• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1491-1493
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• 2002

The 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction patterns, major phases of the 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were coexisted. Also the secondary phase of Mg$Ti_2O_5$, Ba$Mg_6Ti_6O_{19}$ and the unreacted $TiO_2$ phase were existed. In the case of 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics sintered $1350^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 33.7, 54,900GHz, -12.5ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.243-244
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• 2009

The $TiO_2$ nanofiber doped $TiO_2$ electrode area applied to dye-sensitized solar cells(DSSCs). The mixtures of $TiO_2$ nanofiber to $TiO_2$ photoelectrode has larger surface area than $TiO_2$ photoelectrode. In this research added 2.5, 5 and 10wt% $TiO_2$ nanofibers and the optimum condition of 5 wt% $TiO_2$ nanofiber's high surface area contributing the improvement of short-circuit photocurrent. The open-circuit voltage was 0.7V and solar energy conversion efficiency was 5.4%.

• Bulletin of the Korean Chemical Society
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• v.21 no.9
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• pp.913-918
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• 2000

Vanadium oxide catalyst supported on TiO2-ZrO2 has been prepared by adding Ti(OH)4-Zr(OH)4 powder to an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The char-acterization ofthe prepared catalysts was performed using solid-state 51V NMR and FTIR.In thecase ofcalci-nation temperature at 773 K, vanadium oxide was in a highly dispersed state for the samples containing low loading V2O5 below 25 wt %, but for samplescontaining high loading V2O5 equal to or above 25 wt %, vana-dium oxidewas well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2.The ZrV2O7 compound was formed through the reactionof V2O5 and ZrO2 at 773-973 K, where-as the V3Ti6O17 compound was formedthrough the reaction of V2O5 and TiO2 at 973-1073 K. The V3Ti6O17 compound decomposed to V2O5 and TiO2 at 1173 K, which were confirmed by FTIR and 51V NMR.

• Journal of the Korean Chemical Society
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• v.9 no.2
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• pp.71-74
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• 1965

Reduction of Ti(Ⅳ)-oxalate complex on dropping mercury electrode has been studied as a function of oxalate concentration and of pH varied with HCl. Assuming there are equilibrium $TiO(C_2O_4)_2= \;+\;2H^+\;=\;Ti^{+4}\;+\;2C_2O_4\;=\;+\;H_2O,\;K_4$ in addition to $TiO(C_2O_4)_2\;^=\;=\;TiO^{++}\;+\;2C_2O_4=\;K_2\;Ti(C_2O_4)_2\;^-\;=\;Ti^{+3}\;+\;2C_2O_4=\;K_3$ in the system cathodic wave has been well explained for that pH is higher than 0.5. The equilibrium constants $K_2,\;K_3$ and $K_4$ have been to be $2{\times}10^{-12},\;5{\times}10^{-13}$ and $10^{-11}$, respectively. The reduction of Ti(Ⅳ)-oxalate system is $Ti^{+4}\;+\;e\;{\to}\;Ti^{+3}$ in the concentration of hydrochloric acid, higher than 3M.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.175-180
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• 2011

In this study, the $TiO_{2}/V_{2}O_{5}$ hybrid semiconductors were prepared by mixing $TiO_{2}$ and $V_{2}O_{5}$, and a subsequent smash process to reduce the recombination of electron and improve the efficiency of solar cells. Dye-sensitized solar cells were constructed using the resultant hybrid semiconductor, and their electrochemical properties were also investigated. The photocurrent-voltage curve obtained with the cells indicated a significant increase in the efficiency from 2.9 to 5.7% by the factor of 2 compared to the result obtained only with $TiO_{2}$. It is believed that the introduction of $V_{2}O_{5}$ effectively transport electrons in the $TiO_{2}$ conduction band to FTO glass and suppress recombination with the dye and/or the electrolyte, thus yielding an efficient performance of the dye sensitized solar cell. The impedance values also indicated a decrease of resistance in the interface of $TiO_{2}$/dye/electrolyte supporting the constructive contributions of the smashed $TiO_{2}/V_{2}O_{5}$ hybrid semiconductors for the efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.80-84
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• 2015

We investigated the dielectric relaxation properties $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics with CuO addition. With increasing CuO addition, the lattice parameter was increased by substitution of small amount $Cu^{2+}$ ion in B-site of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics. Also the grain size and the maximum dielectric constant of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was decreased with increasing amounts of CuO addition. Moreover, the diffused phase transition properties (${\gamma}$) of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was increased by compositional fluctuation with increasing of CuO amount, changed from 1.45 at 1 wt% CuO addition to 1.94 at 7 wt% CuO addition.

• Applied Microscopy
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• v.29 no.1
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• pp.95-103
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• 1999

Microstructural observations on the pseudo-brookite $MgTi_2O_5$ and the similar type of $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$, however, not in $MgTi_2O_5$. The electron diffraction patterns of sublattice in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ are quite similar to those of pseudo-brookite $MgTi_2O_5$. but the complicated superlattice reflections are present in the diffraction patterns. Four types of modulations have been found. The periodicities for the modulated structure are found to be 3.63 nm, 0.79 nm and 0.64 nm along [220] direction, and 0.81 nm along [420] direction. The phase transition from the modulated structure to the unmodulated one was also observed in situ due to the electron beam irradiation reversibly. Further damage by the electron beam made the crystal to be fragmented into many small crystals with the formation of the voids at the kinks in ledged structure of the surface. The anisotropic arrangements of In and O atoms in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ might cause the compound to be unstable under the electron beam.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.163-168
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• 2010

Effects of compositions on the microwave dielectric properties of the MgO-$TiO_2$ system were investigated as a function of the molar ratio of MgO to $TiO_2$ ($0.9{\leq}MgO/TiO_2\;(x){\leq}1.2$). With the compositional changes, secondary phases of $MgTi_2O_5$ and $Mg_2TiO_4$ were also detected along with $MgTiO_3$. Microwave dielectric properties of the specimens were dependent on the types of phases developed in the sintered specimens. A single phase of $MgTiO_3$ showed a dielectric constant (K) of 18.2, a quality factor (Qf) of 198,000 GHz, and a temperature coefficient of resonant frequency (TCF) of $-51\;ppm/^{\circ}C$. However, the dielectric properties of the specimens with a secondary phase of $MgTi_2O_5$ (K=19.9, Qf=48,000 GHz) and/or $Mg_2TiO_4$ (K=15.6, Qf=56,000 GHz) were worsened. Dependence of the microwave dielectric properties on the secondary phase of the MgO-$TiO_2$ system was also discussed in terms of dielectric mixing rules.