• Title/Summary/Keyword: $La_{1/3}TaO_3$ single crystal

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Crystal growth and dielectric properties of $La_{1/3}MO_3$ (M=Nb, Ta) by infrared floating zone method (적외선 용융대역법에 의한 $La_{1/3}MO_3$ (M=Nb, Ta) 단결정 성장 및 유전 특성)

  • Mitisuru Itoh
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.3
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    • pp.233-239
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    • 1995
  • $La_{1/3}NbO_3$ and $La_{1/3}TaO_3$ large single crystal was prepared by the infrared floating zone method and their crystal structure and dielectric properties were investigated from the viewpoint of A - site vacancy. In $La_{1/3}TaO_3$ crystal, the crystal symmetry and approximate lattice constants was tetragonal and a $\approx$ 0.397, b $\approx$ 0.397 and c $\approx$ 0.775 from the nonextinction and the reciprocal lattice point length seen on Weissenberg and Precession photographs. The jump of some $2/3La^{3+}$ ions leads to increase the moving paths due to the generation of new vacancies at middle empty sites and thus this result is confirmed to provoke the dielectric anomaly.

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Dielectric and conductivity properties of defect double Perovskite La1/3TaO3 single crystal (결함 이중 Perovskite La1/3TaO3 단결정의 유전 및 전도특성)

  • Sohn, Jeong-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.6
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    • pp.215-219
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    • 2020
  • After the specimen of A-site defect double Perovskite La1/3TaO3 single crystal was manufactured, the dielectric properties have been studied between the temperature range of 10 and 800 K. Under 500 K, a paraelectric behavior has been shown, and above 550 K, a dielectric anomaly and a thermal history of dielectric constant has been shown. An activation energy by measurement of ac-conductivity has been the largest with 1.83 eV in the areas below 560 K, 0.35 eV in the areas of 560~690 K, and 0.28 eV in the areas of high temperature above 690 K. From these results, it is assumed that in the areas below 500 K, La3+-ion and vacancy-site are arranged in disorder to maintain a paraelectric phase. And in the areas near 560 K with the highest activation energy, a dielectric anomaly is attributes to rearrangement of La3+-ion due to conduction to vacancy-site or jumping.

Crystal chemistry and growth of$La_3Ga_5SiO_{14}$ for the applications of filter and resonator (필터와 레죠네이터 응용을 위한 $La_3Ga_5SiO_{14}$ 의 결정화학 및 성장)

  • Jung, Il-Hyoung;Joo, Kyung;Shim, Kwang-Bo;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.74-79
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    • 1999
  • Langasite($La_3Ga_5SiO_14$) is a new piezoelectric material which is similar to quartz, LN($LiNbO_3$) and LT($LiTaO_3$) in its acoustic behavior. In this study, pure Langasite and Lagnasite family groups were synthesized by the solid state reactions in air. The diffusion species for synthesis were investigated and the sintered body was studied on dielectric property to comparison of characteristics. Also, Langasite single crystals were grown by self-designed Czochralski system and characterized.

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Crystal Structure and Piezoelectric Properties of Four Component Langasite A3B Ga3Si2O14 (A = Ca or Sr, B = Ta or Nb)

  • Ohsato, Hitoshi;Iwataki, Tsuyoshi;Morikoshi, Hiroki
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.171-176
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    • 2012
  • As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

A promising new piezoelectric material -Langasite and its related compounds-

  • Kawanaka, Hiroyuki;Takeda, Hiroaki;Shimamura, Kiyoshi;Onozato, Norio;Fukuda, Tsuguo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.145-145
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    • 1997
  • Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.

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