packed network structure to a open one. These structural changes of film were found to be closely related to the increase in the peak intensity at~$960cm^{-1}$ of IR absorption spectra for the glassy films. With increasing either argon pressure from 3 to 21 mtorr or rf power from 2 to 3 W/$cm^2$, the $Li^+$ conduc-tivity for the films significantly increased to an order of $10^{-6}{\Omega}^{-1}cm{-1}$ due to an increase in openness of film structure, as confirmed by both an increase in the IR absorption peak intensity at ~$960cm^{-1}$ and a resultant reduction of activation energy for mobility of $Li^+$ ion.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.284-288
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• 1997

FT-IR and FT-Raman spectra were measured for 15Li$_{2}$O.3Al$_{2}$O$_{3}$.78SiO$_{2}$. 4K$_{2}$O glass system after UV irradiations. Optimum UV irradiation time of Li$_{2}$O.SiO$_{2}$ crystalline phase was 60 seconds and crystalline phase of Li$_{2}$O.SiO$_{2}$ was leached out on 5% HF. 977 cm$^{1}$ band of FT-Raman spectra can be attributed to two-non bridging oxygen in unit cell for 1 hour and optimum crystallization was confirmed for 3 hrs, 630.deg. C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.25-28
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• 1999

Metal ferroelectric semiconductor Field Effect- Transistors(MFSFET) with various gate electrodes, that are aluminum, platinum and poly -Si, using LiNbO$_3$/Si(100) structures were fabricated and the properties of the FETs have been discussed. The drain current of the state of FET with Pt electrode was more than 3 orders of magnitude larger than the state current at the same gate voltage of 1.5 V, 7.rich means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10$^3$s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.50-58
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• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.269-273
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• 1990

The proton conserving effect of diffusion with self-aligned SiO2-cladding is investigated by infrared transmission spectra. Based on the proton conserving effect, proton-diffused channel waveguides with self-aligned SiO2-cladding substrates. And an electro-optic cutoff modulator with self aligned electrode that utilizes a single-mode proton-diffused channel waveguide in a Y-cut XX-propagating LiNbO3 substrate is fabricated. Over 20 dB extinction has been achieved with applied voltage of 15V.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.541-551
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• 1988

The purpose of this investigation was to prepare multicomponent monolithic Li-Al-Si gels of composition(mol%) 16.67 Li2O-16.67 Al2O3-66.67 SiO2 and to convert the gels to monolithic glass-ceramic at low temperature without melting. The hydrolysis, DTA, TGA, TMA, SEM, pore distribution, density and the activation energy for crystallization of the glass-ceramic formation with rawmaterials of which tetraethl orhosilicate of networkforming cation(Si) is partially hydrolyzed, aluminum isoproxide and lithium methoxide prepared by Li-metal react with methanol were studied. The results were as follows : 1) Monolithic gels which were added with additional water, resulting in a total water content 2.5 to 3.0 times the stoichiometric amount required to fully hydrolyze the alkoxides. 2) Specimens were dried to form crylinders 60mm in length and 40mm in diameter in about 800 hrs at 5$0^{\circ}C$. 3) $\beta$-eucryptite crystals and $\beta$-spodumene crystals were detected in samples heated above 75$0^{\circ}C$. 4) Within the temperature and range of 25-50$0^{\circ}C$ and 1,00$0^{\circ}C$ the thermal expansion coefficient for crystallized samples were shown as 2.6-5.7$\times$10-7/$^{\circ}C$ and 7.4-12.5$\times$10-7/$^{\circ}C$, respectively. 5) The activation energy for the crystal growth was 11.01kcal/mol at 794$^{\circ}C$ to 85$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.3-10
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• 1985

In the study the characteristics change of crystallized $Li_2O$.$Al_2O_3$.$SiO_2$ glass-ceramics when varying RO ratio and increasing Al2O3 were investigated to produce a glass-ceramics with high mechanical strength and low thermal expansion. Parent glass was obtained by melting at 1,350~1,40$0^{\circ}C$ for 3 hours and annealing at 45$0^{\circ}C$ and the various physical characteristics were measured. Results were as follows; 1. When ZnO was replaced by MgO thermal expansion coefficient was lowered when increasing ZnO content. 2. Major crystal phase was $\beta$-spodumene the crystal growth mophology was the three dimensional sphere and the activation energy for crystallization was 54.6 Kcal/mol. 3. Parent glass heat-treated at 95$0^{\circ}C$ for 10 hours had ; a) thermal expansion coeff. of $23.2{\times}10^{-7}$/$^{\circ}C$ b)whiteness of 76 c) microhardness of 1,089kg/$mm^2$